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Impact of Random Dopant Fluctuation on Size-Dependence of Contact Resistance

Japanese Journal of Applied Physics, 2011-12, Vol.50 (12), p.124302-124302-4

Matsuzawa, Kazuya

2011

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Impact of Random Dopant Fluctuation on Size-Dependence of Contact Resistance

Japanese Journal of Applied Physics, 2011-12, Vol.50 (12R), p.124302

Matsuzawa, Kazuya

2011

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Charge-Coupling Extended-Gate Amorphous-InGaZnO-Based Thin-Film Transistor for Use as Ultrasensitive Biosensor

Journal of the Electrochemical Society, 2018, Vol.165 (13), p.B571-B575

2018

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Unified Transient and Frequency Domain Noise Simulation for Random Telegraph Noise and Flicker Noise Using a Physics-Based Model

IEEE transactions on electron devices, 2014-12, Vol.61 (12), p.4197-4203

2014

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Comprehensive studies on the accuracy of trap characterization by using advanced random telegraph noise simulator

Japanese Journal of Applied Physics, 2015-04, Vol.54 (4S), p.4-1-04DC14-5

2015

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Analytical Single-Electron Transistor (SET) Model for Design and Analysis of Realistic SET Circuits

Japanese Journal of Applied Physics, 2000-04, Vol.39 (4S), p.2321

2000

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Accurate Method of Measuring Specific Contact Resistivity of Interface between Silicide and Silicon and Its Application

Japanese Journal of Applied Physics, 2012-10, Vol.51 (10R), p.101302

2012

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On discrete random dopant modeling in drift-diffusion simulations: physical meaning of `atomistic' dopants

Microelectronics and reliability, 2002-02, Vol.42 (2), p.189-199

2002

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Unified Reaction--Diffusion Model for Accurate Prediction of Negative Bias Temperature Instability Effect

Japanese Journal of Applied Physics, 2012-02, Vol.51 (2), p.02BC07-02BC07-5

2012

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Modeling of NBTI Stress Induced Hole-Trapping and Interface-State-Generation Mechanisms under a Wide Range of Bias Conditions

IEICE transactions on electronics, 2013, Vol.E96.C (10), p.1339-1347

2013

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A New Design Scheme for Logic Circuits with Single Electron Transistors

Japanese Journal of Applied Physics, 1999-07, Vol.38 (7R), p.4027

1999

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Unified Reaction–Diffusion Model for Accurate Prediction of Negative Bias Temperature Instability Effect

Japanese Journal of Applied Physics, 2012-02, Vol.51 (2S), p.2

2012

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Enhancement of hot-electron generation rate in Schottky source metal–oxide–semiconductor field-effect transistors

Applied physics letters, 2000-06, Vol.76 (26), p.3992-3994

2000

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Simple technique for prediction of breakdown voltage of ultrathin gate insulator under ESD testing

2015 International Conference on IC Design & Technology (ICICDT), 2015, p.1-4

2015

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Effect of Carrier Transit Delay on Complementary Metal--Oxide--Semiconductor Switching Performance

Japanese Journal of Applied Physics, 2010-04, Vol.49 (4), p.04DC15-04DC15-4

2010

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Comprehensive Understanding of Electron and Hole Mobility Limited by Surface Roughness Scattering in Pure Oxides and Oxynitrides Based on Correlation Function of Surface Roughness

Japanese Journal of Applied Physics, 2002-04, Vol.41 (Part 1, No. 4B), p.2353-2358

2002

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Impact of Strained-Si Channel on Complementary Metal Oxide Semiconductor Circuit Performance under the Sub-100 nm Regime

Japanese Journal of Applied Physics, 2001-04, Vol.40 (4S), p.2627-2632

2001

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Non-Quasi-Static Carrier Dynamics of MOSFETs under Low-Voltage Operation

