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AlxGa1-xN-based back-illuminated solar-blind photodetectors with external quantum efficiency of 89

Applied physics letters, 2013-11, Vol.103 (19)

2013

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Sandwich method to grow high quality AlN by MOCVD

Journal of physics. D, Applied physics, 2018-02, Vol.51 (8), p.85104

2018

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Arsenic exposure in Latin America: Biomarkers, risk assessments and related health effects

The Science of the total environment, 2012-07, Vol.429, p.76-91

2012

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AlxGa1−xN-based solar-blind ultraviolet photodetector based on lateral epitaxial overgrowth of AlN on Si substrate

Applied physics letters, 2013-10, Vol.103 (18)

2013

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Biomarkers of mitochondrial dysfunction in acute respiratory distress syndrome: A systematic review and meta-analysis

Frontiers in medicine, 2022-12, Vol.9, p.1011819-1011819

2022

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High power frequency comb based on mid-infrared quantum cascade laser at λ ∼ 9 μ m

Applied physics letters, 2015-02, Vol.106 (5)

2015

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Geiger-mode operation of ultraviolet avalanche photodiodes grown on sapphire and free-standing GaN substrates

Applied physics letters, 2010-06, Vol.96 (26)

2010

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Palliative care in patients with bladder cancer: an opportunity for value improvement?

BJU international, 2019-06, Vol.123 (6), p.913-914

McClintock, Tyler R.

2019

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Hole-initiated multiplication in back-illuminated GaN avalanche photodiodes

Applied physics letters, 2007-04, Vol.90 (14), p.141112-141112-3

2007

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Avalanche multiplication in AlGaN based solar-blind photodetectors

Applied physics letters, 2005-12, Vol.87 (24), p.241123-241123-3

2005

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High-power 280 nm AlGaN light-emitting diodes based on an asymmetric single-quantum well

Applied physics letters, 2004-02, Vol.84 (7), p.1046-1048

2004

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Arsenic exposure from drinking water and QT-interval prolongation: results from the Health Effects of Arsenic Longitudinal Study

Environmental health perspectives, 2013-04, Vol.121 (4), p.427-432

2013

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GaN avalanche photodiodes grown on m-plane freestanding GaN substrate

Applied physics letters, 2010-05, Vol.96 (20), p.201908-201908-3

2010

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Delta-doping optimization for high quality p -type GaN

Journal of applied physics, 2008-10, Vol.104 (8), p.083512-083512-5

2008

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Crack-free AlGaN for solar-blind focal plane arrays through reduced area epitaxy

Applied physics letters, 2013-02, Vol.102 (5)

2013

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High quantum efficiency AlGaN solar-blind p-i-n photodiodes

Applied physics letters, 2004-02, Vol.84 (8), p.1248-1250

2004

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4.5 mW operation of AlGaN-based 267 nm deep-ultraviolet light-emitting diodes

Applied physics letters, 2003-12, Vol.83 (23), p.4701-4703

2003

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Back-illuminated separate absorption and multiplication GaN avalanche photodiodes

Applied physics letters, 2008-03, Vol.92 (10), p.101120-101120-3

2008

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A review of III-nitride research at the Center for Quantum Devices

Journal of crystal growth, 2009-05, Vol.311 (10), p.3067-3074

2009

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Antimonide-Based Type II Superlattices: A Superior Candidate for the Third Generation of Infrared Imaging Systems

Journal of electronic materials, 2014-08, Vol.43 (8), p.2802-2807

2014

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Photoluminescence study of AlGaN-based 280 nm ultraviolet light-emitting diodes

Applied physics letters, 2003-11, Vol.83 (20), p.4083-4085

2003

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Association between arsenic exposure from drinking water and hematuria: Results from the Health Effects of Arsenic Longitudinal Study

Toxicology and applied pharmacology, 2014-04, Vol.276 (1), p.21-27

2014

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Pulsed metal-organic chemical vapor deposition of high-quality AlN/GaN superlattices for near-infrared intersubband transitions

Applied physics letters, 2009-03, Vol.94 (12), p.121902-121902-3

2009

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Near-infrared Fluorescence Imaging: Emerging Applications in Robotic Upper Urinary Tract Surgery

European urology, 2014-04, Vol.65 (4), p.793-801

2014

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Top-emission ultraviolet light-emitting diodes with peak emission at 280 nm

Applied physics letters, 2002-07, Vol.81 (5), p.801-802

2002

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AlxGa1-xN-based back-illuminated solar-blind photodetectors with external quantum efficiency of 89

Sandwich method to grow high quality AlN by MOCVD

Arsenic exposure in Latin America: Biomarkers, risk assessments and related health effects

AlxGa1−xN-based solar-blind ultraviolet photodetector based on lateral epitaxial overgrowth of AlN on Si substrate

Biomarkers of mitochondrial dysfunction in acute respiratory distress syndrome: A systematic review and meta-analysis

High power frequency comb based on mid-infrared quantum cascade laser at λ ∼ 9 μ m

Geiger-mode operation of ultraviolet avalanche photodiodes grown on sapphire and free-standing GaN substrates

Palliative care in patients with bladder cancer: an opportunity for value improvement?

Hole-initiated multiplication in back-illuminated GaN avalanche photodiodes

Avalanche multiplication in AlGaN based solar-blind photodetectors

High-power 280 nm AlGaN light-emitting diodes based on an asymmetric single-quantum well

Arsenic exposure from drinking water and QT-interval prolongation: results from the Health Effects of Arsenic Longitudinal Study

GaN avalanche photodiodes grown on m-plane freestanding GaN substrate

Delta-doping optimization for high quality p -type GaN

Crack-free AlGaN for solar-blind focal plane arrays through reduced area epitaxy

High quantum efficiency AlGaN solar-blind p-i-n photodiodes

4.5 mW operation of AlGaN-based 267 nm deep-ultraviolet light-emitting diodes

Back-illuminated separate absorption and multiplication GaN avalanche photodiodes

A review of III-nitride research at the Center for Quantum Devices

Antimonide-Based Type II Superlattices: A Superior Candidate for the Third Generation of Infrared Imaging Systems

Photoluminescence study of AlGaN-based 280 nm ultraviolet light-emitting diodes

Association between arsenic exposure from drinking water and hematuria: Results from the Health Effects of Arsenic Longitudinal Study

Pulsed metal-organic chemical vapor deposition of high-quality AlN/GaN superlattices for near-infrared intersubband transitions

Near-infrared Fluorescence Imaging: Emerging Applications in Robotic Upper Urinary Tract Surgery

Top-emission ultraviolet light-emitting diodes with peak emission at 280 nm

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