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Single-photon emitting diode in silicon carbide

Nature communications, 2015-07, Vol.6 (1), Article 7783

2015

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Engineering Single Defects in Silicon Carbide Bulk, Nanostructures and Devices

Materials Science Forum, 2016-05, Vol.858, p.312-317

2016

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Dopant enhanced H diffusion in amorphous silicon and its effect on the kinetics of solid phase epitaxy

Materials science & engineering. B, Solid-state materials for advanced technology, 2009-02, Vol.157 (1), p.6-10

2009

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Single crystalline SiGe layers on Si by solid phase epitaxy

Journal of crystal growth, 2015-04, Vol.416, p.34-40

2015

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The kinetics of dopant-enhanced solid phase epitaxy in H-free amorphous silicon layers

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1999, Vol.148 (1), p.350-354

McCallum, J.C

1999

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Temperature dependence of blistering in hydrogen implanted Si and Ge

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2013-07, Vol.307, p.29-32

2013

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Valley population of donor states in highly strained silicon

Materials for quantum technology, 2022-06, Vol.2 (2), p.25002

2022

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Giant, Anomalous Piezoimpedance in Silicon-on-insulator

Physical review applied, 2019-04, Vol.11 (4), Article 044010

2019

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Optically Active Defects at the Si C / Si O 2 Interface

Physical review applied, 2019-10, Vol.12 (4), Article 044024

2019

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Real-time in situ study of hydrogen diffusion in amorphous Si formed by ion implantation

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2011-11, Vol.269 (22), p.2657-2661

2011

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Deep level transient spectroscopy study for the development of ion-implanted silicon field-effect transistors for spin-dependent transport

Thin solid films, 2010-02, Vol.518 (9), p.2524-2527

2010

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Hydrogen in amorphous Si and Ge during solid phase epitaxy

Thin solid films, 2010-02, Vol.518 (9), p.2317-2322

2010

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Angular dependence of defect formation in H-implanted silicon studied using deep level transient spectroscopy

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2007-04, Vol.257 (1-2), p.212-216

2007

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Conditions for the formation of Ti 3+ by ion implantation of a-axis α-Al 2O 3

Materials science & engineering. B, Solid-state materials for advanced technology, 2004, Vol.106 (3), p.257-262

2004

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Association between surface electromyography of human jaw-closing muscle and quantified food breakdown

Archives of oral biology, 1991, Vol.36 (12), p.893-898

1991

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Conditions for the formation of Ti3+ by ion implantation of a-axis α-Al2O3

Materials science & engineering. B, Solid-state materials for advanced technology, 2004-02, Vol.106 (3), p.257-262

2004

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Implantation angle dependent study of vacancy related defect profiles in ion implanted silicon

Physica. B, Condensed matter, 2003-12, Vol.340-342, p.748-751

2003

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Ion microbeam applications in semiconductors

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1988-03, Vol.30 (3), p.480-485

1988

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The potential for the fabrication of wires embedded in the crystalline silicon substrate using the solid phase segregation of gold in crystallising amorphous volumes

Materials science & engineering. B, Solid-state materials for advanced technology, 2004-05, Vol.108 (3), p.227-240

2004

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Minimisation of spanning dislocations in the crystallisation of deep amorphous silicon wells through the alignment of volume edges with fast growth directions

Materials science & engineering. B, Solid-state materials for advanced technology, 2003-01, Vol.97 (2), p.167-175

2003

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Collapse of nanocavities studied by ion-channeling and Raman spectroscopy

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2002-05, Vol.190 (1), p.602-605

2002

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Ti:sapphire formation via the co-implantation of Ti and O ions into sapphire

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2001-04, Vol.175, p.537-541

2001

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Structural characterisation of Ti:sapphire regions formed by localised high-energy implantation of Ti and O ions

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2001-07, Vol.181 (1), p.372-376

2001

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The effect of potassium on the rate of solid phase epitaxy in silicon

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2002-05, Vol.190 (1), p.777-781

2002

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Synthesis of Ti:sapphire by ion implantation

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1999, Vol.148 (1), p.726-729

1999

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Single-photon emitting diode in silicon carbide

Engineering Single Defects in Silicon Carbide Bulk, Nanostructures and Devices

Dopant enhanced H diffusion in amorphous silicon and its effect on the kinetics of solid phase epitaxy

Single crystalline SiGe layers on Si by solid phase epitaxy

The kinetics of dopant-enhanced solid phase epitaxy in H-free amorphous silicon layers

Temperature dependence of blistering in hydrogen implanted Si and Ge

Valley population of donor states in highly strained silicon

Giant, Anomalous Piezoimpedance in Silicon-on-insulator

Optically Active Defects at the Si C / Si O 2 Interface

Real-time in situ study of hydrogen diffusion in amorphous Si formed by ion implantation

Deep level transient spectroscopy study for the development of ion-implanted silicon field-effect transistors for spin-dependent transport

Hydrogen in amorphous Si and Ge during solid phase epitaxy

Angular dependence of defect formation in H-implanted silicon studied using deep level transient spectroscopy

Conditions for the formation of Ti 3+ by ion implantation of a-axis α-Al 2O 3

Association between surface electromyography of human jaw-closing muscle and quantified food breakdown

Conditions for the formation of Ti3+ by ion implantation of a-axis α-Al2O3

Implantation angle dependent study of vacancy related defect profiles in ion implanted silicon

Ion microbeam applications in semiconductors

The potential for the fabrication of wires embedded in the crystalline silicon substrate using the solid phase segregation of gold in crystallising amorphous volumes

Minimisation of spanning dislocations in the crystallisation of deep amorphous silicon wells through the alignment of volume edges with fast growth directions

Collapse of nanocavities studied by ion-channeling and Raman spectroscopy

Ti:sapphire formation via the co-implantation of Ti and O ions into sapphire

Structural characterisation of Ti:sapphire regions formed by localised high-energy implantation of Ti and O ions

The effect of potassium on the rate of solid phase epitaxy in silicon

Synthesis of Ti:sapphire by ion implantation

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