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Origin of light instability in amorphous IGZO thin-film transistors and its suppression

Scientific reports, 2021-07, Vol.11 (1), p.14618-14618, Article 14618

2021

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Highly Robust Bendable Oxide Thin‐Film Transistors on Polyimide Substrates via Mesh and Strip Patterning of Device Layers

Advanced functional materials, 2017-08, Vol.27 (29), p.n/a

2017

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Effects of Structural Phase Transitions on Hysteresis in Air‐Processed Organic–Inorganic Halide Perovskite Thin‐Film Transistors

Physica status solidi. PSS-RRL. Rapid research letters, 2021-08, Vol.15 (8), p.n/a

2021

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Ambient-Air-Processed Ambipolar Perovskite Phototransistor With High Photodetectivity

IEEE transactions on electron devices, 2020-08, Vol.67 (8), p.3215-3220

2020

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Bulk Accumulation a-IGZO TFT for High Current and Turn-On Voltage Uniformity

IEEE electron device letters, 2013-12, Vol.34 (12), p.1533-1535

2013

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IEEE_Xplore

Mechanism of positive bias stress-assisted recovery in amorphous-indium-gallium-zinc-oxide thin-film transistors from negative bias under illumination stress

Applied physics letters, 2013-07, Vol.103 (3)

2013

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P‐121: Solution Processed Organic‐Inorganic Hybrid Perovskite TFTs with Excellent Ambient Air Stability

SID International Symposium Digest of technical papers, 2020-08, Vol.51 (1), p.1825-1828

2020

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Highly Sensitive and Ambient Air-Processed Hybrid Perovskite TFT Temperature Sensor

IEEE electron device letters, 2020-07, Vol.41 (7), p.1086-1089

2020

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IEEE_Xplore

Improvement of bias-stability in amorphous-indium-gallium-zinc-oxide thin-film transistors by using solution-processed Y2O3 passivation

Applied physics letters, 2014-08, Vol.105 (5)

2014

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Highly Robust Neutral Plane Oxide TFTs Withstanding 0.25 mm Bending Radius for Stretchable Electronics

Scientific reports, 2016-05, Vol.6 (1), p.25734-25734, Article 25734

2016

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P‐25: Student Poster: Solution‐Processed CH3NH3PbI3/ZnO Phototransistor with High Photodetectivity

SID International Symposium Digest of technical papers, 2022-06, Vol.53 (1), p.1130-1133

2022

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Threshold voltage shift-proof circular oxide thin film transistor with top and bottom gates for high bending stability

Japanese Journal of Applied Physics, 2020-10, Vol.59 (10), p.104001

2020

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Effect of Precursor Composition on Ion Migration in Hybrid Perovskite CH3NH3PbI3

IEEE electron device letters, 2019-11, Vol.40 (11), p.1756-1759

2019

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IEEE_Xplore

Impact of Source-to-Gate and Drain-to-Gate Overlap Lengths on Performance of Inverted Staggered a-IGZO TFTs With an Etch Stopper

IEEE transactions on electron devices, 2020-08, Vol.67 (8), p.3152-3156

2020

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IEEE_Xplore

Fast-Switching Mixed A-Cation Organic-Inorganic Hybrid Perovskite TFTs

IEEE electron device letters, 2019-06, Vol.40 (6), p.917-920

2019

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IEEE_Xplore

High-Speed Pseudo-CMOS Circuits Using Bulk Accumulation a-IGZO TFTs

IEEE electron device letters, 2015-02, Vol.36 (2), p.153-155

2015

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IEEE_Xplore

Reduction of Hysteresis in Hybrid Perovskite Transistors by Solvent-Controlled Growth

Materials, 2021-05, Vol.14 (10), p.2573

2021

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Full-Swing Clock Generating Circuits on Plastic Using a-IGZO Dual-Gate TFTs With Pseudo-CMOS and Bootstrapping

IEEE electron device letters, 2016-07, Vol.37 (7), p.882-885

2016

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IEEE_Xplore

Ambient Air Stability of Hybrid Perovskite Thin‐Film Transistors by Ambient Air Processing

Advanced materials interfaces, 2020-03, Vol.7 (6), p.n/a

2020

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Composition‐Dependent High‐Performance Phototransistors Based on Solution Processed CH3NH3PbI3/ZnO Heterostructures

