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On the processing of nanocrystalline and nanocomposite ceramics

Scripta materialia, 2001-05, Vol.44 (8-9), p.2065-2068

2001

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Theory of high pressure/low temperature sintering of bulk nanocrystalline TiO2

Acta materialia, 1997-10, Vol.45 (10), p.4027-4040

1997

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Thermal sprayed nanostructured WC/Co hardcoatings

Journal of thermal spray technology, 2000-09, Vol.9 (3), p.399-406

2000

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In/sub 0.5/(Al/sub x/Ga/sub 1-x/)/sub 0.5/ HEMTs for high-efficiency low-voltage power amplifiers: design, fabrication, and device results

IEEE transactions on microwave theory and techniques, 1999-08, Vol.47 (8), p.1404-1412

1999

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Single- and double-heterojunction pseudomorphic In/sub 0.5/(Al/sub 0.3/Ga/sub 0.7/)/sub 0.5/P/In/sub 0.2/Ga/sub 0.8/As high electron mobility transistors grown by gas source molecular beam epitaxy

IEEE electron device letters, 1997-11, Vol.18 (11), p.550-552

1997

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High pressure/low temperature sintering of nanocrystalline alumina

Nanostructured materials, 1998-08, Vol.10 (6), p.1063-1079

1998

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Transformation-assisted consolidation of bulk nanocrystalline TiO2

Nanostructured materials, 1999-06, Vol.11 (4), p.553-557

1999

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On the Processing of Nanostructured Ceramics

Materials science forum, 2003-01, Vol.437-438, p.399-402

2003

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Effect of structural defects and chemical impurities on hall mobilities in low pressure MOCVD grown GaN

Journal of electronic materials, 1997-03, Vol.26 (3), p.243-251

1997

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Theory of high pressure/low temperature sintering of bulk nanocrystalline TiO 2

Acta materialia, 1997, Vol.45 (10), p.4027-4040

1997

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Arthroscopic synovectomy for recurrent hemarthrosis of the ankle in hemophilia

Arthroscopy, 1996-12, Vol.12 (6), p.652-656

1996

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Plasma-Sprayed Nanostructured Al2O3/TiO2 Powders and Coatings

Journal of thermal spray technology, 2000-12, Vol.9 (4), p.483-487

2000

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Schottky barrier heights of In 0.5(Al xGa 1− x) 0.5P (0≤ x≤1) lattice matched to GaAs

Solid-state electronics, 1998, Vol.42 (6), p.1045-1048

1998

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Schottky barrier heights of In0.5(AlxGa1−x)0.5P (0≤x≤1) lattice matched to GaAs

Solid-state electronics, 1998-06, Vol.42 (6), p.1045-1048

1998

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Interface optimization of [formula omitted] multiple quantum wells grown by gas source molecular beam epitaxy

Journal of crystal growth, 1996-02, Vol.158 (4), p.393-398

1996

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Large array of GaAs modulators and detectors flip-chip solder bonded to silicon CMOS using InGaP as the selective etch stop for GaAs substrate removal

Journal of crystal growth, 1997-05, Vol.175, p.971-976

1997

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Twinning in epilayers of CdTe on Si: Influence of ZnTe buffer layer and substrate misorientation

MRS proceedings, 1995, Vol.399, Article 479

1995

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Growth of MnS, Cd1-xMnxSe, and MnS1-xSex Films by Molecular Beam Epitaxy (MBE) and Elemental Vapor Transport Epitaxy (EVTE) Techniques

MRS proceedings, 1993, Vol.326, Article 305

1993

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X-Ray Topographic Methods for Stress-Strain Tensor Analyses of Crystals

MRS proceedings, 1986, Vol.82, Article 221

1986

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Elucidation of Deformation and Recovery Mechanism in Nickel-Base Alloy 600 by X-Ray Rocking Curve Measurements

Materials science forum, 1991-01, Vol.79-82, p.539-544

1991

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Transformation-assisted consolidation of bulk nanocrystalline TiO 2

Nanostructured materials, 1999, Vol.11 (4), p.553-557

1999

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Retention of nanoscale grain size in bulk sintered materials via a pressure-induced phase transformation

Nanostructured materials, 1997, Vol.8 (6), p.645-656

1997

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The effect of high pressure on phase transformation of nanocrystalline TiO2 during hot-pressing

Nanostructured materials, 1995-03, Vol.5 (3), p.319-325

1995

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The effect of high pressure on phase transformation of nanocrystalline TiO 2 during hot-pressing

Nanostructured materials, 1995, Vol.5 (3), p.319-325

1995

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High efficiency In/sub 0.5/(Al/sub 0.3/Ga/sub 0.7/)/sub 0.5/P/In/sub 0.2/Ga/sub 0.8/As power HEMT for low supply voltage wireless communications

1997 55th Annual Device Research Conference Digest, 1997, p.70-71

1997

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IEEE_Xplore

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On the processing of nanocrystalline and nanocomposite ceramics

Theory of high pressure/low temperature sintering of bulk nanocrystalline TiO2

Thermal sprayed nanostructured WC/Co hardcoatings

In/sub 0.5/(Al/sub x/Ga/sub 1-x/)/sub 0.5/ HEMTs for high-efficiency low-voltage power amplifiers: design, fabrication, and device results

Single- and double-heterojunction pseudomorphic In/sub 0.5/(Al/sub 0.3/Ga/sub 0.7/)/sub 0.5/P/In/sub 0.2/Ga/sub 0.8/As high electron mobility transistors grown by gas source molecular beam epitaxy

High pressure/low temperature sintering of nanocrystalline alumina

Transformation-assisted consolidation of bulk nanocrystalline TiO2

On the Processing of Nanostructured Ceramics

Effect of structural defects and chemical impurities on hall mobilities in low pressure MOCVD grown GaN

Theory of high pressure/low temperature sintering of bulk nanocrystalline TiO 2

Arthroscopic synovectomy for recurrent hemarthrosis of the ankle in hemophilia

Plasma-Sprayed Nanostructured Al2O3/TiO2 Powders and Coatings

Schottky barrier heights of In 0.5(Al xGa 1− x) 0.5P (0≤ x≤1) lattice matched to GaAs

Schottky barrier heights of In0.5(AlxGa1−x)0.5P (0≤x≤1) lattice matched to GaAs

Interface optimization of [formula omitted] multiple quantum wells grown by gas source molecular beam epitaxy

Large array of GaAs modulators and detectors flip-chip solder bonded to silicon CMOS using InGaP as the selective etch stop for GaAs substrate removal

Twinning in epilayers of CdTe on Si: Influence of ZnTe buffer layer and substrate misorientation

Growth of MnS, Cd1-xMnxSe, and MnS1-xSex Films by Molecular Beam Epitaxy (MBE) and Elemental Vapor Transport Epitaxy (EVTE) Techniques

X-Ray Topographic Methods for Stress-Strain Tensor Analyses of Crystals

Elucidation of Deformation and Recovery Mechanism in Nickel-Base Alloy 600 by X-Ray Rocking Curve Measurements

Transformation-assisted consolidation of bulk nanocrystalline TiO 2

Retention of nanoscale grain size in bulk sintered materials via a pressure-induced phase transformation

The effect of high pressure on phase transformation of nanocrystalline TiO2 during hot-pressing

The effect of high pressure on phase transformation of nanocrystalline TiO 2 during hot-pressing

High efficiency In/sub 0.5/(Al/sub 0.3/Ga/sub 0.7/)/sub 0.5/P/In/sub 0.2/Ga/sub 0.8/As power HEMT for low supply voltage wireless communications

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