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Room-temperature operation of lattice-matched InP/Ga0.47In0.53As/InP double-heterostructure lasers grown by MBE

Applied physics letters, 1978-07, Vol.33 (1), p.44-47

1978

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PYROELECTRICITY AND OPTICAL SECOND HARMONIC GENERATION IN POLYVINYLIDENE FLUORIDE FILMS

Applied physics letters, 1971-03, Vol.18 (5), p.203-205

1971

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Ultrasonic Amplification and Non-Ohmic Behavior in CdS and ZnO

Journal of applied physics, 1963-05, Vol.34 (5), p.1548-1553

McFee, J. H.

1963

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An uncompensated silicon bipolar junction transistor fabricated using molecular beam epitaxy

IEEE electron device letters, 1981-11, Vol.2 (11), p.293-295

1981

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Pyroelectric Properties of Polyvinylidene Flouride and Its Use for Infrared Detection

Journal of applied physics, 1971-12, Vol.42 (13), p.5219-5222

1971

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A technique for rapidly alternating boron and arsenic doping in ion-implanted silicon molecular beam epitaxy

Applied physics letters, 1982-02, Vol.40 (3), p.239-241

1982

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Acoustoelectric Current Distribution and Current Saturation in CdS

Journal of applied physics, 1966-06, Vol.37 (7), p.2754-2763

1966

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Pyroelectric and nonlinear optical properties of poled polyvinylidene fluoride films

Ferroelectrics, 1972-02, Vol.3 (1), p.305-313

1972

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Linear and nonlinear optical properties of some ternary selenides

IEEE journal of quantum electronics, 1972-12, Vol.8 (12), p.900-908

1972

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Hydrostatic and Uniaxial Pressure Generation using Teflon Cell Container in Conventional Piston‐Cylinder Device

Review of scientific instruments, 1967-01, Vol.38 (1), p.44-49

1967

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Transient Approach to Current Saturation in Photoconductive CdS

Journal of applied physics, 1967-03, Vol.38 (4), p.1721-1729

1967

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Linear and nonlinear optical properties of AgGaS2, CuGaS2, and CuInS2, and theory of the wedge technique for the measurement of nonlinear coefficients

IEEE journal of quantum electronics, 1971-01, Vol.7 (12), p.563-573

1971

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Linear and nonlinear optical properties of LiInS2

Journal of applied physics, 1973-06, Vol.44 (6), p.2809-2812

1973

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Possible Application of Molecular Beam Techniques to the Measurement of Surface Temperatures

Review of scientific instruments, 1960-09, Vol.31 (9), p.1013-1014

1960

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Cyanide coverage on silver in conjunction with surface enhanced raman scattering

Chemical physics letters, 1979-12, Vol.68 (2-3), p.412-415

1979

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OPTICAL SECOND-HARMONIC GENERATION PRODUCED BY INTERACTION OF LASER BEAMS AND DRIFTING CARRIERS IN InAs

Applied physics letters, 1967-01, Vol.11 (7), p.228-230

McFee, J. H.

1967

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IIIB-5 a technique for rapidly alternating boron and arsenic doping in ion-implanted silicon molecular beam epitaxy

IEEE transactions on electron devices, 1981-10, Vol.28 (10), p.1228-1229

1981

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Ultrasonic Amplification in CdS

Physical review letters, 1961-01, Vol.7 (6), p.237-239

1961

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The current status of the preparation of single crystals, bicrystals, and epitaxial layers of p-InP and of polycrystalline p-InP films for photovoltaic applications

Journal of crystal growth, 1977-07, Vol.39 (1), p.137-150

1977

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CW HIGH-POWER CO2–N2–He LASER

Applied physics letters, 1965-12, Vol.7 (11), p.290-292

1965

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Nonelectronic Ultrasonic Attenuation in CdS

Journal of applied physics, 1968-01, Vol.39 (9), p.4471-4472

1968

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Nonlinear optical properties of CdHg(SCN) 4 and ZnHg(SCN) 4

Materials research bulletin, 1970-01, Vol.5 (11), p.913-917

1970

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REDETERMINATION OF THE NONLINEAR OPTICAL COEFFICIENTS OF Te AND GaAs BY COMPARISON WITH Ag3SbS3

Applied physics letters, 1970-01, Vol.17 (2), p.57-59

1970

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High-output room-temperature pulsed operation for broad contact InP/In0.53Ga0.47As/InP lasers grown by molecular beam epitaxy

Journal of applied physics, 1983-05, Vol.54 (5), p.2177-2182

1983

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A UHV‐compatible round wafer heater for silicon molecular beam epitaxy

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1983-04, Vol.1 (2), p.497-500

1983

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Room-temperature operation of lattice-matched InP/Ga0.47In0.53As/InP double-heterostructure lasers grown by MBE

PYROELECTRICITY AND OPTICAL SECOND HARMONIC GENERATION IN POLYVINYLIDENE FLUORIDE FILMS

Ultrasonic Amplification and Non-Ohmic Behavior in CdS and ZnO

An uncompensated silicon bipolar junction transistor fabricated using molecular beam epitaxy

Pyroelectric Properties of Polyvinylidene Flouride and Its Use for Infrared Detection

A technique for rapidly alternating boron and arsenic doping in ion-implanted silicon molecular beam epitaxy

Acoustoelectric Current Distribution and Current Saturation in CdS

Pyroelectric and nonlinear optical properties of poled polyvinylidene fluoride films

Linear and nonlinear optical properties of some ternary selenides

Hydrostatic and Uniaxial Pressure Generation using Teflon Cell Container in Conventional Piston‐Cylinder Device

Transient Approach to Current Saturation in Photoconductive CdS

Linear and nonlinear optical properties of AgGaS2, CuGaS2, and CuInS2, and theory of the wedge technique for the measurement of nonlinear coefficients

Linear and nonlinear optical properties of LiInS2

Possible Application of Molecular Beam Techniques to the Measurement of Surface Temperatures

Cyanide coverage on silver in conjunction with surface enhanced raman scattering

OPTICAL SECOND-HARMONIC GENERATION PRODUCED BY INTERACTION OF LASER BEAMS AND DRIFTING CARRIERS IN InAs

IIIB-5 a technique for rapidly alternating boron and arsenic doping in ion-implanted silicon molecular beam epitaxy

Ultrasonic Amplification in CdS

The current status of the preparation of single crystals, bicrystals, and epitaxial layers of p-InP and of polycrystalline p-InP films for photovoltaic applications

CW HIGH-POWER CO2–N2–He LASER

Nonelectronic Ultrasonic Attenuation in CdS

Nonlinear optical properties of CdHg(SCN) 4 and ZnHg(SCN) 4

REDETERMINATION OF THE NONLINEAR OPTICAL COEFFICIENTS OF Te AND GaAs BY COMPARISON WITH Ag3SbS3

High-output room-temperature pulsed operation for broad contact InP/In0.53Ga0.47As/InP lasers grown by molecular beam epitaxy

A UHV‐compatible round wafer heater for silicon molecular beam epitaxy

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