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Microscopic Imaging of the Stress Tensor in Diamond Using in Situ Quantum Sensors

Nano letters, 2019-07, Vol.19 (7), p.4543-4550

2019

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Formation of an r8-Dominant Si Material

Physical review letters, 2019-03, Vol.122 (10), p.105701-105701, Article 105701

2019

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Infrared erbium photoluminescence enhancement in silicon carbide nano-pillars

Journal of applied physics, 2021-10, Vol.130 (14)

2021

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Quantifying the quantum gate fidelity of single-atom spin qubits in silicon by randomized benchmarking

Journal of physics. Condensed matter, 2015-04, Vol.27 (15), p.154205-154205

2015

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Deep-Level Structure of the Spin-Active Recombination Center in Dilute Nitrides

Physical review letters, 2024-05, Vol.132 (18), p.186402-186402, Article 186402

2024

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All-Electrical Readout of Coherently Controlled Spins in Silicon Carbide

Physical review letters, 2024-04, Vol.132 (14), p.146902-146902, Article 146902

2024

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Activation and control of visible single defects in 4H-, 6H-, and 3C-SiC by oxidation

Applied physics letters, 2016-01, Vol.108 (2)

2016

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A review on single photon sources in silicon carbide

Reports on progress in physics, 2017-03, Vol.80 (3), p.034502-034502

2017

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Optical and electronic properties of sub-surface conducting layers in diamond created by MeV B-implantation at elevated temperatures

Journal of applied physics, 2016-06, Vol.119 (22)

2016

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Controlled deterministic implantation by nanostencil lithography at the limit of ion-aperture straggling

Nanotechnology, 2013-04, Vol.24 (14), p.145304-145304

2013

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Enhanced magnetometry with an electrically detected spin defect ensemble in silicon carbide

Applied physics letters, 2023-06, Vol.122 (23)

2023

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Charge pumping electrically detected magnetic resonance of silicon carbide power transistors

Journal of applied physics, 2023-08, Vol.134 (5)

2023

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Spatial mapping of band bending in semiconductor devices using in situ quantum sensors

Nature electronics, 2018-09, Vol.1 (9), p.502-507

2018

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Deep level transient spectroscopy study of heavy ion implantation induced defects in silicon

Journal of applied physics, 2018-09, Vol.124 (12)

2018

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Single atom devices by ion implantation

Journal of physics. Condensed matter, 2015-04, Vol.27 (15), p.154204-154204

2015

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Single-photon emitting diode in silicon carbide

Nature communications, 2015-07, Vol.6, p.7783-7783

2015

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Thermal evolution of the indentation-induced phases of silicon

Journal of applied physics, 2019-09, Vol.126 (10)

2019

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Investigation of charge carrier trapping in H-terminated diamond devices

Applied physics letters, 2020-10, Vol.117 (14)

2020

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Atomic transport during solid-phase epitaxial recrystallization of amorphous germanium

Applied physics letters, 2015-08, Vol.107 (8)

2015

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Dopant effects on solid phase epitaxy in silicon and germanium

Journal of applied physics, 2012-02, Vol.111 (3), p.034906-034906-6

2012

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Au-rich filamentary behavior and associated subband gap optical absorption in hyperdoped Si

Physical review materials, 2017-12, Vol.1 (7), Article 074602

2017

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Engineering chromium-related single photon emitters in single crystal diamonds

New journal of physics, 2011-04, Vol.13 (4), p.045015

2011

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Progress in silicon-based quantum computing

Philosophical transactions of the Royal Society of London. Series A: Mathematical, physical, and engineering sciences, 2003-07, Vol.361 (1808), p.1451-1471

2003

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Erbium-doped slot waveguides containing size-controlled silicon nanocrystals

Journal of applied physics, 2015-04, Vol.117 (16), p.163106

2015

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Valley population of donor states in highly strained silicon

Materials for quantum technology, 2022-06, Vol.2 (2), p.25002

2022

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Microscopic Imaging of the Stress Tensor in Diamond Using in Situ Quantum Sensors

Formation of an r8-Dominant Si Material

Infrared erbium photoluminescence enhancement in silicon carbide nano-pillars

Quantifying the quantum gate fidelity of single-atom spin qubits in silicon by randomized benchmarking

Deep-Level Structure of the Spin-Active Recombination Center in Dilute Nitrides

All-Electrical Readout of Coherently Controlled Spins in Silicon Carbide

Activation and control of visible single defects in 4H-, 6H-, and 3C-SiC by oxidation

A review on single photon sources in silicon carbide

Optical and electronic properties of sub-surface conducting layers in diamond created by MeV B-implantation at elevated temperatures

Controlled deterministic implantation by nanostencil lithography at the limit of ion-aperture straggling

Enhanced magnetometry with an electrically detected spin defect ensemble in silicon carbide

Charge pumping electrically detected magnetic resonance of silicon carbide power transistors

Spatial mapping of band bending in semiconductor devices using in situ quantum sensors

Deep level transient spectroscopy study of heavy ion implantation induced defects in silicon

Single atom devices by ion implantation

Single-photon emitting diode in silicon carbide

Thermal evolution of the indentation-induced phases of silicon

Investigation of charge carrier trapping in H-terminated diamond devices

Atomic transport during solid-phase epitaxial recrystallization of amorphous germanium

Dopant effects on solid phase epitaxy in silicon and germanium

Au-rich filamentary behavior and associated subband gap optical absorption in hyperdoped Si

Engineering chromium-related single photon emitters in single crystal diamonds

Progress in silicon-based quantum computing

Erbium-doped slot waveguides containing size-controlled silicon nanocrystals

Valley population of donor states in highly strained silicon

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