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Effects of different plasma species (atomic N, metastable N2, and ions) on the optical properties of dilute nitride materials grown by plasma-assisted molecular-beam epitaxy
Applied physics letters, 2007-11, Vol.91 (19)
2007
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Effects of different plasma species (atomic N, metastable N 2 , and ions)on the optical properties of dilute nitride materials grownby plasma-assisted molecular-beam epitaxy
Applied physics letters, 2007-11, Vol.91 (19), p.191903-191903-3
2007
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Ion damage effects from negative deflector plate voltages during the plasma-assisted molecular-beam epitaxy growth of dilute nitrides
Applied physics letters, 2005-05, Vol.86 (22), p.221902-221902-3
2005
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Effects of different plasma species (atomic N, metastable N{sub 2}, and ions) on the optical properties of dilute nitride materials grown by plasma-assisted molecular-beam epitaxy
Applied physics letters, 2007-11, Vol.91 (19)
2007
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Construction of a variable aperture cell for source flux control in a molecular-beam epitaxy environment
Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2004-05, Vol.22 (3), p.735-738
2004
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Growth of GaNAs by molecular beam expitaxy using a N2/Ar rf plasma
Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2000-03, Vol.18 (2), p.461-464
2000
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Use of glovebags for less hazardous working conditions during the maintenance operations on molecular-beam epitaxy systems
Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2005-11, Vol.23 (6), p.1737-1739
2005
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Growth of GaNAs by molecular beam expitaxy using a N 2 /Ar rf plasma
Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2000-03, Vol.18 (2), p.461-464
2000
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Growth of GaNAs by molecular beam expitaxy using a N sub(2)/Ar rf plasma
Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2000-03, Vol.18 (2), p.461-464
2000
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Molecular-beam epitaxy growth of device-compatible GaAs on silicon substrates with thin (∼80nm) Si1−xGex step-graded buffer layers for high-κ III-V metal-oxide-semiconductor field effect transistor applications
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2007-05, Vol.25 (3), p.1098-1102
2007
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Molecular-beam epitaxy growth of device-compatible GaAs on silicon substrates with thin ( ∼ 80 nm ) Si 1 − x Ge x step-graded buffer layersfor high- κ III-V metal-oxide-semiconductor field effect transistor applications
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2007-05, Vol.25 (3), p.1098-1102
2007
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Molecular-beam epitaxy growth of device-compatible GaAs on silicon substrates with thin ( ∼ 80 nm ) Si 1 − x Ge x step-graded buffer layers for high- κ III-V metal-oxide-semiconductor field effect transistor applications
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2007-05, Vol.25 (3), p.1098-1102
2007
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Atomic force microscopy study of sapphire surfaces annealed with a H 2 O flux from a baffled molecular-beam epitaxy effusion cell loaded with Al ( O H ) 3
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2006-05, Vol.24 (3), p.1572-1576
2006
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Atomic force microscopy study of sapphire surfaces annealed with a H2O flux from a baffled molecular-beam epitaxy effusion cell loaded with Al(OH)3
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2006-05, Vol.24 (3), p.1572-1576
2006
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Effect of substrate temperature on molecular beam epitaxial GaAs growth using As2
Journal of applied physics, 1984-10, Vol.56 (8), p.2231-2235
1984
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Inert gas maintenance for molecular-beam epitaxy systems
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2005-05, Vol.23 (3), p.1257-1261
2005
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