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1-Mbit 3-D DRAM Using a Monolithically Stacked Structure of a Si CMOS and Heterogeneous IGZO FETs

IEEE journal of the Electron Devices Society, 2024, Vol.12, p.236-242

2024

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High-performance single-crystalline In2O3 field effect transistor toward three-dimensional large-scale integration circuits

Communications materials, 2024-09, Vol.5 (1), p.184-11, Article 184

2024

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Effectiveness of c-Axis Aligned Crystalline IGZO FET as Selector Element and Ferroelectric Capacitor Scaling of 1T1C FeRAM

IEEE journal of the Electron Devices Society, 2023-01, Vol.11, p.1-1

2023

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Data Remanence Based Approach towards Stable Key Generation from Physically Unclonable Function Response of Embedded SRAMs using Binary Search

Journal of Advanced Research in Applied Sciences and Engineering Technology, 2024-05, Vol.35 (2), p.114-131

2024

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Prototyping of a CR-Type Ideal Integrator and DC Magnetic Properties

Denki Gakkai ronbunshi. A, Kiso zairyÅ, 2024-02, Vol.144 (2), p.72-80

2024

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Nonvolatile Memory With Extremely Low-Leakage Indium-Gallium-Zinc-Oxide Thin-Film Transistor

IEEE journal of solid-state circuits, 2012-09, Vol.47 (9), p.2258-2265

2012

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FPGA implementation of extreme learning machine system for classification

TENCON 2017 - 2017 IEEE Region 10 Conference, 2017, p.1868-1873

2017

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(Invited) Display and LSI Applications of Oxide Semiconductor LSIs (OS LSIs) Using Crystalline In–Ga–Zn Oxide (IGZO): Applications Related to Coronavirus COVID-19 Pandemic

ECS transactions, 2020-09, Vol.98 (7), p.185-204

2020

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10‐1: Layout of 1.50‐inch, 3207‐ppi OLED Display with OSLSI/SiLSI Structure Capable of Division Driving Fabricated through VLSI Process with Side‐by‐Side Patterning by Photolithography

SID International Symposium Digest of technical papers, 2022-06, Vol.53 (1), p.94-97

2022

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Embedded DRAM Using C-Axis-Aligned Crystalline In-Ga-Zn Oxide FET with 1.8V-Power-Supply Voltage

ECS transactions, 2019-04, Vol.90 (1), p.139-146

2019

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32‐3: 1.5‐inch, 3207‐ppi Side‐by‐Side OLED Display Capable of 32‐Division Driving with OSLSI/SiLSI Structure Fabricated by Photolithography

SID International Symposium Digest of technical papers, 2022-06, Vol.53 (1), p.384-387

2022

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A 16-level-cell memory with c-axis-aligned a-b-plane-anchored crystal In-Ga-Zn oxide FET using threshold voltage cancel write method

Japanese Journal of Applied Physics, 2016-04, Vol.55 (4S), p.4

2016

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12.2 Micro Short-Circuit Detector Including S/H Circuit for 1hr Retention and 52dB Comparator Composed of C-Axis Aligned Crystalline IGZO FETs for Li-Ion Battery Protection IC

2019 IEEE International Solid- State Circuits Conference - (ISSCC), 2019, p.204-206

2019

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Semi-Blind Channel Estimation for QAM-OFDM Systems

Proceedings of the ISCIE International Symposium on Stochastic Systems Theory and its Applications, 2014-05, Vol.2014, p.337-345

2014

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Fabrication of dynamic oxide semiconductor random access memory with 3.9 fF storage capacitance and greater than 1 h retention by using c-axis aligned crystalline oxide semiconductor transistor with L of 60 nm

Japanese Journal of Applied Physics, 2015-04, Vol.54 (4S), p.4-1-04DD07-5

2015

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(Invited) Multilevel Cell Nonvolatile Memory with Field-effect Transistor Using Crystalline Oxide Semiconductor

ECS transactions, 2014, Vol.64 (14), p.101-111

2014

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Evaluation of Machine Tool Operating State Estimation using Channel State Information

2024 IEEE/ACIS 22nd International Conference on Software Engineering Research, Management and Applications (SERA), 2024, p.377-382

2024

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Blind Channel Estimation for QAM-OFDM Systems

Journal of Signal Processing, 2014/03/15, Vol.18(2), pp.77-88

2014

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Blind Channel Estimation for QAM-OFDM Systems

