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Epitaxial Growth and Properties of GaAs on Magnesium Aluminate Spinel

Journal of the Electrochemical Society, 1974-01, Vol.121 (4), p.571

1974

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Facilitating a trainee collaborative study

Journal of the Royal College of General Practitioners, 1989-10, Vol.39 (327), p.423

1989

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Dislocations in silicon layers grown on silicon-ribbon substrates

Journal of applied physics, 1977-01, Vol.48 (8), p.3616-3617

1977

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Lang Topographic Studies of III-V Heteroepitaxial Films Grown on Sapphire and Spinel

Journal of applied physics, 1972-04, Vol.43 (4), p.1724-1732

1972

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Epitaxial growth and piezoelectric properties of A1N, GaN, and GaAs on sapphire or spinel

Journal of electronic materials, 1973-05, Vol.2 (2), p.359-372

1973

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The analytical ion accelerator: RBS instrumentation from a surface analyst's perspective

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1986-04, Vol.15 (1), p.707-711

1986

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Etch pits and dislocation in {1̄012} Czochralski sapphire wafers

Journal of applied physics, 1978-01, Vol.49 (12), p.6171-6172

1978

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Effect of substrate preparation on the smoothness of liquid phase epitaxial (AlGa)As on GaP

Journal of crystal growth, 1974-01, Vol.23 (3), p.233-236

1974

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Si(111) 7×7 surface structure

Journal of vacuum science & technology, 1977-07, Vol.14 (4), p.878-882

1977

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Epitaxial silicon solar cells on “ribbon” substrates

Journal of crystal growth, 1977-07, Vol.39 (1), p.23-44

1977

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Evidence for the role of certain metallurgical flaws in accelerating electroluminescent diode degradation

Metallurgical transactions, 1970-03, Vol.1 (3), p.635-638

1970

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Comparison of Liquid-Encapsulated and Solution-Grown Substrates for Efficient GaP Diodes

Journal of applied physics, 1969-01, Vol.40 (12), p.4984-4988

1969

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Epitaxial silicon p-n junctions on polycrystalline ``ribbon'' substrates

Applied physics letters, 1974-01, Vol.25 (4), p.197-199

1974

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Effect of Substrate Imperfections on GaAs Injection Lasers Prepared by Liquid-Phase Epitaxy

Journal of applied physics, 1969-01, Vol.40 (9), p.3587-3597

1969

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Atomic Structure of the Si(111) 7×7 Surface

Physical review letters, 1977-06, Vol.38 (24), p.1408-1411

1977

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Etch pits and dislocation in brace 1012 brace Czochralski sapphire wafers

Journal of applied physics, 1978-01, Vol.49 (12), p.6171-6172

1978

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Stephanostomum casum (Linton), a Trematode Possessing a Uroproct

Transactions of the American Microscopical Society, 1934-04, Vol.53 (2), p.172

McFarlane, S. H.

1934

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Epitaxial growth and characterization of GaP on insulating substrates

Journal of crystal growth, 1972-05, Vol.13-14, p.262-267

1972

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Crystal growth and defect characterization of heteroepitaxial III–V semiconductor films

Thin solid films, 1976, Vol.31 (1), p.3-23

1976

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Atomic Structure of the Si(111) 7 x 7 Surface

Physical review letters, 1977-06, Vol.38 (24), p.1408-1411

1977

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Atomic structure of the Si/111/ 7 x 7 surface

Physical review letters, 1977-06, Vol.38, p.1408-1411

1977

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Growth and characterization of large stoichiometric magnesium aluminate spinel single crystals

Journal of crystal growth, 1968, Vol.3, p.485-489

1968

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Dislocations in Si Layers Grown on Si-Ribbon Substrates

Journal of applied physics, 1977-08, Vol.48 (8), p.3616-3617

1977

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Epitaxial Si Solar Cells on 'Ribbon' Substrates

Journal of crystal growth, 1977-07, Vol.39 (1), p.23-44

1977

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Formation of Dislocation Networks in Gallium Single Crystals

Journal of applied physics, 1967-01, Vol.38 (5), p.2024-2029

1967

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Epitaxial Growth and Properties of GaAs on Magnesium Aluminate Spinel

Facilitating a trainee collaborative study

Dislocations in silicon layers grown on silicon-ribbon substrates

Lang Topographic Studies of III-V Heteroepitaxial Films Grown on Sapphire and Spinel

Epitaxial growth and piezoelectric properties of A1N, GaN, and GaAs on sapphire or spinel

The analytical ion accelerator: RBS instrumentation from a surface analyst's perspective

Etch pits and dislocation in {1̄012} Czochralski sapphire wafers

Effect of substrate preparation on the smoothness of liquid phase epitaxial (AlGa)As on GaP

Si(111) 7×7 surface structure

Epitaxial silicon solar cells on “ribbon” substrates

Evidence for the role of certain metallurgical flaws in accelerating electroluminescent diode degradation

Comparison of Liquid-Encapsulated and Solution-Grown Substrates for Efficient GaP Diodes

Epitaxial silicon p-n junctions on polycrystalline ``ribbon'' substrates

Effect of Substrate Imperfections on GaAs Injection Lasers Prepared by Liquid-Phase Epitaxy

Atomic Structure of the Si(111) 7×7 Surface

Etch pits and dislocation in brace 1012 brace Czochralski sapphire wafers

Stephanostomum casum (Linton), a Trematode Possessing a Uroproct

Epitaxial growth and characterization of GaP on insulating substrates

Crystal growth and defect characterization of heteroepitaxial III–V semiconductor films

Atomic Structure of the Si(111) 7 x 7 Surface

Atomic structure of the Si/111/ 7 x 7 surface

Growth and characterization of large stoichiometric magnesium aluminate spinel single crystals

Dislocations in Si Layers Grown on Si-Ribbon Substrates

Epitaxial Si Solar Cells on 'Ribbon' Substrates

Formation of Dislocation Networks in Gallium Single Crystals

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