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Ultra-low NMOS contact resistivity using a novel plasma-based DSS implant and laser anneal for post 7 nm nodes

2016 IEEE Symposium on VLSI Technology, 2016, p.1-2

2016

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Raman and Infrared Spectroscopy of Optical Phonons in II-VI Alloys, Epilayers and Superlattices

Journal of Raman spectroscopy, 1996-03, Vol.27 (3-4), p.239-247

1996

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Ultralow-resistivity CMOS contact scheme with pre-contact amorphization plus Ti (germano-)silicidation

2016 IEEE Symposium on VLSI Technology, 2016, p.1-2

2016

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Infrared observation of transverse and longitudinal polar optical modes of semiconductor films: Normal and oblique incidence

Physical review. B, Condensed matter, 1995-03, Vol.51 (12), p.7744-7752

1995

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Optical properties of Mg-based II-VI ternaries and quaternaries : Cd1-xMgxTe and Cd1-x-yMgxMnyTe

Physical review. B, Condensed matter, 1993-11, Vol.48 (20), p.15040-15046

1993

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Infrared observation of longitudinal optical modes in MBE-grown polar semiconductor films

Solid state communications, 1993-12, Vol.88 (9), p.711-714

1993

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Sub-10−9 Ω·cm2 contact resistivity on p-SiGe achieved by Ga doping and nanosecond laser activation

2017 Symposium on VLSI Technology, 2017, p.T214-T215

2017

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Evidence for correlated hole distribution in neutron-transmutation-doped isotopically controlled germanium

Physical review. B, Condensed matter, 1996-03, Vol.53 (12), p.7797-7804

1996

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Character association and path analysis in kodo millet (Paspalum scrobiculatum L.) with relation to yield and its attributing traits

Electronic journal of plant breeding, 2023-06, Vol.14 (2), p.730-736

Dhrumi Dalsaniya1, Arna Das1, Kinal Patel1, Sneha Macwana1, D. J. Parmar2, Mayur Sonagara1, Dipak A. Patel3, Vikas Pali4

2023

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Redetermination of the valley-orbit (chemical) splitting of the 1s ground state of group-V donors in silicon

Physical review. B, Condensed matter, 1993-10, Vol.48 (15), p.10893-10898

1993

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Fine structure of the asymmetric stretching vibration of dispersed oxygen in monoisotopic germanium

Physical review. B, Condensed matter, 1994-06, Vol.49 (23), p.16293-16299

1994

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Local modes of substitutional transition metal ions in II–VI semiconductors

Solid state communications, 1994-09, Vol.91 (10), p.785-789

1994

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Electric Field Broadening of Gallium Acceptor States in Compensated Ge: Ga, As

Materials science forum, 1995-01, Vol.196-201, p.127-132

1995

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Thermal processing for continued scaling of semiconductor devices

2014 20th International Conference on Ion Implantation Technology (IIT), 2014, p.1-6

2014

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Host-isotope fine structure of local and gap modes of substitutional impurities in zinc-blende and wurtzite II-VI semiconductors

Physical review. B, Condensed matter, 1996-05, Vol.53 (19), p.12878-12883

1996

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Comprehensive study of Ga activation in Si, SiGe and Ge with 5 × 10−10 Ω·cm2 contact resistivity achieved on Ga doped Ge using nanosecond laser activation

2017 IEEE International Electron Devices Meeting (IEDM), 2017, p.22.4.1-22.4.4

2017

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Silicide yield improvement with NiPtSi formation by laser anneal for advanced low power platform CMOS technology

2009 IEEE International Electron Devices Meeting (IEDM), 2009, p.1-4

2009

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Local modes of substitutional transition metal ions in II-VI semiconductors

Solid state communications, 1994-01, Vol.191 (10), p.785-789

1994

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Local vibrational modes of substitutional Mg2+, Ca2+, and S2- in zinc-blende and wurtzite II-VI semiconductors

Physical review. B, Condensed matter, 1995-03, Vol.51 (11), p.6971-6978

1995

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Electronic excitations of substitutional transition-metal ions in II-VI semiconductors: CdTe:Fe2+ and CdSe:Fe2

Physical review. B, Condensed matter, 1992-09, Vol.46 (12), p.7459-7468

1992

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Evolution of dopants and defects in silicon under various annealing sequences

11th International Workshop on Junction Technology (IWJT), 2011, p.122-127

2011

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Infrared observation of longitudinal optical modes in MBE-grown polar semiconductors films

Solid state communications, 1993, Vol.88 (9), p.711-714

1993

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Advances on 32nm NiPt Salicide process

2009 17th International Conference on Advanced Thermal Processing of Semiconductors, 2009, p.1-4

2009

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Optical phonons in Pb 1 − x Eu x Te epilayers and PbTe / EuTe superlattices: Berreman effect

Physical review. B, Condensed matter, 2001-06, Vol.64 (3), Article 035316

2001

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Local vibrational modes of substitutional Mg 2 + , Ca 2 + , and S 2 − in zinc-blende and wurtzite II-VI semiconductors

Physical review. B, Condensed matter, 1995-03, Vol.51 (11), p.6971-6978

1995

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Ultra-low NMOS contact resistivity using a novel plasma-based DSS implant and laser anneal for post 7 nm nodes

Raman and Infrared Spectroscopy of Optical Phonons in II-VI Alloys, Epilayers and Superlattices

Ultralow-resistivity CMOS contact scheme with pre-contact amorphization plus Ti (germano-)silicidation

Infrared observation of transverse and longitudinal polar optical modes of semiconductor films: Normal and oblique incidence

Optical properties of Mg-based II-VI ternaries and quaternaries : Cd1-xMgxTe and Cd1-x-yMgxMnyTe

Infrared observation of longitudinal optical modes in MBE-grown polar semiconductor films

Sub-10−9 Ω·cm2 contact resistivity on p-SiGe achieved by Ga doping and nanosecond laser activation

Evidence for correlated hole distribution in neutron-transmutation-doped isotopically controlled germanium

Character association and path analysis in kodo millet (Paspalum scrobiculatum L.) with relation to yield and its attributing traits

Redetermination of the valley-orbit (chemical) splitting of the 1s ground state of group-V donors in silicon

Fine structure of the asymmetric stretching vibration of dispersed oxygen in monoisotopic germanium

Local modes of substitutional transition metal ions in II–VI semiconductors

Electric Field Broadening of Gallium Acceptor States in Compensated Ge: Ga, As

Thermal processing for continued scaling of semiconductor devices

Host-isotope fine structure of local and gap modes of substitutional impurities in zinc-blende and wurtzite II-VI semiconductors

Comprehensive study of Ga activation in Si, SiGe and Ge with 5 × 10−10 Ω·cm2 contact resistivity achieved on Ga doped Ge using nanosecond laser activation

Silicide yield improvement with NiPtSi formation by laser anneal for advanced low power platform CMOS technology

Local modes of substitutional transition metal ions in II-VI semiconductors

Local vibrational modes of substitutional Mg2+, Ca2+, and S2- in zinc-blende and wurtzite II-VI semiconductors

Electronic excitations of substitutional transition-metal ions in II-VI semiconductors: CdTe:Fe2+ and CdSe:Fe2

Evolution of dopants and defects in silicon under various annealing sequences

Infrared observation of longitudinal optical modes in MBE-grown polar semiconductors films

Advances on 32nm NiPt Salicide process

Optical phonons in Pb 1 − x Eu x Te epilayers and PbTe / EuTe superlattices: Berreman effect

Local vibrational modes of substitutional Mg 2 + , Ca 2 + , and S 2 − in zinc-blende and wurtzite II-VI semiconductors

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