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AlGaAsSb superlattice buffer layer for p-channel GaSb quantum well on GaAs substrate

Journal of crystal growth, 2011-05, Vol.323 (1), p.35-38

2011

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X-ray reflectometry analyses of chromium thin films

Thin solid films, 2006-12, Vol.515 (4), p.1286-1293

2006

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Effect of interface roughness on performance of AlGaAs/InGaAs/GaAs resonant tunneling diodes

Journal of crystal growth, 1998-12, Vol.195 (1), p.617-623

1998

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The international VAMAS project on X-ray reflectivity measurements for evaluation of thin films and multilayers — Preliminary results from the second round-robin

Thin solid films, 2008-09, Vol.516 (22), p.7962-7966

2008

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Millimeter-wave power operation of an AlGaAs/InGaAs/GaAs quantum well MISFET

IEEE transactions on electron devices, 1989-10, Vol.36 (10), p.2236-2242

1989

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IEEE_Xplore

"Reproducability in X-Ray reflectometry : results from the first reflectivity round robin"

Journal of applied crystallography, 2008, Vol.41, p.143-15

2008

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Development of a glass-bonded compliant substrate

Journal of crystal growth, 1998-12, Vol.195 (1), p.144-150

1998

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Electron mobility and lifetime mapping of CZT with known crystalline defects by pulsed laser excitation

2009 IEEE Nuclear Science Symposium Conference Record (NSS/MIC), 2009, p.1658-1665

2009

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IEEE_Xplore

Particle Size, Particle Size Distribution, and Related Measurements of Supported Metal Catalysts

Catalysis reviews. Science and engineering, 1987-02, Vol.29 (1), p.41-99

1987

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Characterization of ultra-shallow p + -n junctions formed by plasma doping with BF 3 and N 2 plasmas

Materials chemistry and physics, 1998, Vol.54 (1), p.37-43

1998

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Characterization of ultra-shallow p+-n junctions formed by plasma doping with BF3 and N2 plasmas

Materials chemistry and physics, 1998-07, Vol.54 (1-3), p.37-43

1998

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Field ion specimen preparation from near-surface regions

Ultramicroscopy, 1998-06, Vol.73 (1), p.273-278

1998

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Fundamental issues in heteroepitaxy---A Department of Energy, Council on Materials Science Panel Report

Journal of materials research, 1990-04, Vol.5:4

1990

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Boron doping of silicon by plasma source ion implantation

Surface & coatings technology, 1997-09, Vol.93 (2), p.247-253

1997

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Effect of the Extinction Distance in X-Ray Rocking Curve Analyses of II-VI Compounds

MRS proceedings, 1990, Vol.209, Article 463

1990

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Selected area heteroepitaxial growth of GaAs on silicon for advanced device structures

Thin solid films, 1989-12, Vol.181 (1), p.213-225

1989

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Structural analysis of as-deposited and annealed low-temperature gallium arsenide

Journal of crystal growth, 1993-04, Vol.129 (3-4), p.719-727

1993

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Pseudomorphic bipolar quantum resonant-tunneling transistor

IEEE transactions on electron devices, 1989-10, Vol.36 (10), p.2328-2334

1989

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IEEE_Xplore

Co-integration of GaAs MESFET and Si CMOS circuits

IEEE electron device letters, 1988-09, Vol.9 (9), p.444-446

1988

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IEEE_Xplore

Structural Analysis of Silicon Doped by Plasma Source Ion Implantation

MRS proceedings, 1993, Vol.316, Article 1017

1993

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Stability of GaAs/Si Superlattices During MBE Growth and Post-Growth Annealing

MRS proceedings, 1993, Vol.326, Article 133

1993

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AlGaAs/InGaAs/GaAs quantum-well power MISFET at millimeter-wave frequencies

IEEE electron device letters, 1988-11, Vol.9 (11), p.610-612

1988

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IEEE_Xplore

A New Parametric Method for the Analysis of Ordering Configurations in Binary Alloys

MRS proceedings, 1992, Vol.278, Article 377

1992

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Electrochemical C-V profiling of heterojunction device structures

IEEE transactions on electron devices, 1989-02, Vol.36 (2), p.309-313

1989

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IEEE_Xplore

Mössbauer spectroscopy observations of local temperature rises in a silica-supported iron catalyst

Journal of catalysis, 1985, Vol.91 (2), p.185-196

1985

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AlGaAsSb superlattice buffer layer for p-channel GaSb quantum well on GaAs substrate

X-ray reflectometry analyses of chromium thin films

Effect of interface roughness on performance of AlGaAs/InGaAs/GaAs resonant tunneling diodes

The international VAMAS project on X-ray reflectivity measurements for evaluation of thin films and multilayers — Preliminary results from the second round-robin

Millimeter-wave power operation of an AlGaAs/InGaAs/GaAs quantum well MISFET

"Reproducability in X-Ray reflectometry : results from the first reflectivity round robin"

Development of a glass-bonded compliant substrate

Electron mobility and lifetime mapping of CZT with known crystalline defects by pulsed laser excitation

Particle Size, Particle Size Distribution, and Related Measurements of Supported Metal Catalysts

Characterization of ultra-shallow p + -n junctions formed by plasma doping with BF 3 and N 2 plasmas

Characterization of ultra-shallow p+-n junctions formed by plasma doping with BF3 and N2 plasmas

Field ion specimen preparation from near-surface regions

Fundamental issues in heteroepitaxy---A Department of Energy, Council on Materials Science Panel Report

Boron doping of silicon by plasma source ion implantation

Effect of the Extinction Distance in X-Ray Rocking Curve Analyses of II-VI Compounds

Selected area heteroepitaxial growth of GaAs on silicon for advanced device structures

Structural analysis of as-deposited and annealed low-temperature gallium arsenide

Pseudomorphic bipolar quantum resonant-tunneling transistor

Co-integration of GaAs MESFET and Si CMOS circuits

Structural Analysis of Silicon Doped by Plasma Source Ion Implantation

Stability of GaAs/Si Superlattices During MBE Growth and Post-Growth Annealing

AlGaAs/InGaAs/GaAs quantum-well power MISFET at millimeter-wave frequencies

A New Parametric Method for the Analysis of Ordering Configurations in Binary Alloys

Electrochemical C-V profiling of heterojunction device structures

Mössbauer spectroscopy observations of local temperature rises in a silica-supported iron catalyst

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