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High-Speed InP/InGaAsSb DHBT on High-Thermal-Conductivity SiC Substrate

IEEE electron device letters, 2018-06, Vol.39 (6), p.807-810

2018

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A quantitative approach for trap analysis between Al0.25Ga0.75N and GaN in high electron mobility transistors

Scientific reports, 2021-11, Vol.11 (1), p.22401-22401, Article 22401

2021

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High-speed III-V based avalanche photodiodes for optical communications—the forefront and expanding applications

Applied physics letters, 2020-04, Vol.116 (14)

2020

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Frailty and occupational falls among older Japanese workers: An Internet‐based cross‐sectional study

Journal of occupational health, 2023-01, Vol.65 (1), p.e12424-n/a

2023

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Theoretical and experimental investigation of external-stress effect on quantum-well-based semiconductor interferometer performance

Applied physics express, 2021-09, Vol.14 (9), p.91005

2021

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Author's reply to comments on “Predictive ability of the total score of the Kihon checklist for the incidence of functional disability in older Japanese adults: An 8‐year prospective study”

Geriatrics & gerontology international, 2022-11, Vol.22 (11), p.985-986

2022

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High Power and High Speed SOA Assisted Extended Reach EADFB Laser (AXEL) for 53-Gbaud PAM4 Fiber-Amplifier-Less 60-km Optical Link

Journal of lightwave technology, 2020-06, Vol.38 (11), p.2984-2991

2020

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Author Correction: A quantitative approach for trap analysis between Al0.25Ga0.75N and GaN in high electron mobility transistors

Scientific reports, 2021-12, Vol.11 (1), p.23667-23667, Article 23667

2021

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Improvement of High-Frequency Characteristics of InGaAsSb-Base Double Heterojunction Bipolar Transistors by Inserting a Highly Doped GaAsSb Base Contact Layer

IEEE electron device letters, 2015-07, Vol.36 (7), p.657-659

2015

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51-nm Uniform-Intensity Tuning of Superstructure Grating Active-DBR Laser for 2-μm Wavelength Band

IEEE photonics journal, 2022-06, Vol.14 (3), p.1-8

2022

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Explicit Thermal Resistance Model of Self-Heating Effects of AlGaN/GaN HEMTs with Linear and Non-Linear Thermal Conductivity

Materials, 2022-11, Vol.15 (23), p.8415

2022

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Changes of Oral and Physical Functions in Older Japanese Who Participated in Keyboard Harmonica and Exercise Classes during COVID-19-Related Movement Restrictions

International journal of environmental research and public health, 2023-02, Vol.20 (4), p.3700

2023

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Minority-electron transport through atomic-diffusion-bonded InGaAs/a-Ge/InGaAs structure studied by photodiode characterization

Japanese Journal of Applied Physics, 2020-01, Vol.59 (1), p.16501

2020

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Characterization of interface reaction of Ti/Al-based ohmic contacts on AlGaN/GaN epitaxial layers on GaN substrate

Japanese Journal of Applied Physics, 2016-05, Vol.55 (5S), p.5

2016

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Breakdown mechanism in AlGaN/GaN high-electron mobility transistor structure on free-standing n-type GaN substrate

Japanese Journal of Applied Physics, 2016-05, Vol.55 (5S), p.5, Article 05FK01

2016

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Analytical and Physical Investigation on Source Resistance in InxGa1−xAs Quantum-Well High-Electron-Mobility Transistors

Micromachines (Basel), 2023-02, Vol.14 (2), p.439

2023

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Preface to the Special Issue on “Compound Semiconductor Electronics for Future Systems”: 特集号によせて

Denki Gakkai ronbunshi. C, Erekutoronikusu, joho kogaku, shisutemu, 2022-03, Vol.142 (3), p.341-341

Matsuzaki, Hideaki

2022

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Lateral scale down of InGaAs/InAs composite-channel hemts with tungsten-based tiered ohmic structure for 2-s/mm gm and 500-GHz fT

IEEE transactions on electron devices, 2007-03, Vol.54 (3), p.378-384

2007

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Inverted p-down Design for High-Speed Photodetectors

Photonics, 2021-02, Vol.8 (2), p.39

2021

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Theoretical and experimental analysis of the source resistance components in In0.7Ga0.3As quantum-well high-electron-mobility transistors

