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Optical Properties of a Quantum Dot-Ring System Grown Using Droplet Epitaxy

Nanoscale research letters, 2016-12, Vol.11 (1), p.309-8, Article 309

2016

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Fabrication of (In,Ga)As quantum-dot chains on GaAs(100)

Applied physics letters, 2004-03, Vol.84 (11), p.1931-1933

2004

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Strong passivation effects on the properties of an InAs surface quantum dot hybrid structure

Nanotechnology, 2013-02, Vol.24 (7), p.075701-075701

2013

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Optical evidence of a quantum well channel in low temperature molecular beam epitaxy grown Ga(AsBi)/GaAs nanostructure

Nanotechnology, 2011-09, Vol.22 (37), p.375703-1-6

2011

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Interdot carrier transfer in asymmetric bilayer InAs ∕ GaAs quantum dot structures

Applied physics letters, 2005-02, Vol.86 (6), p.063102-063102-3

2005

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Dynamic configurational resonances caused by optical nonlinearities in ultra-fast near-field microscopy

Journal of optics (2010), 2013-03, Vol.15 (3), p.35204-1-13

2013

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InGaAs/GaAs three-dimensionally-ordered array of quantum dots

Applied physics letters, 2003-08, Vol.83 (5), p.987-989

2003

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InSb Quantum-Well-Based Micro-Hall Devices: Potential for pT Detectivity

IEEE transactions on electron devices, 2009-04, Vol.56 (4), p.683-687

2009

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Effects of spatial confinement and layer disorder in photoluminescence of GaAs sub(1-x)Bi sub(x)/GaAs heterostructures

Journal of physics. D, Applied physics, 2013-02, Vol.46 (6), p.065306-1-8

2013

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Anisotropic photoconductivity of InGaAs quantum dot chains measured by terahertz pulse spectroscopy

Applied physics letters, 2004-10, Vol.85 (17), p.3839-3841

2004

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Photoluminescence study of carrier transfer among vertically aligned double-stacked InAs/GaAs quantum dot layers

Applied physics letters, 2002-09, Vol.81 (13), p.2469-2471

2002

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Investigation of indium distribution in InGaAs ∕ GaAs quantum dot stacks using high-resolution x-ray diffraction and Raman scattering

Journal of applied physics, 2006-01, Vol.99 (2), p.023517-023517-10

2006

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Photoluminescence linewidths from multiple layers of laterally self-ordered InGaAs quantum dots

Applied physics letters, 2005-11, Vol.87 (21), p.213105-213105-3

2005

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Strained Quantum Well InAs Micro-Hall Sensors: Dependence of Device Performance on Channel Thickness

IEEE transactions on electron devices, 2008-02, Vol.55 (2), p.695-700

2008

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Highly sensitive micro-Hall devices based on Al0.12In0.88Sb∕InSb heterostructures

Journal of applied physics, 2005-07, Vol.98 (1)

2005

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Transient luminescence of dense InAs/GaAs quantum dot arrays

Physical review. B, Condensed matter, 2003-01, Vol.67 (4), Article 045326

2003

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One-dimensional postwetting layer in InGaAs∕GaAs(100) quantum-dot chains

Journal of applied physics, 2006-02, Vol.99 (3)

2006

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Carrier transfer in self-assembled coupled InAs/GaAs quantum dots

Journal of applied physics, 2000-12, Vol.88 (12), p.7162-7170

2000

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Nonresonant tunneling carrier transfer in bilayer asymmetric InAs/GaAs quantum dots

Physical review. B, Condensed matter and materials physics, 2005-06, Vol.71 (23), p.235313.1-235313.8

2005

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Control on self-organization of InGaAs/GaAs(100) quantum-dot chains

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2005-07, Vol.23 (4), p.1732-1735

2005

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Staircase-like spectral dependence of ground-state luminescence time constants in high-density InAs/GaAs quantum dots

Applied physics letters, 2001-05, Vol.78 (21), p.3214-3216

2001

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Persistence of (In,Ga)As quantum-dot chains under index deviation from GaAs(100)

Applied physics letters, 2004-06, Vol.84 (23), p.4681-4683

2004

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Tailoring of high-temperature photoluminescence in InAs∕GaAs bilayer quantum dot structures

Journal of applied physics, 2005-09, Vol.98 (5)

2005

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Doped-channel micro-Hall devices: Size and geometry effects

Journal of applied physics, 2005-11, Vol.98 (9), p.094503-094503-5

2005

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Three-dimensional self-ordering in an InGaAs/GaAs multilayered quantum dot structure investigated by x-ray diffuse scattering

Journal of physics. D, Applied physics, 2005-05, Vol.38 (10A), p.A154-A159

2005

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Optical Properties of a Quantum Dot-Ring System Grown Using Droplet Epitaxy

Fabrication of (In,Ga)As quantum-dot chains on GaAs(100)

Strong passivation effects on the properties of an InAs surface quantum dot hybrid structure

Optical evidence of a quantum well channel in low temperature molecular beam epitaxy grown Ga(AsBi)/GaAs nanostructure

Interdot carrier transfer in asymmetric bilayer InAs ∕ GaAs quantum dot structures

Dynamic configurational resonances caused by optical nonlinearities in ultra-fast near-field microscopy

InGaAs/GaAs three-dimensionally-ordered array of quantum dots

InSb Quantum-Well-Based Micro-Hall Devices: Potential for pT Detectivity

Effects of spatial confinement and layer disorder in photoluminescence of GaAs sub(1-x)Bi sub(x)/GaAs heterostructures

Anisotropic photoconductivity of InGaAs quantum dot chains measured by terahertz pulse spectroscopy

Photoluminescence study of carrier transfer among vertically aligned double-stacked InAs/GaAs quantum dot layers

Investigation of indium distribution in InGaAs ∕ GaAs quantum dot stacks using high-resolution x-ray diffraction and Raman scattering

Photoluminescence linewidths from multiple layers of laterally self-ordered InGaAs quantum dots

Strained Quantum Well InAs Micro-Hall Sensors: Dependence of Device Performance on Channel Thickness

Highly sensitive micro-Hall devices based on Al0.12In0.88Sb∕InSb heterostructures

Transient luminescence of dense InAs/GaAs quantum dot arrays

One-dimensional postwetting layer in InGaAs∕GaAs(100) quantum-dot chains

Carrier transfer in self-assembled coupled InAs/GaAs quantum dots

Nonresonant tunneling carrier transfer in bilayer asymmetric InAs/GaAs quantum dots

Control on self-organization of InGaAs/GaAs(100) quantum-dot chains

Staircase-like spectral dependence of ground-state luminescence time constants in high-density InAs/GaAs quantum dots

Persistence of (In,Ga)As quantum-dot chains under index deviation from GaAs(100)

Tailoring of high-temperature photoluminescence in InAs∕GaAs bilayer quantum dot structures

Doped-channel micro-Hall devices: Size and geometry effects

Three-dimensional self-ordering in an InGaAs/GaAs multilayered quantum dot structure investigated by x-ray diffuse scattering

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