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Normally-Off SiC VJFETs for 800 V and 1200 V Power Switching Applications

2008 20th International Symposium on Power Semiconductor Devices and IC's, 2008, p.260-262

2008

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Vertical Channel Silicon Carbide JFETs Based Operational Amplifiers

Materials science forum, 2013-01, Vol.740-742, p.1069-1072

2013

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Application of a Normally OFF Silicon Carbide Power JFET in a Photovoltaic Inverter

2009 Twenty-Fourth Annual IEEE Applied Power Electronics Conference and Exposition, 2009, p.649-652

2009

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Influence of Source/Drain Residual Implant Lattice Damage Traps on Silicon Carbide Metal Semiconductor Field-Effect Transistor Drain I-V Characteristics

Physics procedia, 2012, Vol.25, p.158-169

2012

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Design of a Silicon Carbide JFET based operational amplifier for gain and CMRR performance

2009 IEEE International Symposium on Circuits and Systems (ISCAS), 2009, p.1953-1956

2009

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SiC JFET gate driver design for use in DC/DC converters

Twenty-First Annual IEEE Applied Power Electronics Conference and Exposition, 2006. APEC '06, 2006, p.4 pp.

2006

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Infrared quenching of conductivity at high electric fields in a bulk, copper-compensated, optically activated GaAs switch

IEEE transactions on electron devices, 1990-12, Vol.37 (12), p.2499-2505

1990

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Recombination-induced formation of hydrogen–defect complexes in 4H and 6H–SiC: electrical and optical characterization

Physica. B, Condensed matter, 2003-12, Vol.340-342, p.180-183

2003

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A scalable SiC device for DC/DC converters in future hybrid electric vehicles

Twenty-First Annual IEEE Applied Power Electronics Conference and Exposition, 2006. APEC '06, 2006, p.4 pp.

2006

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Inherently safe DC/DC converter using a normally-on SiC JFET

Twentieth Annual IEEE Applied Power Electronics Conference and Exposition, 2005. APEC 2005, 2005, Vol.3, p.1561-1565 Vol. 3

2005

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Cryogenic and high temperature performance of 4H-SiC vertical junction field effect transistors (VJFETs) for space applications

Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005, 2005, p.231-234

2005

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SiC devices for converter and motor drive applications at extreme temperatures

2006 IEEE Aerospace Conference, 2006, p.6 pp.

2006

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Silicon carbide CVD homoepitaxy on wafers with reduced micropipe density

Materials science & engineering. B, Solid-state materials for advanced technology, 1999-07, Vol.61, p.158-160

1999

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On development of 6H-SiC LDMOS transistors using silane-ambient implant anneal

Solid-state electronics, 2001-09, Vol.45 (9), p.1653-1657

2001

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Silicon Carbide Power Devices and Processing

MRS proceedings, 2003, Vol.764, Article C1.3

2003

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A solid-state modulator for environmental applications of pulsed acoustics

Digest of Technical Papers. 12th IEEE International Pulsed Power Conference. (Cat. No.99CH36358), 1999, Vol.1, p.458-459 vol.1

Mazzola, M.S.

1999

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Effects of 1-MeV neutron irradiation on the operation of a bistable optically controlled semiconductors with (BOSS)

IEEE transactions on electron devices, 1994-06, Vol.41:6

1994

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Effects of 1-MeV neutron irradiation on the operation of a bistable optically controlled semiconductor switch (BOSS)

IEEE transactions on electron devices, 1994-06, Vol.41 (6), p.913-919

1994

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Infrared photoconductivity via deep copper acceptors in silicon-doped, copper-compensated gallium arsenide photoconductive switches

IEEE transactions on electron devices, 1993-06, Vol.40 (6), p.1081-1086

1993

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Design of bulk optically controlled semiconductor switches for microelectronics applications

International Conference on Plasma Sciences (ICOPS), 1993, p.195

1993

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Semi-insulating 6H-SIC Epitaxial Films

Proceedings of 1994 IEEE 21st International Conference on Plasma Sciences (ICOPS), 1994, p.193-193

1994

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Investigation of Al/sub 2/O/sub 3/ and TiO/sub 2/ as gate insulators for 4H-SiC pulsed power devices

Conference Record of the Twenty-Sixth International Power Modulator Symposium, 2004 and 2004 High-Voltage Workshop, 2004, p.501-504

2004

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Breakdown mechanisms in a pulse-charged spark gap

IEEE Conference Record of the 1988 Eighteenth Power Modulator Symposium, 1988, p.215-218

1988

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Gallium-arsenide optically isolated electric field sensor for utility and pulsed power applications

Digest of Technical Papers. Tenth IEEE International Pulsed Power Conference, 1995, Vol.1, p.372-377 vol.1

1995

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Simulations of a high power 4H-SiC VJFET and its GaAs counterpart

Digest of Technical Papers. PPC-2003. 14th IEEE International Pulsed Power Conference (IEEE Cat. No.03CH37472), 2003, Vol.1, p.123-126 Vol.1

2003

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Normally-Off SiC VJFETs for 800 V and 1200 V Power Switching Applications

Vertical Channel Silicon Carbide JFETs Based Operational Amplifiers

Application of a Normally OFF Silicon Carbide Power JFET in a Photovoltaic Inverter

Influence of Source/Drain Residual Implant Lattice Damage Traps on Silicon Carbide Metal Semiconductor Field-Effect Transistor Drain I-V Characteristics

Design of a Silicon Carbide JFET based operational amplifier for gain and CMRR performance

SiC JFET gate driver design for use in DC/DC converters

Infrared quenching of conductivity at high electric fields in a bulk, copper-compensated, optically activated GaAs switch

Recombination-induced formation of hydrogen–defect complexes in 4H and 6H–SiC: electrical and optical characterization

A scalable SiC device for DC/DC converters in future hybrid electric vehicles

Inherently safe DC/DC converter using a normally-on SiC JFET

Cryogenic and high temperature performance of 4H-SiC vertical junction field effect transistors (VJFETs) for space applications

SiC devices for converter and motor drive applications at extreme temperatures

Silicon carbide CVD homoepitaxy on wafers with reduced micropipe density

On development of 6H-SiC LDMOS transistors using silane-ambient implant anneal

Silicon Carbide Power Devices and Processing

A solid-state modulator for environmental applications of pulsed acoustics

Effects of 1-MeV neutron irradiation on the operation of a bistable optically controlled semiconductors with (BOSS)

Effects of 1-MeV neutron irradiation on the operation of a bistable optically controlled semiconductor switch (BOSS)

Infrared photoconductivity via deep copper acceptors in silicon-doped, copper-compensated gallium arsenide photoconductive switches

Design of bulk optically controlled semiconductor switches for microelectronics applications

Semi-insulating 6H-SIC Epitaxial Films

Investigation of Al/sub 2/O/sub 3/ and TiO/sub 2/ as gate insulators for 4H-SiC pulsed power devices

Breakdown mechanisms in a pulse-charged spark gap

Gallium-arsenide optically isolated electric field sensor for utility and pulsed power applications

Simulations of a high power 4H-SiC VJFET and its GaAs counterpart

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