Journal of the Korean Physical Society, 2021, 78(6), , pp.516-522

2021

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Responsivity-Bandwidth Limit of Avalanche Photodiodes: Toward Future Ethernet Systems

IEEE journal of selected topics in quantum electronics, 2018-03, Vol.24 (2), p.1-11

2018

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Type-II InGaAsSb-Base Double Heterojunction Bipolar Transistors Simultaneously Exhibiting over 600-GHz fmax and 5-V Breakdown Voltage

IEICE transactions on electronics, 2016, Vol.E99.C (5), p.522-527

2016

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Physics-based analytical channel charge model of InxGa1-xAs/In0.52Al0.48As quantum-well field-effect transistors from subthreshold to strong inversion regimes

IEEE journal of the Electron Devices Society, 2022, Vol.10, p.1-1

2022

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Impact of strained GaAs spacer between InP emitter and GaAs1−ySby base on structural properties and electrical characteristics of MOCVD-grown InP/GaAs1−ySby/InP DHBTs

Journal of crystal growth, 2014-06, Vol.395, p.31-37

2014

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300-GHz Band 20-Gbps ASK Transmitter Module Based on InP-HEMT MMICs

2015 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 2015, p.1-4

2015

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High-Speed InP/InGaAsSb DHBT on High-Thermal-Conductivity SiC Substrate

A quantitative approach for trap analysis between Al0.25Ga0.75N and GaN in high electron mobility transistors

High-speed III-V based avalanche photodiodes for optical communications—the forefront and expanding applications

Frailty and occupational falls among older Japanese workers: An Internet‐based cross‐sectional study

Theoretical and experimental investigation of external-stress effect on quantum-well-based semiconductor interferometer performance

Author's reply to comments on “Predictive ability of the total score of the Kihon checklist for the incidence of functional disability in older Japanese adults: An 8‐year prospective study”

High Power and High Speed SOA Assisted Extended Reach EADFB Laser (AXEL) for 53-Gbaud PAM4 Fiber-Amplifier-Less 60-km Optical Link

Author Correction: A quantitative approach for trap analysis between Al0.25Ga0.75N and GaN in high electron mobility transistors

Improvement of High-Frequency Characteristics of InGaAsSb-Base Double Heterojunction Bipolar Transistors by Inserting a Highly Doped GaAsSb Base Contact Layer

51-nm Uniform-Intensity Tuning of Superstructure Grating Active-DBR Laser for 2-μm Wavelength Band

Explicit Thermal Resistance Model of Self-Heating Effects of AlGaN/GaN HEMTs with Linear and Non-Linear Thermal Conductivity

Changes of Oral and Physical Functions in Older Japanese Who Participated in Keyboard Harmonica and Exercise Classes during COVID-19-Related Movement Restrictions

Minority-electron transport through atomic-diffusion-bonded InGaAs/a-Ge/InGaAs structure studied by photodiode characterization

Characterization of interface reaction of Ti/Al-based ohmic contacts on AlGaN/GaN epitaxial layers on GaN substrate

Breakdown mechanism in AlGaN/GaN high-electron mobility transistor structure on free-standing n-type GaN substrate

Analytical and Physical Investigation on Source Resistance in InxGa1−xAs Quantum-Well High-Electron-Mobility Transistors

Preface to the Special Issue on “Compound Semiconductor Electronics for Future Systems”: 特集号によせて

Lateral scale down of InGaAs/InAs composite-channel hemts with tungsten-based tiered ohmic structure for 2-s/mm gm and 500-GHz fT

Inverted p-down Design for High-Speed Photodetectors

Theoretical and experimental analysis of the source resistance components in In0.7Ga0.3As quantum-well high-electron-mobility transistors

Responsivity-Bandwidth Limit of Avalanche Photodiodes: Toward Future Ethernet Systems

Type-II InGaAsSb-Base Double Heterojunction Bipolar Transistors Simultaneously Exhibiting over 600-GHz fmax and 5-V Breakdown Voltage

Physics-based analytical channel charge model of InxGa1-xAs/In0.52Al0.48As quantum-well field-effect transistors from subthreshold to strong inversion regimes

Impact of strained GaAs spacer between InP emitter and GaAs1−ySby base on structural properties and electrical characteristics of MOCVD-grown InP/GaAs1−ySby/InP DHBTs

300-GHz Band 20-Gbps ASK Transmitter Module Based on InP-HEMT MMICs

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