IEICE transactions on electronics, 2009, Vol.E92-C (5), p.608-615

2009

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Probability Distribution of Threshold Voltage Fluctuations in Metal-Oxide-Semiconductor Field-Effect-Transistors

Japanese Journal of Applied Physics, 2002-05, Vol.41 (Part 2, No. 5B), p.L552-L554

2002

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A unified simulation of Schottky and ohmic contacts

IEEE transactions on electron devices, 2000-01, Vol.47 (1), p.103-108

2000

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Current Fluctuation Characteristic of Sub-0.1 Micron Device Structures: A Monte Carlo Study

Japanese Journal of Applied Physics, 1999-05, Vol.38 (5A), p.L531

1999

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Influence of Thermal Noise on Drain Current in Very Small Si-MOSFETs

Japanese Journal of Applied Physics, 2000, Vol.39 (4S), p.1974-1978

2000

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Accurate Method of Measuring Specific Contact Resistivity of Interface between Silicide and Silicon and Its Application

Japanese Journal of Applied Physics, 2012-10, Vol.51 (10), p.101302-101302-9

2012

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Modeling of screening effect on remote Coulomb scattering due to gate impurities by nonuniform free carriers in poly-Si gate

Journal of applied physics, 2007-10, Vol.102 (7), p.073702-073702-18

2007

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Scaling effects on gate leakage current

IEEE transactions on electron devices, 2003-08, Vol.50 (8), p.1779-1784

2003

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Impact of Random Dopant Fluctuation on Size-Dependence of Contact Resistance

Impact of Random Dopant Fluctuation on Size-Dependence of Contact Resistance

Charge-Coupling Extended-Gate Amorphous-InGaZnO-Based Thin-Film Transistor for Use as Ultrasensitive Biosensor

Unified Transient and Frequency Domain Noise Simulation for Random Telegraph Noise and Flicker Noise Using a Physics-Based Model

Comprehensive studies on the accuracy of trap characterization by using advanced random telegraph noise simulator

Analytical Single-Electron Transistor (SET) Model for Design and Analysis of Realistic SET Circuits

Accurate Method of Measuring Specific Contact Resistivity of Interface between Silicide and Silicon and Its Application

On discrete random dopant modeling in drift-diffusion simulations: physical meaning of `atomistic' dopants

Unified Reaction--Diffusion Model for Accurate Prediction of Negative Bias Temperature Instability Effect

Modeling of NBTI Stress Induced Hole-Trapping and Interface-State-Generation Mechanisms under a Wide Range of Bias Conditions

A New Design Scheme for Logic Circuits with Single Electron Transistors

Unified Reaction–Diffusion Model for Accurate Prediction of Negative Bias Temperature Instability Effect

Enhancement of hot-electron generation rate in Schottky source metal–oxide–semiconductor field-effect transistors

Simple technique for prediction of breakdown voltage of ultrathin gate insulator under ESD testing

Effect of Carrier Transit Delay on Complementary Metal--Oxide--Semiconductor Switching Performance

Comprehensive Understanding of Electron and Hole Mobility Limited by Surface Roughness Scattering in Pure Oxides and Oxynitrides Based on Correlation Function of Surface Roughness

Impact of Strained-Si Channel on Complementary Metal Oxide Semiconductor Circuit Performance under the Sub-100 nm Regime

Non-Quasi-Static Carrier Dynamics of MOSFETs under Low-Voltage Operation

Probability Distribution of Threshold Voltage Fluctuations in Metal-Oxide-Semiconductor Field-Effect-Transistors

A unified simulation of Schottky and ohmic contacts

Current Fluctuation Characteristic of Sub-0.1 Micron Device Structures: A Monte Carlo Study

Influence of Thermal Noise on Drain Current in Very Small Si-MOSFETs

Accurate Method of Measuring Specific Contact Resistivity of Interface between Silicide and Silicon and Its Application

Modeling of screening effect on remote Coulomb scattering due to gate impurities by nonuniform free carriers in poly-Si gate

Scaling effects on gate leakage current

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