UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Measurements of the Thermal Resistivity of InAlAs, InGaAs, and InAlAs/InGaAs Superlattices

ACS applied materials & interfaces, 2019-03, Vol.11 (12), p.11970-11975

2019

Volltextzugriff (PDF)

Thermal imaging of buried heterostructure quantum cascade lasers (QCLs) and QCL arrays using CCD-based thermoreflectance microscopy

Journal of applied physics, 2019-01, Vol.125 (3)

2019

Volltextzugriff (PDF)

Highly efficient ∼8 μm-emitting, step-taper active-region quantum cascade lasers

AIP advances, 2021-02, Vol.11 (2), p.025004-025004-6

2021

Volltextzugriff (PDF)

InGaAs/AlInAs strain-compensated Superlattices grown on metamorphic buffer layers for low-strain, 3.6μm-emitting quantum-cascade-laser active regions

Journal of crystal growth, 2013-05, Vol.370, p.230-235

2013

Volltextzugriff (PDF)

Impact of growth temperature and substrate orientation on dilute-nitride-antimonide materials grown by MOVPE for multi-junction solar cell application

Journal of crystal growth, 2014-11, Vol.405, p.87-91

2014

Volltextzugriff (PDF)

Properties of ‘bulk’ GaAsSbN/GaAs for multi-junction solar cell application: Reduction of carbon background concentration

Journal of crystal growth, 2014-05, Vol.393, p.70-74

2014

Volltextzugriff (PDF)

Analysis of interface roughness in strained InGaAs/AlInAs quantum cascade laser structures (λ ∼ 4.6 μm) by atom probe tomography

Journal of crystal growth, 2022-04, Vol.583, p.126531, Article 126531

2022

Volltextzugriff (PDF)

Characteristics of bulk InGaAsSbN/GaAs grown by metalorganic vapor phase epitaxy (MOVPE)

Journal of crystal growth, 2013-05, Vol.370, p.163-167

2013

Volltextzugriff (PDF)

Narrow band gap GaInNAsSb material grown by metal organic vapor phase epitaxy (MOVPE) for solar cell applications

Journal of crystal growth, 2011-01, Vol.315 (1), p.68-73

2011

Volltextzugriff (PDF)

Carrier leakage via interface-roughness scattering bridges gap between theoretical and experimental internal efficiencies of quantum cascade lasers

Applied physics letters, 2020-08, Vol.117 (5)

2020

Volltextzugriff (PDF)

8.1 μm-emitting InP-based quantum cascade laser grown on Si by metalorganic chemical vapor deposition

Applied physics letters, 2023-07, Vol.123 (3)

2023

Volltextzugriff (PDF)

Large-scale data generation for quantum cascade laser active-region design with automated wavefunction identification

Applied physics letters, 2024-06, Vol.124 (24)

2024

Volltextzugriff (PDF)

Design and characterization of strained InGaAs/GaAsSb type-II 'W' quantum wells on InP substrates for mid-IR emission

Journal of physics. D, Applied physics, 2009-01, Vol.42 (2), p.025108-025108 (8)

2009

Volltextzugriff (PDF)

Incoherent-to-coherent crossover in thermal transport through III–V alloy superlattices

Applied physics letters, 2022-12, Vol.121 (23)

2022

Volltextzugriff (PDF)

8.5 μm-emitting InP-based quantum cascade lasers grown on GaAs by metal-organic chemical vapor deposition

Applied physics letters, 2022-10, Vol.121 (17)

2022

Volltextzugriff (PDF)

5.5 W near-diffraction-limited power from resonant leaky-wave coupled phase-locked arrays of quantum cascade lasers

Applied physics letters, 2015-02, Vol.106 (6)

2015

Volltextzugriff (PDF)

High-power, surface-emitting quantum cascade laser operating in a symmetric grating mode

Applied physics letters, 2016-03, Vol.108 (12)

2016

Volltextzugriff (PDF)

Design for high-power, single-lobe, grating-surface-emitting quantum cascade lasers enabled by plasmon-enhanced absorption of antisymmetric modes

Applied physics letters, 2014-03, Vol.104 (13)

2014

Volltextzugriff (PDF)

Interband Mid-IR Semiconductor Lasers

IEEE photonics journal, 2010-04, Vol.2 (2), p.213-216

Mawst, L J

2010

Volltextzugriff (PDF)

Erratum: “Carrier leakage via interface-roughness scattering bridges gap between theoretical and experimental internal efficiencies of quantum cascade lasers” [Appl. Phys. Lett. 117, 051101 (2020)]

Applied physics letters, 2020-09, Vol.117 (10)

2020

Volltextzugriff (PDF)

Two-dimensional phase-locked antiguided vertical-cavity surface-emitting laser arrays

