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Impact of vacancies and impurities on ferroelectricity in PVD- and ALD-grown HfO2 films

Applied physics letters, 2021-01, Vol.118 (3)

2021

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Origin of the retention loss in ferroelectric Hf0.5Zr0.5O2-based memory devices

Acta materialia, 2021-02, Vol.204, p.116515, Article 116515

2021

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Effect of Polarization Reversal in Ferroelectric TiN/Hf0.5Zr0.5O2/TiN Devices on Electronic Conditions at Interfaces Studied in Operando by Hard X‑ray Photoemission Spectroscopy

ACS applied materials & interfaces, 2017-12, Vol.9 (49), p.43370-43376

2017

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On-Chip TaOx-Based Non-volatile Resistive Memory for in vitro Neurointerfaces

Frontiers in neuroscience, 2020-02, Vol.14

2020

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Trap‐Assisted Memristive Switching in HfO2‐Based Devices Studied by In Situ Soft and Hard X‐Ray Photoelectron Spectroscopy

Advanced electronic materials, 2023-06, Vol.9 (6), p.n/a

2023

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Momentum-resolved electronic structure and band offsets in an epitaxial NbN/GaN superconductor/semiconductor heterojunction

Science advances, 2021-12, Vol.7 (52), p.eabi5833-eabi5833

2021

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Ferroelectric Second-Order Memristor

ACS applied materials & interfaces, 2019-09, Vol.11 (35), p.32108-32114

2019

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Automated Testing Algorithm for the Improvement of 1T1R ReRAM Endurance

IEEE transactions on electron devices, 2021-10, Vol.68 (10), p.4891-4896

2021

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IEEE_Xplore

Magnetoelectric Coupling at the Ni/Hf0.5Zr0.5O2 Interface

ACS nano, 2021-09, Vol.15 (9), p.14891-14902

2021

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Crossbar Nanoscale HfO2-Based Electronic Synapses

Nanoscale research letters, 2016-12, Vol.11 (1), p.147-147, Article 147

2016

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Chemical Stability of IrO2 Top Electrodes in Ferroelectric Hf0.5Zr0.5O2‐Based Metal–Insulator–Metal Structures: The Impact of Annealing Gas

Physica status solidi. PSS-RRL. Rapid research letters, 2021-05, Vol.15 (5), p.n/a

2021

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From Doping to Dilution: Local Chemistry and Collective Interactions of La in HfO2

Physica status solidi. PSS-RRL. Rapid research letters, 2022-10, Vol.16 (10), p.n/a

2022

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Enhanced Ferroelectric Polarization in TiN/HfO2/TiN Capacitors by Interface Design

ACS applied electronic materials, 2020-10, Vol.2 (10), p.3152-3159

2020

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From Doping to Dilution: Local Chemistry and Collective Interactions of La in HfO 2

Physica status solidi. PSS-RRL. Rapid research letters, 2022-10, Vol.16 (10)

2022

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Chemical Stability of IrO 2 Top Electrodes in Ferroelectric Hf 0.5 Zr 0.5 O 2 ‐Based Metal–Insulator–Metal Structures: The Impact of Annealing Gas

Physica status solidi. PSS-RRL. Rapid research letters, 2021-05, Vol.15 (5)

2021

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Rapid Research Letters

Physica status solidi. PSS-RRL. Rapid research letters, 2021-05, Vol.15 (5)

2021

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Magnetoelectric Coupling at the Ni/Hf 0.5 Zr 0.5 O 2 Interface

ACS nano, 2021-09, Vol.15 (9), p.14891-14902

2021

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Polarization-dependent electric potential distribution across nanoscale ferroelectric Hf0.5Zr0.5O2 in functional memory capacitors

Nanoscale, 2019-11, Vol.11 (42), p.19814-19822

2019

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On-Chip TaO x -Based Non-volatile Resistive Memory for in vitro Neurointerfaces

Frontiers in neuroscience, 2020, Vol.14, p.94-94

2020

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Effect of Polarization Reversal in Ferroelectric TiN/Hf 0.5 Zr 0.5 O 2 /TiN Devices on Electronic Conditions at Interfaces Studied in Operando by Hard X-ray Photoemission Spectroscopy

