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Reliability and Ruggedness of 1200V SiC Planar Gate MOSFETs Fabricated in a High Volume CMOS Foundry

Materials science forum, 2018-06, Vol.924, p.697-702

2018

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Electron-Scattering Mechanisms in Heavily Doped Silicon Carbide MOSFET Inversion Layers

IEEE transactions on electron devices, 2007-11, Vol.54 (11), p.2823-2829

2007

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IEEE_Xplore

Comparison of metal-oxide-semiconductor capacitors on c - and m -plane gallium nitride

Applied physics letters, 2007-03, Vol.90 (12), p.123511-123511-2

2007

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Challenges in SiC power MOSFET design

Solid-state electronics, 2008-10, Vol.52 (10), p.1631-1635

Matocha, Kevin

2008

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Performance and Reliability of SiC MOSFETs for High-Current Power Modules

Materials science forum, , Vol.645-648, p.1123-1126

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Understanding the Inversion-Layer Properties of the 4H-SiC/SiO2 Interface

Materials science forum, 2011, Vol.679-680, p.318-325

2011

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High-voltage normally off GaN MOSFETs on sapphire substrates

IEEE transactions on electron devices, 2005-01, Vol.52 (1), p.6-10

2005

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IEEE_Xplore

Advanced SiC Power MOSFETs Manufactured on 150mm SiC Wafers

Materials Science Forum, 2016-05, Vol.858, p.803-806

2016

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Reliability and Ruggedness of Planar Silicon Carbide MOSFETs

Materials science forum, 2019-07, Vol.963, p.782-787

2019

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Design, Yield and Process Capability Study of 8 kV 4H-SiC PIN Diodes

Materials science forum, 2012-05, Vol.717-720, p.953-956

2012

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EDMR and EPR Studies of 4H SiC MOSFETs and Capacitors

Materials science forum, 2010-01, Vol.645-648, p.527-530

2010

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3300V SiC DMOSFETs Fabricated in High-Volume 150 mm CMOS Fab

Materials science forum, 2018-06, Vol.924, p.731-734

2018

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Correlation between Thermal Oxide Breakdown and Defects in n-Type 4H-SiC Epitaxial Wafers

Materials science forum, 2009-01, Vol.600-603, p.775-778

2009

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Time-Dependent Dielectric Breakdown of 4H-SiC MOS Capacitors and DMOSFETs

IEEE transactions on electron devices, 2008-08, Vol.55 (8), p.1830-1834

2008

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IEEE_Xplore

Application-focused modeling procedure for 1.2kV SiC MOSFET's

2017 IEEE Applied Power Electronics Conference and Exposition (APEC), 2017, p.3515-3521

2017

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IEEE_Xplore

First-principles-based investigation of kinetic mechanism of SiC(0001) dry oxidation including defect generation and passivation

Journal of applied physics, 2008-11, Vol.104 (9), p.093508-093508-9

2008

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Time Dependent Dielectric Breakdown in High Quality SiC MOS Capacitors

Materials Science Forum, 2016-05, Vol.858, p.615-618

2016

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Time-Dependent Dielectric Breakdown of Thermal Oxides on 4H-SiC

Materials science forum, 2007-01, Vol.556-557, p.675-678

2007

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Self-Aligned N+ Polysilicon-Gate GaN MOSFETs

Materials science forum, , Vol.457-460, p.1633-0

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Trap and Inversion Layer Mobility Characterization Using Hall Effect in Silicon Carbide-Based MOSFETs With Gate Oxides Grown by Sodium Enhanced Oxidation

IEEE transactions on electron devices, 2009-02, Vol.56 (2), p.162-169

2009

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IEEE_Xplore

1700V, 5.5mOhm-cm2 4H-SiC DMOSFET with Stable 225°C Operation

Materials science forum, 2014-02, Vol.778-780, p.903-906

2014

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1700V, 5.5mohm-cm super(2) 4H-SiC DMOSFET with Stable 225[degrees]C Operation

Materials science forum, 2014-02, Vol.778-780, p.903-906

2014

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Development of pit-defect free smooth a-plane GaN surfaces on r-plane sapphire using metalorganic chemical vapor deposition: A growth mechanism study

Physica status solidi. C, 2006-06, Vol.3 (6), p.1792-1797

2006

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Comparison of Inversion Layer Electron Transport of Lightly Doped 4H and 6H SiC MOSFETs

Materials science forum, 2010-01, Vol.645-648, p.1005-1008

2010

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Effect of annealing on GaN-insulator interfaces characterized by metal-insulator-semiconductor capacitors

IEEE transactions on electron devices, 2003-05, Vol.50 (5), p.1200-1204

2003

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IEEE_Xplore

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Reliability and Ruggedness of 1200V SiC Planar Gate MOSFETs Fabricated in a High Volume CMOS Foundry

Electron-Scattering Mechanisms in Heavily Doped Silicon Carbide MOSFET Inversion Layers

Comparison of metal-oxide-semiconductor capacitors on c - and m -plane gallium nitride

Challenges in SiC power MOSFET design

Performance and Reliability of SiC MOSFETs for High-Current Power Modules

Understanding the Inversion-Layer Properties of the 4H-SiC/SiO2 Interface

High-voltage normally off GaN MOSFETs on sapphire substrates

Advanced SiC Power MOSFETs Manufactured on 150mm SiC Wafers

Reliability and Ruggedness of Planar Silicon Carbide MOSFETs

Design, Yield and Process Capability Study of 8 kV 4H-SiC PIN Diodes

EDMR and EPR Studies of 4H SiC MOSFETs and Capacitors

3300V SiC DMOSFETs Fabricated in High-Volume 150 mm CMOS Fab

Correlation between Thermal Oxide Breakdown and Defects in n-Type 4H-SiC Epitaxial Wafers

Time-Dependent Dielectric Breakdown of 4H-SiC MOS Capacitors and DMOSFETs

Application-focused modeling procedure for 1.2kV SiC MOSFET's

First-principles-based investigation of kinetic mechanism of SiC(0001) dry oxidation including defect generation and passivation

Time Dependent Dielectric Breakdown in High Quality SiC MOS Capacitors

Time-Dependent Dielectric Breakdown of Thermal Oxides on 4H-SiC

Self-Aligned N+ Polysilicon-Gate GaN MOSFETs

Trap and Inversion Layer Mobility Characterization Using Hall Effect in Silicon Carbide-Based MOSFETs With Gate Oxides Grown by Sodium Enhanced Oxidation

1700V, 5.5mOhm-cm2 4H-SiC DMOSFET with Stable 225°C Operation

1700V, 5.5mohm-cm super(2) 4H-SiC DMOSFET with Stable 225[degrees]C Operation

Development of pit-defect free smooth a-plane GaN surfaces on r-plane sapphire using metalorganic chemical vapor deposition: A growth mechanism study

Comparison of Inversion Layer Electron Transport of Lightly Doped 4H and 6H SiC MOSFETs

Effect of annealing on GaN-insulator interfaces characterized by metal-insulator-semiconductor capacitors

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