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Reliability and Ruggedness of 1200V SiC Planar Gate MOSFETs Fabricated in a High Volume CMOS Foundry

Materials science forum, 2018-06, Vol.924, p.697-702

2018

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Electron-Scattering Mechanisms in Heavily Doped Silicon Carbide MOSFET Inversion Layers

IEEE transactions on electron devices, 2007-11, Vol.54 (11), p.2823-2829

2007

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Comparison of metal-oxide-semiconductor capacitors on c - and m -plane gallium nitride

Applied physics letters, 2007-03, Vol.90 (12), p.123511-123511-2

2007

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Challenges in SiC power MOSFET design

Solid-state electronics, 2008-10, Vol.52 (10), p.1631-1635

Matocha, Kevin

2008

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Performance and Reliability of SiC MOSFETs for High-Current Power Modules

Materials science forum, 2010-04, Vol.645-648, p.1123-1126

2010

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Understanding the Inversion-Layer Properties of the 4H-SiC/SiO2 Interface

Materials science forum, 2011, Vol.679-680, p.318-325

2011

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4kV Silicon Carbide MOSFETs

Materials science forum, 2011-03, Vol.679-680, p.637-640

2011

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High-voltage normally off GaN MOSFETs on sapphire substrates

IEEE transactions on electron devices, 2005-01, Vol.52 (1), p.6-10

2005

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Advanced SiC Power MOSFETs Manufactured on 150mm SiC Wafers

Materials Science Forum, 2016-05, Vol.858, p.803-806

2016

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Reliability and Ruggedness of Planar Silicon Carbide MOSFETs

Materials science forum, 2019-07, Vol.963, p.782-787

2019

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EDMR and EPR Studies of 4H SiC MOSFETs and Capacitors

Materials science forum, 2010-04, Vol.645-648, p.527-530

2010

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Design, Yield and Process Capability Study of 8 kV 4H-SiC PIN Diodes

Materials science forum, 2012-05, Vol.717-720, p.953-956

2012

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3300V SiC DMOSFETs Fabricated in High-Volume 150 mm CMOS Fab

Materials science forum, 2018-06, Vol.924, p.731-734

2018

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Correlation between Thermal Oxide Breakdown and Defects in n-Type 4H-SiC Epitaxial Wafers

Materials science forum, 2009-01, Vol.600-603, p.775-778

2009

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Time-Dependent Dielectric Breakdown of 4H-SiC MOS Capacitors and DMOSFETs

IEEE transactions on electron devices, 2008-08, Vol.55 (8), p.1830-1834

2008

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An Approach to Model Temperature Effects of Interface Traps in 4H-SiC

Materials science forum, 2007-09, Vol.556-557, p.497-500

2007

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Comparative Study on the Repetitive Unclamped-Inductive-Switching Capability(R-UIS) of 1200V 160mOhm SiC Planar Gate MOSFETs

Materials science forum, 2019-07, Vol.963, p.792-796, Article 792

2019

Volltextzugriff (PDF)

Application-focused modeling procedure for 1.2kV SiC MOSFET's

2017 IEEE Applied Power Electronics Conference and Exposition (APEC), 2017, p.3515-3521

2017

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First-principles-based investigation of kinetic mechanism of SiC(0001) dry oxidation including defect generation and passivation

Journal of applied physics, 2008-11, Vol.104 (9), p.093508-093508-9

2008

Volltextzugriff (PDF)

SiC Power MOSFETs: Designing for Reliability in Wide-Bandgap Semiconductors

2019 IEEE International Reliability Physics Symposium (IRPS), 2019, p.1-8

2019

Volltextzugriff (PDF)

Next generation 1200V, 3.5mΩ.cm2 SiC planar gate MOSFET with excellent HTRB reliability

2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2018, p.427-430

2018

Volltextzugriff (PDF)

Self-Aligned N+ Polysilicon-Gate GaN MOSFETs

Materials science forum, 2004-06, Vol.457-460, p.1633-0

2004

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Time-Dependent Dielectric Breakdown of Thermal Oxides on 4H-SiC

Materials science forum, 2007-01, Vol.556-557, p.675-678, Article 675

2007

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Atomistic Scale Modeling and Analysis of Sodium Enhanced Oxidation of Silicon Carbide

Materials science forum, 2009-01, Vol.615-617, p.493-496

2009

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Trap and Inversion Layer Mobility Characterization Using Hall Effect in Silicon Carbide-Based MOSFETs With Gate Oxides Grown by Sodium Enhanced Oxidation

IEEE transactions on electron devices, 2009-02, Vol.56 (2), p.162-169

2009

Volltextzugriff (PDF)

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Reliability and Ruggedness of 1200V SiC Planar Gate MOSFETs Fabricated in a High Volume CMOS Foundry

Electron-Scattering Mechanisms in Heavily Doped Silicon Carbide MOSFET Inversion Layers

Comparison of metal-oxide-semiconductor capacitors on c - and m -plane gallium nitride

Challenges in SiC power MOSFET design

Performance and Reliability of SiC MOSFETs for High-Current Power Modules

Understanding the Inversion-Layer Properties of the 4H-SiC/SiO2 Interface

4kV Silicon Carbide MOSFETs

High-voltage normally off GaN MOSFETs on sapphire substrates

Advanced SiC Power MOSFETs Manufactured on 150mm SiC Wafers

Reliability and Ruggedness of Planar Silicon Carbide MOSFETs

EDMR and EPR Studies of 4H SiC MOSFETs and Capacitors

Design, Yield and Process Capability Study of 8 kV 4H-SiC PIN Diodes

3300V SiC DMOSFETs Fabricated in High-Volume 150 mm CMOS Fab

Correlation between Thermal Oxide Breakdown and Defects in n-Type 4H-SiC Epitaxial Wafers

Time-Dependent Dielectric Breakdown of 4H-SiC MOS Capacitors and DMOSFETs

An Approach to Model Temperature Effects of Interface Traps in 4H-SiC

Comparative Study on the Repetitive Unclamped-Inductive-Switching Capability(R-UIS) of 1200V 160mOhm SiC Planar Gate MOSFETs

Application-focused modeling procedure for 1.2kV SiC MOSFET's

First-principles-based investigation of kinetic mechanism of SiC(0001) dry oxidation including defect generation and passivation

SiC Power MOSFETs: Designing for Reliability in Wide-Bandgap Semiconductors

Next generation 1200V, 3.5mΩ.cm2 SiC planar gate MOSFET with excellent HTRB reliability

Self-Aligned N+ Polysilicon-Gate GaN MOSFETs

Time-Dependent Dielectric Breakdown of Thermal Oxides on 4H-SiC

Atomistic Scale Modeling and Analysis of Sodium Enhanced Oxidation of Silicon Carbide

Trap and Inversion Layer Mobility Characterization Using Hall Effect in Silicon Carbide-Based MOSFETs With Gate Oxides Grown by Sodium Enhanced Oxidation

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