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Optical Properties of a Quantum Dot-Ring System Grown Using Droplet Epitaxy

Nanoscale research letters, 2016-12, Vol.11 (1), p.309-8, Article 309

2016

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Spatially Localized Formation of InAs Quantum Dots on Shallow Patterns Regardless of Crystallographic Directions

Advanced functional materials, 2007-11, Vol.17 (16), p.3187-3193

2007

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Surface effects of vapour-liquid-solid driven Bi surface droplets formed during molecular-beam-epitaxy of GaAsBi

Scientific reports, 2016-07, Vol.6 (1), p.28860, Article 28860

2016

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InSb Quantum-Well-Based Micro-Hall Devices: Potential for pT Detectivity

IEEE transactions on electron devices, 2009-04, Vol.56 (4), p.683-687

2009

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IEEE_Xplore

1.3 μm InAs/GaAs quantum-dot laser monolithically grown on Si substrates operating over 100°C

Electronics letters, 2014-09, Vol.50 (20), p.1467-1468

2014

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Photoluminescence linewidths from multiple layers of laterally self-ordered InGaAs quantum dots

Applied physics letters, 2005-11, Vol.87 (21), p.213105-213105-3

2005

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The impact of defects to minority-carrier dynamics in heavily doped GaAs:C analyzed by transient photoluminescence spectroscopy

Materials science & engineering. B, Solid-state materials for advanced technology, 2002-04, Vol.91, p.25-28

2002

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Strained Quantum Well InAs Micro-Hall Sensors: Dependence of Device Performance on Channel Thickness

IEEE transactions on electron devices, 2008-02, Vol.55 (2), p.695-700

2008

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IEEE_Xplore

InAs/InGaP quantum dot solar cells with an AlGaAs interlayer

Solar energy materials and solar cells, 2016-01, Vol.144, p.96-101

2016

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Manganese concentration effect on the lattice dynamics in multinary spin doped semiconductors

Journal of alloys and compounds, 2004-05, Vol.371 (1-2), p.58-62

2004

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Decrease of non-thermal electron scattering in semi-magnetic HgCdMnTe crystals

Journal of alloys and compounds, 2004-05, Vol.371 (1-2), p.206-208

2004

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Size distribution in self-assembled InAs quantum dots on GaAs (001) for intermediate InAs coverage

Physical review. B, Condensed matter, 2000-09, Vol.62 (11), p.7213-7218

2000

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1.3 µm InAs/GaAs quantum-dot laser monolithically grown on Si substrates operating over 100°C

Electronics letters, 2014-09, Vol.50 (20), p.1

2014

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Minority-carrier kinetics in heavily doped GaAs:C studied by transient photoluminescence

Journal of applied physics, 2002-04, Vol.91 (8), p.5072-5078

2002

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1.3 mu m InAs/GaAs quantum-dot laser monolithically grown on Si substrates operating over 100 degree C

Electronics letters, 2014-09, Vol.50 (20), p.1-1

2014

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Fabrication of (In,Ga)As quantum-dot chains on GaAs(100)

Applied physics letters, 2004-03, Vol.84 (11), p.1931-1933

2004

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Interdot energy transfer in a system of coupled InAs/GaAs quantum dots

Physica. E, Low-dimensional systems & nanostructures, 2002-03, Vol.13 (2), p.255-258

2002

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Strong passivation effects on the properties of an InAs surface quantum dot hybrid structure

Nanotechnology, 2013-02, Vol.24 (7), p.075701-075701

2013

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Low-Density Quantum Dot Molecules by Selective Etching Using in Droplet as a Mask

IEEE transactions on nanotechnology, 2011-05, Vol.10 (3), p.600-605

2011

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IEEE_Xplore

Optical evidence of a quantum well channel in low temperature molecular beam epitaxy grown Ga(AsBi)/GaAs nanostructure

Nanotechnology, 2011-09, Vol.22 (37), p.375703-1-6

2011

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1.3µm InAs/GaAs Quantum-Dot Laser Monolithically Grown on Si Substrates Using InAlAs/GaAs Dislocation Filter Layers

2014 International Semiconductor Laser Conference, 2014, p.88-89

2014

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IEEE_Xplore

Interdot carrier transfer in asymmetric bilayer InAs ∕ GaAs quantum dot structures

Applied physics letters, 2005-02, Vol.86 (6), p.063102-063102-3

2005

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Dynamic configurational resonances caused by optical nonlinearities in ultra-fast near-field microscopy

Journal of optics (2010), 2013-03, Vol.15 (3), p.35204-1-13

2013

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InGaAs/GaAs three-dimensionally-ordered array of quantum dots

Applied physics letters, 2003-08, Vol.83 (5), p.987-989

2003

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Effects of spatial confinement and layer disorder in photoluminescence of GaAs sub(1-x)Bi sub(x)/GaAs heterostructures

Journal of physics. D, Applied physics, 2013-02, Vol.46 (6), p.065306-1-8

2013

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Optical Properties of a Quantum Dot-Ring System Grown Using Droplet Epitaxy

Spatially Localized Formation of InAs Quantum Dots on Shallow Patterns Regardless of Crystallographic Directions

Surface effects of vapour-liquid-solid driven Bi surface droplets formed during molecular-beam-epitaxy of GaAsBi

InSb Quantum-Well-Based Micro-Hall Devices: Potential for pT Detectivity

1.3 μm InAs/GaAs quantum-dot laser monolithically grown on Si substrates operating over 100°C

Photoluminescence linewidths from multiple layers of laterally self-ordered InGaAs quantum dots

The impact of defects to minority-carrier dynamics in heavily doped GaAs:C analyzed by transient photoluminescence spectroscopy

Strained Quantum Well InAs Micro-Hall Sensors: Dependence of Device Performance on Channel Thickness

InAs/InGaP quantum dot solar cells with an AlGaAs interlayer

Manganese concentration effect on the lattice dynamics in multinary spin doped semiconductors

Decrease of non-thermal electron scattering in semi-magnetic HgCdMnTe crystals

Size distribution in self-assembled InAs quantum dots on GaAs (001) for intermediate InAs coverage

1.3 µm InAs/GaAs quantum-dot laser monolithically grown on Si substrates operating over 100°C

Minority-carrier kinetics in heavily doped GaAs:C studied by transient photoluminescence

1.3 mu m InAs/GaAs quantum-dot laser monolithically grown on Si substrates operating over 100 degree C

Fabrication of (In,Ga)As quantum-dot chains on GaAs(100)

Interdot energy transfer in a system of coupled InAs/GaAs quantum dots

Strong passivation effects on the properties of an InAs surface quantum dot hybrid structure

Low-Density Quantum Dot Molecules by Selective Etching Using in Droplet as a Mask

Optical evidence of a quantum well channel in low temperature molecular beam epitaxy grown Ga(AsBi)/GaAs nanostructure

1.3µm InAs/GaAs Quantum-Dot Laser Monolithically Grown on Si Substrates Using InAlAs/GaAs Dislocation Filter Layers

Interdot carrier transfer in asymmetric bilayer InAs ∕ GaAs quantum dot structures

Dynamic configurational resonances caused by optical nonlinearities in ultra-fast near-field microscopy

InGaAs/GaAs three-dimensionally-ordered array of quantum dots

Effects of spatial confinement and layer disorder in photoluminescence of GaAs sub(1-x)Bi sub(x)/GaAs heterostructures

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