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AlGaAsSb superlattice buffer layer for p-channel GaSb quantum well on GaAs substrate

Journal of crystal growth, 2011-05, Vol.323 (1), p.35-38

2011

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Modified statistical dynamical diffraction theory: analysis of model SiGe heterostructures

Journal of applied crystallography, 2013-08, Vol.46 (4), p.912-918

2013

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Reproducibility in X-ray reflectometry: results from the first world-wide round-robin experiment

Journal of applied crystallography, 2008-02, Vol.41 (1), p.143-152

2008

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X-ray reflectometry analyses of chromium thin films

Thin solid films, 2006-12, Vol.515 (4), p.1286-1293

2006

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Observation of discrete electronic states in a zero-dimensional semiconductor nanostructure

Physical review letters, 1988-02, Vol.60 (6), p.535-537

1988

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High resolution X-ray diffraction analyses of ion-implanted GaN/AlN/Si heterostructures

Physica status solidi. A, Applications and materials science, 2007-08, Vol.204 (8), p.2598-2605

2007

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Implementation of statistical dynamic diffraction theory for defective semiconductor heterostructure modelling

Journal of applied crystallography, 2010-06, Vol.43 (3), p.550-559

2010

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Application of statistical dynamical diffraction theory to highly defective ion implanted SiGe heterostructures

Physica status solidi. A, Applications and materials science, 2011-11, Vol.208 (11), p.2533-2538

2011

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The international VAMAS project on X-ray reflectivity measurements for evaluation of thin films and multilayers — Preliminary results from the second round-robin

Thin solid films, 2008-09, Vol.516 (22), p.7962-7966

2008

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Triple-axis x-ray diffraction analyses of hen egg-white lysozyme crystals

Journal of physics. D, Applied physics, 2001-05, Vol.34 (10A), p.A64-A69

2001

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Spin splitting of single 0D impurity states in semiconductor heterostructure Quantum Wells

Physical review letters, 1996-02, Vol.76 (8), p.1328-1331

1996

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Particle Size, Particle Size Distribution, and Related Measurements of Supported Metal Catalysts

Catalysis reviews. Science and engineering, 1987-02, Vol.29 (1), p.41-99

1987

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High-resolution X-ray diffraction analyses of protein crystals

Philosophical transactions of the Royal Society of London. Series A: Mathematical, physical, and engineering sciences, 1999-10, Vol.357 (1761), p.2789-2799

1999

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Realization of a three-terminal resonant tunneling device: the bipolar quantum resonant tunneling transistor

Applied physics letters, 1989-03, Vol.54 (11), p.1034-1036

1989

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Development of a glass-bonded compliant substrate

Journal of crystal growth, 1998-12, Vol.195 (1), p.144-150

1998

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Application Of Statistical Dynamical X-ray Diffraction Theory To Defective Semiconductor Heterostructures

2009 International Conference on Frontiers of Characterization and Metrology for Nanoelectronics, 2009, Vol.1173, p.385-389

2009

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High resolution x-ray diffraction analyses of GaN/LiGaO2

Journal of physics. D, Applied physics, 1999-05, Vol.32, p.A61

1999

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Defect reduction by thermal annealing of GaAs layers grown by molecular beam epitaxy on Si substrates

Applied physics letters, 1987-01, Vol.50 (1), p.31-33

1987

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Generation of misfit dislocations in GaAs grown on Si

Applied physics letters, 1989-07, Vol.55 (3), p.265-267

1989

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Diffusion activation energy of cadmium in thin film CuInGaSe2

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC), 2013, p.1836-1841

2013

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Realization and Characterization of Ultrathin GaAs‐on‐Insulator Structures

Journal of the Electrochemical Society, 1999-09, Vol.146 (9), p.3506-3509

1999

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Effect of interface roughness on performance of AlGaAs/InGaAs/GaAs resonant tunneling diodes

Journal of crystal growth, 1998-12, Vol.195 (1), p.617-623

1998

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Diffractometer Noise Characteristics: Experimental Determination and Application to Statistical Rocking-Curve Analysis

Journal of applied crystallography, 1998-04, Vol.31 (2), p.185-197

1998

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Triple crystal x-ray diffraction analysis of chemical-mechanical polished gallium arsenide

Journal of applied physics, 1992-12, Vol.72 (11), p.5158-5164

1992

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Field ion specimen preparation from near-surface regions

Ultramicroscopy, 1998-06, Vol.73 (1), p.273-278

1998

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AlGaAsSb superlattice buffer layer for p-channel GaSb quantum well on GaAs substrate

Modified statistical dynamical diffraction theory: analysis of model SiGe heterostructures

Reproducibility in X-ray reflectometry: results from the first world-wide round-robin experiment

X-ray reflectometry analyses of chromium thin films

Observation of discrete electronic states in a zero-dimensional semiconductor nanostructure

High resolution X-ray diffraction analyses of ion-implanted GaN/AlN/Si heterostructures

Implementation of statistical dynamic diffraction theory for defective semiconductor heterostructure modelling

Application of statistical dynamical diffraction theory to highly defective ion implanted SiGe heterostructures

The international VAMAS project on X-ray reflectivity measurements for evaluation of thin films and multilayers — Preliminary results from the second round-robin

Triple-axis x-ray diffraction analyses of hen egg-white lysozyme crystals

Spin splitting of single 0D impurity states in semiconductor heterostructure Quantum Wells

Particle Size, Particle Size Distribution, and Related Measurements of Supported Metal Catalysts

High-resolution X-ray diffraction analyses of protein crystals

Realization of a three-terminal resonant tunneling device: the bipolar quantum resonant tunneling transistor

Development of a glass-bonded compliant substrate

Application Of Statistical Dynamical X-ray Diffraction Theory To Defective Semiconductor Heterostructures

High resolution x-ray diffraction analyses of GaN/LiGaO2

Defect reduction by thermal annealing of GaAs layers grown by molecular beam epitaxy on Si substrates

Generation of misfit dislocations in GaAs grown on Si

Diffusion activation energy of cadmium in thin film CuInGaSe2

Realization and Characterization of Ultrathin GaAs‐on‐Insulator Structures

Effect of interface roughness on performance of AlGaAs/InGaAs/GaAs resonant tunneling diodes

Diffractometer Noise Characteristics: Experimental Determination and Application to Statistical Rocking-Curve Analysis

Triple crystal x-ray diffraction analysis of chemical-mechanical polished gallium arsenide

Field ion specimen preparation from near-surface regions

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