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Patterning characteristics of a chemically-amplified negative resist in synchrotron radiation lithography

Japanese Journal of Applied Physics, 1992-09, Vol.31 (9A), p.2954-2958

1992

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The effect of an organic base in chemically amplified resist on patterning characteristics using KrF lithography

Japanese Journal of Applied Physics, 1994, Vol.33 (12B), p.7023-7027

1994

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X-Ray Phase-Shifting Mask for 0.1-µm Pattern Replication under a Large Proximity Gap Condition

Japanese Journal of Applied Physics, 1992-12, Vol.31 (12S), p.4221

1992

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Characteristics of a Monodisperse PHS-Based Positive Resist (MDPR) in KrF Excimer Laser Lithography

Japanese Journal of Applied Physics, 1992-12, Vol.31 (12S), p.4316

1992

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Hole pattern fabrication using halftone phase-shifting masks in KrF lithography

Japanese Journal of Applied Physics, 1993-12, Vol.32 (12B), p.5880-5886

1993

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A New Proximity Parameter Evaluation Method Utilizing Auxiliary Patterns for Dose Compensation

Japanese Journal of Applied Physics, 1993-12, Vol.32 (12S), p.6028

1993

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Sub-100-nm-scale patterning using a low-energy electron beam

Japanese Journal of Applied Physics, 1992-06, Vol.31 (6A), p.L744-L746

1992

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Simulation of X-ray mask pattern displacement

Japanese Journal of Applied Physics, 1996-12, Vol.35 (12B), p.6469-6474

1996

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Contrast enhancement of SAL resist by reducing residual solvent at prebake

Japanese Journal of Applied Physics, 1991-07, Vol.30 (7A), p.L1215-L1217

1991

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Resolution Enhancement of Hole Patterns in Sychrotron Radiation Lithography

Japanese Journal of Applied Physics, 1993-12, Vol.32 (12S), p.5971

1993

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Precise Delineation Characteristics of Advanced Electron Beam Mask Writer EB-X3 for Fabricating 1× X-Ray Masks

Japanese Journal of Applied Physics, 2000, Vol.39 (12S), p.6902

2000

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X-ray mask fabrication using new membrane process techniques

Japanese Journal of Applied Physics, 1997-12, Vol.36 (12B), p.7580-7585

1997

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New resist technologies for 0.25-μm wiring pattern fabrication with KrF lithography

Japanese Journal of Applied Physics, 1997-04, Vol.36 (4A), p.2085-2090

1997

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Patterning Characteristics of Hole Patterns in Synchrotron Radiation Lithography

Japanese Journal of Applied Physics, 1998-04, Vol.37 (4R), p.2062

1998

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X-Ray Mask Pattern Accuracy Improvement by Superimposing Multiple Exposures Using Different Field Sizes

Japanese Journal of Applied Physics, 1993-12, Vol.32 (12S), p.5933

1993

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Spatial Frequency Doubling Method by Image Superimposition for Sub- 0.15-µm Optical Lithography

Japanese Journal of Applied Physics, 1995-12, Vol.34 (12R), p.6518

1995

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X-ray mask inspection using replicated resist patterns

Japanese Journal of Applied Physics, 1994, Vol.33 (12B), p.6913-6918

1994

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Reduction of Image Shortening in Two-Dimensional Pattern Replication Using X-Ray Lithography

Japanese Journal of Applied Physics, 1998-12, Vol.37 (12S), p.6836

1998

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Spatial Frequency Doubling Method for Sub-0.15-µm Optical Lithography

Japanese Journal of Applied Physics, 1995-05, Vol.34 (5A), p.L594

1995

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Metal-free acid generators for chemically amplified monodispersal polyhydroxystyrene-based positive resist and post-exposure delay problem

Japanese Journal of Applied Physics, 1994, Vol.33 (12B), p.7017-7022

1994

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Overlay repeatability in mix-and-match exposure using the SR stepper : SS-1

Japanese Journal of Applied Physics, 1994, Vol.33 (12B), p.6894-6898

1994

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Sub-100-nm Device Fabrication using Proximity X-Ray Lithography at Five Levels

Japanese Journal of Applied Physics, 2000-12, Vol.39 (12S), p.6952

2000

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Critical-Dimension Controllability of Chemically Amplified Resists for X-Ray Membrane Mask Fabrication

Japanese Journal of Applied Physics, 2000-12, Vol.39 (12S), p.6908

2000

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Dissolution Characteristics and Surface Morphology of Chemically Amplified Resists in X-Ray Lithography

Japanese Journal of Applied Physics, 1998-12, Vol.37 (12S), p.6830

1998

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Very-low-energy electron beam lithography using a retarding field

Japanese Journal of Applied Physics, 1990-10, Vol.29 (10), p.2212-2215

1990

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Patterning characteristics of a chemically-amplified negative resist in synchrotron radiation lithography

The effect of an organic base in chemically amplified resist on patterning characteristics using KrF lithography

X-Ray Phase-Shifting Mask for 0.1-µm Pattern Replication under a Large Proximity Gap Condition

Characteristics of a Monodisperse PHS-Based Positive Resist (MDPR) in KrF Excimer Laser Lithography

Hole pattern fabrication using halftone phase-shifting masks in KrF lithography

A New Proximity Parameter Evaluation Method Utilizing Auxiliary Patterns for Dose Compensation

Sub-100-nm-scale patterning using a low-energy electron beam

Simulation of X-ray mask pattern displacement

Contrast enhancement of SAL resist by reducing residual solvent at prebake

Resolution Enhancement of Hole Patterns in Sychrotron Radiation Lithography

Precise Delineation Characteristics of Advanced Electron Beam Mask Writer EB-X3 for Fabricating 1× X-Ray Masks

X-ray mask fabrication using new membrane process techniques

New resist technologies for 0.25-μm wiring pattern fabrication with KrF lithography

Patterning Characteristics of Hole Patterns in Synchrotron Radiation Lithography

X-Ray Mask Pattern Accuracy Improvement by Superimposing Multiple Exposures Using Different Field Sizes

Spatial Frequency Doubling Method by Image Superimposition for Sub- 0.15-µm Optical Lithography

X-ray mask inspection using replicated resist patterns

Reduction of Image Shortening in Two-Dimensional Pattern Replication Using X-Ray Lithography

Spatial Frequency Doubling Method for Sub-0.15-µm Optical Lithography

Metal-free acid generators for chemically amplified monodispersal polyhydroxystyrene-based positive resist and post-exposure delay problem

Overlay repeatability in mix-and-match exposure using the SR stepper : SS-1

Sub-100-nm Device Fabrication using Proximity X-Ray Lithography at Five Levels

Critical-Dimension Controllability of Chemically Amplified Resists for X-Ray Membrane Mask Fabrication

Dissolution Characteristics and Surface Morphology of Chemically Amplified Resists in X-Ray Lithography

Very-low-energy electron beam lithography using a retarding field

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