Shingō shori, 2014-03, Vol.18 (2), p.77-88

2014

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State retention flip flop architectures with different tradeoffs using crystalline indium gallium zinc oxide transistors implemented in a 32-bit normally-off microprocessor

Japanese Journal of Applied Physics, 2014, Vol.53 (4S), p.4-1-04EE10-6

2014

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UHF RFCPUs on Flexible and Glass Substrates for Secure RFID Systems

IEEE journal of solid-state circuits, 2008-01, Vol.43 (1), p.292-299

2008

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Security as a Service for User Customized Data Protection

Software Engineering and Computer Systems, p.298-309

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16.9 A 128kb 4b/cell nonvolatile memory with crystalline In-Ga-Zn oxide FET using Vt, cancel write method

2015 IEEE International Solid-State Circuits Conference - (ISSCC) Digest of Technical Papers, 2015, p.1-3

2015

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Effects of Electrolyzed Acidic Functional Water for Denture Base Acrylics

Nihon Hotetsu Shika Gakkai Zasshi, 2006/10/10, Vol.50(4), pp.552-560

Matsuzaki, Takanori

2006

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Heterogeneous Oxide Semiconductor FETs Comprising Planar FET and Vertical Channel FETs Monolithically Stacked on Si CMOS, Enabling 1-Mbit 3D DRAM

2024 IEEE International Memory Workshop (IMW), 2024, p.1-4

2024

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1-Mbit 3-D DRAM Using a Monolithically Stacked Structure of a Si CMOS and Heterogeneous IGZO FETs

High-performance single-crystalline In2O3 field effect transistor toward three-dimensional large-scale integration circuits

Effectiveness of c-Axis Aligned Crystalline IGZO FET as Selector Element and Ferroelectric Capacitor Scaling of 1T1C FeRAM

Data Remanence Based Approach towards Stable Key Generation from Physically Unclonable Function Response of Embedded SRAMs using Binary Search

Prototyping of a CR-Type Ideal Integrator and DC Magnetic Properties

Nonvolatile Memory With Extremely Low-Leakage Indium-Gallium-Zinc-Oxide Thin-Film Transistor

FPGA implementation of extreme learning machine system for classification

(Invited) Display and LSI Applications of Oxide Semiconductor LSIs (OS LSIs) Using Crystalline In–Ga–Zn Oxide (IGZO): Applications Related to Coronavirus COVID-19 Pandemic

10‐1: Layout of 1.50‐inch, 3207‐ppi OLED Display with OSLSI/SiLSI Structure Capable of Division Driving Fabricated through VLSI Process with Side‐by‐Side Patterning by Photolithography

Embedded DRAM Using C-Axis-Aligned Crystalline In-Ga-Zn Oxide FET with 1.8V-Power-Supply Voltage

32‐3: 1.5‐inch, 3207‐ppi Side‐by‐Side OLED Display Capable of 32‐Division Driving with OSLSI/SiLSI Structure Fabricated by Photolithography

A 16-level-cell memory with c-axis-aligned a-b-plane-anchored crystal In-Ga-Zn oxide FET using threshold voltage cancel write method

12.2 Micro Short-Circuit Detector Including S/H Circuit for 1hr Retention and 52dB Comparator Composed of C-Axis Aligned Crystalline IGZO FETs for Li-Ion Battery Protection IC

Semi-Blind Channel Estimation for QAM-OFDM Systems

Fabrication of dynamic oxide semiconductor random access memory with 3.9 fF storage capacitance and greater than 1 h retention by using c-axis aligned crystalline oxide semiconductor transistor with L of 60 nm

(Invited) Multilevel Cell Nonvolatile Memory with Field-effect Transistor Using Crystalline Oxide Semiconductor

Evaluation of Machine Tool Operating State Estimation using Channel State Information

Blind Channel Estimation for QAM-OFDM Systems

Blind Channel Estimation for QAM-OFDM Systems

State retention flip flop architectures with different tradeoffs using crystalline indium gallium zinc oxide transistors implemented in a 32-bit normally-off microprocessor

UHF RFCPUs on Flexible and Glass Substrates for Secure RFID Systems

Security as a Service for User Customized Data Protection

16.9 A 128kb 4b/cell nonvolatile memory with crystalline In-Ga-Zn oxide FET using Vt, cancel write method

Effects of Electrolyzed Acidic Functional Water for Denture Base Acrylics

Heterogeneous Oxide Semiconductor FETs Comprising Planar FET and Vertical Channel FETs Monolithically Stacked on Si CMOS, Enabling 1-Mbit 3D DRAM

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