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A Lifetime Estimation Technique for Voltage Source Inverters

IEEE transactions on power electronics, 2013-08, Vol.28 (8), p.4113-4119

2013

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Comparative Study of RESURF Si/SiC LDMOSFETs for High-Temperature Applications Using TCAD Modeling

IEEE transactions on electron devices, 2017-09, Vol.64 (9), p.3713-3718

2017

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High-Temperature (1200–1400°C) Dry Oxidation of 3C-SiC on Silicon

Journal of electronic materials, 2015-11, Vol.44 (11), p.4167-4174

2015

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A Fast Loss and Temperature Simulation Method for Power Converters, Part II: 3-D Thermal Model of Power Module

IEEE transactions on power electronics, 2012-01, Vol.27 (1), p.258-268

2012

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A Compact Trench-Assisted Space-Modulated JTE Design for High-Voltage 4H-SiC Devices

IEEE transactions on electron devices, 2021-03, Vol.68 (3), p.1162-1167

2021

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The improvement of Mo/4H-SiC Schottky diodes via a P2O5 surface passivation treatment

Journal of applied physics, 2020-01, Vol.127 (2)

2020

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Optimization of 1700-V 4H-SiC Superjunction Schottky Rectifiers With Implanted P-Pillars for Practical Realization

IEEE transactions on electron devices, 2021-07, Vol.68 (7), p.3497-3504, Article 3497

2021

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Optimization of 1700-V 4H-SiC Semi-Superjunction Schottky Rectifiers With Implanted P-Pillars for Practical Realization

IEEE transactions on electron devices, 2022-04, Vol.69 (4), p.1924-1930

2022

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Modelling of current sharing in paralleled current limiting superjunction MOSFETs with common gate drives

Microelectronics and reliability, 2012-03, Vol.52 (3), p.497-502

2012

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Initial investigations into the MOS interface of freestanding 3C-SiC layers for device applications

Semiconductor science and technology, 2021-05, Vol.36 (5), p.55006

2021

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Field-effect mobility temperature modeling of 4H-SiC metal-oxide-semiconductor transistors

Journal of applied physics, 2006-12, Vol.100 (11)

2006

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SiC MOSFETs with thermally oxidized Ta2Si stacked on SiO2 as high-k gate insulator

Microelectronic engineering, 2008-04, Vol.85 (4), p.704-709

2008

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Measurement and modelling of power electronic devices at cryogenic temperatures

IET circuits, devices & systems, 2006-10, Vol.153 (5), p.407-415

2006

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Characterization and modeling of n-n Si∕SiC heterojunction diodes

Journal of applied physics, 2007-07, Vol.102 (1)

2007

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Interfacial properties of thermally oxidized Ta2Si on Si

Surface and interface analysis, 2008-08, Vol.40 (8), p.1164-1167

2008

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Comparative surface studies on wet and dry sacrificial thermal oxidation on silicon carbide

Applied surface science, 2001-04, Vol.174 (3), p.210-216

2001

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Simulations of a Lateral PiN Diode on Si/SiC Substrate for High Temperature Applications

Materials science forum, 2015-06, Vol.821-823, p.624-627

2015

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Fabrication of 3C-SiC MOS Capacitors Using High-Temperature Oxidation

Materials science forum, 2015-06, Vol.821-823, p.464-467

2015

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A study of temperature-related non-linearity at the metal-silicon interface

Journal of applied physics, 2012-12, Vol.112 (11)

2012

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Study of dual-valley transport across a multiquantum barrier to enhance carrier confinement

Applied surface science, 2004-07, Vol.234 (1-4), p.434-438

2004

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Analysis of inhomogeneous Ge/SiC heterojunction diodes

Journal of applied physics, 2009-11, Vol.106 (9), p.093708-093708-7

2009

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Study of 4H–SiC trench MOSFET structures

Solid-state electronics, 2005-07, Vol.49 (7), p.1081-1085

2005

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Highly effective junction isolation structures for PICs based on standard CMOS Process

IEEE transactions on electron devices, 2004-07, Vol.51 (7), p.1178-1184

2004

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Si/SiC bonded wafer: A route to carbon free SiO2 on SiC

Applied physics letters, 2009-03, Vol.94 (10)

2009

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Creating room temperature Ohmic contacts to 4H–SiC: studied by specific contact resistance measurements and X-ray photoelectron spectroscopy

Surface science, 2004-12, Vol.573 (2), p.253-263

2004

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A Lifetime Estimation Technique for Voltage Source Inverters

Comparative Study of RESURF Si/SiC LDMOSFETs for High-Temperature Applications Using TCAD Modeling

High-Temperature (1200–1400°C) Dry Oxidation of 3C-SiC on Silicon

A Fast Loss and Temperature Simulation Method for Power Converters, Part II: 3-D Thermal Model of Power Module

A Compact Trench-Assisted Space-Modulated JTE Design for High-Voltage 4H-SiC Devices

The improvement of Mo/4H-SiC Schottky diodes via a P2O5 surface passivation treatment

Optimization of 1700-V 4H-SiC Superjunction Schottky Rectifiers With Implanted P-Pillars for Practical Realization

Optimization of 1700-V 4H-SiC Semi-Superjunction Schottky Rectifiers With Implanted P-Pillars for Practical Realization

Modelling of current sharing in paralleled current limiting superjunction MOSFETs with common gate drives

Initial investigations into the MOS interface of freestanding 3C-SiC layers for device applications

Field-effect mobility temperature modeling of 4H-SiC metal-oxide-semiconductor transistors

SiC MOSFETs with thermally oxidized Ta2Si stacked on SiO2 as high-k gate insulator

Measurement and modelling of power electronic devices at cryogenic temperatures

Characterization and modeling of n-n Si∕SiC heterojunction diodes

Interfacial properties of thermally oxidized Ta2Si on Si

Comparative surface studies on wet and dry sacrificial thermal oxidation on silicon carbide

Simulations of a Lateral PiN Diode on Si/SiC Substrate for High Temperature Applications

Fabrication of 3C-SiC MOS Capacitors Using High-Temperature Oxidation

A study of temperature-related non-linearity at the metal-silicon interface

Study of dual-valley transport across a multiquantum barrier to enhance carrier confinement

Analysis of inhomogeneous Ge/SiC heterojunction diodes

Study of 4H–SiC trench MOSFET structures

Highly effective junction isolation structures for PICs based on standard CMOS Process

Si/SiC bonded wafer: A route to carbon free SiO2 on SiC

Creating room temperature Ohmic contacts to 4H–SiC: studied by specific contact resistance measurements and X-ray photoelectron spectroscopy

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