ACS applied materials & interfaces, 2017-12, Vol.9 (49), p.43370-43376

2017

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Polarization-dependent electric potential distribution across nanoscale ferroelectric HfZrO in functional memory capacitors

Nanoscale, 2019-10, Vol.11 (42), p.19814-19822

2019

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Polarization-dependent electric potential distribution across nanoscale ferroelectric Hf 0.5 Zr 0.5 O 2 in functional memory capacitors

Nanoscale, 2019-10, Vol.11 (42), p.19814-19822

2019

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Enhanced Ferroelectric Polarization in TiN/HfO 2 /TiN Capacitors by Interface Design

ACS applied electronic materials, 2020-10, Vol.2 (10), p.3152-3159

2020

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Trap‐Assisted Memristive Switching in HfO 2 ‐Based Devices Studied by In Situ Soft and Hard X‐Ray Photoelectron Spectroscopy

Advanced electronic materials, 2023-06, Vol.9 (6)

2023

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EuS/Hf 0.5 Zr 0.5 O 2 Bilayers as a Prospective Multiferroic System

Advanced materials interfaces, 2020-07, Vol.7 (14)

2020

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Impact of vacancies and impurities on ferroelectricity in PVD- and ALD-grown HfO2 films

Origin of the retention loss in ferroelectric Hf0.5Zr0.5O2-based memory devices

Effect of Polarization Reversal in Ferroelectric TiN/Hf0.5Zr0.5O2/TiN Devices on Electronic Conditions at Interfaces Studied in Operando by Hard X‑ray Photoemission Spectroscopy

On-Chip TaOx-Based Non-volatile Resistive Memory for in vitro Neurointerfaces

Trap‐Assisted Memristive Switching in HfO2‐Based Devices Studied by In Situ Soft and Hard X‐Ray Photoelectron Spectroscopy

Momentum-resolved electronic structure and band offsets in an epitaxial NbN/GaN superconductor/semiconductor heterojunction

Ferroelectric Second-Order Memristor

Automated Testing Algorithm for the Improvement of 1T1R ReRAM Endurance

Magnetoelectric Coupling at the Ni/Hf0.5Zr0.5O2 Interface

Crossbar Nanoscale HfO2-Based Electronic Synapses

Chemical Stability of IrO2 Top Electrodes in Ferroelectric Hf0.5Zr0.5O2‐Based Metal–Insulator–Metal Structures: The Impact of Annealing Gas

From Doping to Dilution: Local Chemistry and Collective Interactions of La in HfO2

Enhanced Ferroelectric Polarization in TiN/HfO2/TiN Capacitors by Interface Design

From Doping to Dilution: Local Chemistry and Collective Interactions of La in HfO 2

Chemical Stability of IrO 2 Top Electrodes in Ferroelectric Hf 0.5 Zr 0.5 O 2 ‐Based Metal–Insulator–Metal Structures: The Impact of Annealing Gas

Rapid Research Letters

Magnetoelectric Coupling at the Ni/Hf 0.5 Zr 0.5 O 2 Interface

Polarization-dependent electric potential distribution across nanoscale ferroelectric Hf0.5Zr0.5O2 in functional memory capacitors

On-Chip TaO x -Based Non-volatile Resistive Memory for in vitro Neurointerfaces

Effect of Polarization Reversal in Ferroelectric TiN/Hf 0.5 Zr 0.5 O 2 /TiN Devices on Electronic Conditions at Interfaces Studied in Operando by Hard X-ray Photoemission Spectroscopy

Polarization-dependent electric potential distribution across nanoscale ferroelectric HfZrO in functional memory capacitors

Polarization-dependent electric potential distribution across nanoscale ferroelectric Hf 0.5 Zr 0.5 O 2 in functional memory capacitors

Enhanced Ferroelectric Polarization in TiN/HfO 2 /TiN Capacitors by Interface Design

Trap‐Assisted Memristive Switching in HfO 2 ‐Based Devices Studied by In Situ Soft and Hard X‐Ray Photoelectron Spectroscopy

EuS/Hf 0.5 Zr 0.5 O 2 Bilayers as a Prospective Multiferroic System

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