Applied physics letters, 2000-10, Vol.77 (15), p.2307-2309

2000

Volltextzugriff (PDF)

Selective MOCVD growth of single-crystal dense GaAs quantum dot array using cylinder-forming diblock copolymers

Journal of crystal growth, 2006-12, Vol.297 (2), p.283-288

2006

Volltextzugriff (PDF)

Electrically injected 1.64µm emitting In0.65Ga0.35As 3-QW laser diodes grown on mismatched substrates by MOVPE

Optics express, 2019-11, Vol.27 (23), p.33205-33216

2019

Volltextzugriff (PDF)

MOCVD-Grown Dilute Nitride Type II Quantum Wells

IEEE journal of selected topics in quantum electronics, 2008-07, Vol.14 (4), p.979-991

2008

Volltextzugriff (PDF)

Modal properties of two-dimensional antiguided vertical-cavity surface-emitting laser arrays

IEEE journal of quantum electronics, 2002-06, Vol.38 (6), p.652-664

2002

Volltextzugriff (PDF)

1 – 25 von 359

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(250)
Mit Volltextzugriff
(303)

Publikationsform

Sprache

Englisch
(348)
Japanisch
(37)
Russisch
(3)

Erscheinungsjahr

n.n

Thema

Science & Technology
(228)
Physics
(208)
Physical Sciences
(207)
Physics, Applied
(172)
Optics
(134)
Technology
(132)
Engineering
(118)
Engineering, Electrical & Electronic
(99)
Lasers
(92)
Exact Sciences And Technology
(91)
Semiconductor Lasers
(57)
Fundamental Areas Of Phenomenology
(55)
Semiconductor Lasers; Laser Diodes
(49)
Materials Science
(44)
Diode Lasers
(42)
Quantum Cascade Lasers
(42)
Gallium Arsenide
(41)
Materials Science, Multidisciplinary
(39)
Chemical Vapor Deposition
(32)
Crystallography
(29)

15 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

Measurements of the Thermal Resistivity of InAlAs, InGaAs, and InAlAs/InGaAs Superlattices

Thermal imaging of buried heterostructure quantum cascade lasers (QCLs) and QCL arrays using CCD-based thermoreflectance microscopy

Highly efficient ∼8 μm-emitting, step-taper active-region quantum cascade lasers

InGaAs/AlInAs strain-compensated Superlattices grown on metamorphic buffer layers for low-strain, 3.6μm-emitting quantum-cascade-laser active regions

Impact of growth temperature and substrate orientation on dilute-nitride-antimonide materials grown by MOVPE for multi-junction solar cell application

Properties of ‘bulk’ GaAsSbN/GaAs for multi-junction solar cell application: Reduction of carbon background concentration

Analysis of interface roughness in strained InGaAs/AlInAs quantum cascade laser structures (λ ∼ 4.6 μm) by atom probe tomography

Characteristics of bulk InGaAsSbN/GaAs grown by metalorganic vapor phase epitaxy (MOVPE)

Narrow band gap GaInNAsSb material grown by metal organic vapor phase epitaxy (MOVPE) for solar cell applications

Carrier leakage via interface-roughness scattering bridges gap between theoretical and experimental internal efficiencies of quantum cascade lasers

8.1 μm-emitting InP-based quantum cascade laser grown on Si by metalorganic chemical vapor deposition

Large-scale data generation for quantum cascade laser active-region design with automated wavefunction identification

Design and characterization of strained InGaAs/GaAsSb type-II 'W' quantum wells on InP substrates for mid-IR emission

Incoherent-to-coherent crossover in thermal transport through III–V alloy superlattices

8.5 μm-emitting InP-based quantum cascade lasers grown on GaAs by metal-organic chemical vapor deposition

5.5 W near-diffraction-limited power from resonant leaky-wave coupled phase-locked arrays of quantum cascade lasers

High-power, surface-emitting quantum cascade laser operating in a symmetric grating mode

Design for high-power, single-lobe, grating-surface-emitting quantum cascade lasers enabled by plasmon-enhanced absorption of antisymmetric modes

Interband Mid-IR Semiconductor Lasers

Erratum: “Carrier leakage via interface-roughness scattering bridges gap between theoretical and experimental internal efficiencies of quantum cascade lasers” [Appl. Phys. Lett. 117, 051101 (2020)]

Two-dimensional phase-locked antiguided vertical-cavity surface-emitting laser arrays

Selective MOCVD growth of single-crystal dense GaAs quantum dot array using cylinder-forming diblock copolymers

Electrically injected 1.64µm emitting In0.65Ga0.35As 3-QW laser diodes grown on mismatched substrates by MOVPE

MOCVD-Grown Dilute Nitride Type II Quantum Wells

Modal properties of two-dimensional antiguided vertical-cavity surface-emitting laser arrays

Suchergebnisse filtern