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Interface trap evaluation of Pd/Al2O3/GaN metal oxide semiconductor capacitors and the influence of near-interface hydrogen

Applied physics letters, 2013-11, Vol.103 (20)

2013

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Comprehensive radiocarbon analysis of benzene polycarboxylic acids (BPCAs) derived from pyrogenic carbon in environmental samples

Radiocarbon, 2017-08, Vol.59 (4), p.1103-1116

2017

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Diverse Soil Carbon Dynamics Expressed at the Molecular Level

Geophysical research letters, 2017-12, Vol.44 (23), p.11,840-11,850

2017

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Morphological instability of misfit-strained core-shell nanowires

Physical review. B, Condensed matter and materials physics, 2008-06, Vol.77 (23), Article 235302

2008

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Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices

ACS applied materials & interfaces, 2016-08, Vol.8 (32), p.21089-21094

2016

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Conductance and capacitance of bilayer protective oxides for silicon water splitting anodes

Energy & environmental science, 2016-02, Vol.9 (2), p.504-516

2016

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Series resistance and gate leakage correction for improved border trap analysis of Al2O3/InGaAs gate stacks

Journal of applied physics, 2017-09, Vol.122 (9)

2017

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Investigation of stress induced interface states in Al2O3/InGaAs metal-oxide-semiconductor capacitors

Journal of applied physics, 2017-05, Vol.121 (17)

2017

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Size effects in vapor-solid-solid Ge nanowire growth with a Ni-based catalyst

Journal of applied physics, 2012-09, Vol.112 (5)

2012

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Fermi level pinning in metal/Al2O3/InGaAs gate stack after post metallization annealing

Journal of applied physics, 2015-08, Vol.118 (5)

2015

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The effect of post oxide deposition annealing on the effective work function in metal/Al2O3/InGaAs gate stack

Applied physics letters, 2014-05, Vol.104 (20)

2014

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Directed synthesis of germanium oxide nanowires by vapor-liquid-solid oxidation

Nanotechnology, 2012-09, Vol.23 (38), p.385603-385603

2012

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Effect and extraction of series resistance in Al2O3-InGaAs MOS with bulk-oxide trap

Electronics letters, 2013-03, Vol.49 (7), p.492-493

2013

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4 Bits/cell Hybrid 1F1R for High Density Embedded Non-Volatile Memory and its Application for Compute in Memory

2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2022, p.244-245

2022

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IEEE_Xplore

A gas-accepting ion source for Accelerator Mass Spectrometry: Progress and applications

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2013-01, Vol.294, p.296-299

2013

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Semiconductor nanowires: to grow or not to grow?

Materials today. Nano, 2020-03, Vol.9, p.100058, Article 100058

2020

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Spinodal decomposition in amorphous metal–silicate thin films: Phase diagram analysis and interface effects on kinetics

Journal of applied physics, 2002-11, Vol.92 (9), p.5094-5102

2002

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Preparation of biaxially aligned cubic zirconia films on pyrex glass substrates using ion-beam assisted deposition

Journal of applied physics, 1993-07, Vol.74 (2), p.1027-1034

1993

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Misfit dislocation dissociation and Lomer formation in low mismatch SiGe/Si heterostructures

Journal of materials research, 2005-02, Vol.20 (2), p.447-455

2005

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Epitaxial nucleation and growth of chemically derived Ba2YCu3O7− x thin films on (001) SrTiO3

Journal of applied physics, 1995-05, Vol.77 (10), p.5263-5272

1995

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Progress with a gas-accepting ion source for Accelerator Mass Spectrometry

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2011-12, Vol.269 (24), p.3192-3195

2011

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Orientation selection in thin platinum films on (001) MgO

Journal of applied physics, 1995-06, Vol.77 (12), p.6201-6204

1995

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Admittance and subthreshold characteristics of atomic-layer-deposition Al2O3 on In0.53Ga0.47As in surface and buried channel flatband metal-oxide-semiconductor field effect transistors

Journal of applied physics, 2012-05, Vol.111 (10)

2012

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Influence of Ge concentration and compressive biaxial stress on interdiffusion in Si-rich SiGe alloy heterostructures

Journal of applied physics, 2005-01, Vol.97 (1)

2005

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Epitaxy of Pt thin films on (001) MgO—I. Interface energetics and misfit accommodation

Acta materialia, 1997-02, Vol.45 (2), p.869-878

1997

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Interface trap evaluation of Pd/Al2O3/GaN metal oxide semiconductor capacitors and the influence of near-interface hydrogen

Comprehensive radiocarbon analysis of benzene polycarboxylic acids (BPCAs) derived from pyrogenic carbon in environmental samples

Diverse Soil Carbon Dynamics Expressed at the Molecular Level

Morphological instability of misfit-strained core-shell nanowires

Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices

Conductance and capacitance of bilayer protective oxides for silicon water splitting anodes

Series resistance and gate leakage correction for improved border trap analysis of Al2O3/InGaAs gate stacks

Investigation of stress induced interface states in Al2O3/InGaAs metal-oxide-semiconductor capacitors

Size effects in vapor-solid-solid Ge nanowire growth with a Ni-based catalyst

Fermi level pinning in metal/Al2O3/InGaAs gate stack after post metallization annealing

The effect of post oxide deposition annealing on the effective work function in metal/Al2O3/InGaAs gate stack

Directed synthesis of germanium oxide nanowires by vapor-liquid-solid oxidation

Effect and extraction of series resistance in Al2O3-InGaAs MOS with bulk-oxide trap

4 Bits/cell Hybrid 1F1R for High Density Embedded Non-Volatile Memory and its Application for Compute in Memory

A gas-accepting ion source for Accelerator Mass Spectrometry: Progress and applications

Semiconductor nanowires: to grow or not to grow?

Spinodal decomposition in amorphous metal–silicate thin films: Phase diagram analysis and interface effects on kinetics

Preparation of biaxially aligned cubic zirconia films on pyrex glass substrates using ion-beam assisted deposition

Misfit dislocation dissociation and Lomer formation in low mismatch SiGe/Si heterostructures

Epitaxial nucleation and growth of chemically derived Ba2YCu3O7− x thin films on (001) SrTiO3

Progress with a gas-accepting ion source for Accelerator Mass Spectrometry

Orientation selection in thin platinum films on (001) MgO

Admittance and subthreshold characteristics of atomic-layer-deposition Al2O3 on In0.53Ga0.47As in surface and buried channel flatband metal-oxide-semiconductor field effect transistors

Influence of Ge concentration and compressive biaxial stress on interdiffusion in Si-rich SiGe alloy heterostructures

Epitaxy of Pt thin films on (001) MgO—I. Interface energetics and misfit accommodation

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