Advanced optical materials, 2023-11, Vol.11 (21)

2023

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High current stress effects in amorphous-InGaZnO4 thin-film transistors

Applied physics letters, 2013-01, Vol.102 (2)

2013

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Effect of SiO2 and SiO2/SiNx Passivation on the Stability of Amorphous Indium-Gallium Zinc-Oxide Thin-Film Transistors Under High Humidity

IEEE transactions on electron devices, 2015-03, Vol.62 (3), p.869-874

2015

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IEEE_Xplore

Fast Threshold Voltage Compensation AMOLED Pixel Circuit Using Secondary Gate Effect of Dual Gate a-IGZO TFTs

IEEE electron device letters, 2016-11, Vol.37 (11), p.1450-1453

2016

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IEEE_Xplore

Analysis of Improved Performance Under Negative Bias Illumination Stress of Dual Gate Driving a-IGZO TFT by TCAD Simulation

IEEE electron device letters, 2016-06, Vol.37 (6), p.735-738

2016

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IEEE_Xplore

Lateral Grain Growth of Amorphous Silicon Films With Wide Thickness Range by Blue Laser Annealing and Application to High Performance Poly-Si TFTs

IEEE electron device letters, 2016-03, Vol.37 (3), p.291-294

2016

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IEEE_Xplore

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Origin of light instability in amorphous IGZO thin-film transistors and its suppression

Highly Robust Bendable Oxide Thin‐Film Transistors on Polyimide Substrates via Mesh and Strip Patterning of Device Layers

Effects of Structural Phase Transitions on Hysteresis in Air‐Processed Organic–Inorganic Halide Perovskite Thin‐Film Transistors

Ambient-Air-Processed Ambipolar Perovskite Phototransistor With High Photodetectivity

Bulk Accumulation a-IGZO TFT for High Current and Turn-On Voltage Uniformity

Mechanism of positive bias stress-assisted recovery in amorphous-indium-gallium-zinc-oxide thin-film transistors from negative bias under illumination stress

P‐121: Solution Processed Organic‐Inorganic Hybrid Perovskite TFTs with Excellent Ambient Air Stability

Highly Sensitive and Ambient Air-Processed Hybrid Perovskite TFT Temperature Sensor

Improvement of bias-stability in amorphous-indium-gallium-zinc-oxide thin-film transistors by using solution-processed Y2O3 passivation

Highly Robust Neutral Plane Oxide TFTs Withstanding 0.25 mm Bending Radius for Stretchable Electronics

P‐25: Student Poster: Solution‐Processed CH3NH3PbI3/ZnO Phototransistor with High Photodetectivity

Threshold voltage shift-proof circular oxide thin film transistor with top and bottom gates for high bending stability

Effect of Precursor Composition on Ion Migration in Hybrid Perovskite CH3NH3PbI3

Impact of Source-to-Gate and Drain-to-Gate Overlap Lengths on Performance of Inverted Staggered a-IGZO TFTs With an Etch Stopper

Fast-Switching Mixed A-Cation Organic-Inorganic Hybrid Perovskite TFTs

High-Speed Pseudo-CMOS Circuits Using Bulk Accumulation a-IGZO TFTs

Reduction of Hysteresis in Hybrid Perovskite Transistors by Solvent-Controlled Growth

Full-Swing Clock Generating Circuits on Plastic Using a-IGZO Dual-Gate TFTs With Pseudo-CMOS and Bootstrapping

Ambient Air Stability of Hybrid Perovskite Thin‐Film Transistors by Ambient Air Processing

Composition‐Dependent High‐Performance Phototransistors Based on Solution Processed CH3NH3PbI3/ZnO Heterostructures

High current stress effects in amorphous-InGaZnO4 thin-film transistors

Effect of SiO2 and SiO2/SiNx Passivation on the Stability of Amorphous Indium-Gallium Zinc-Oxide Thin-Film Transistors Under High Humidity

Fast Threshold Voltage Compensation AMOLED Pixel Circuit Using Secondary Gate Effect of Dual Gate a-IGZO TFTs

Analysis of Improved Performance Under Negative Bias Illumination Stress of Dual Gate Driving a-IGZO TFT by TCAD Simulation

Lateral Grain Growth of Amorphous Silicon Films With Wide Thickness Range by Blue Laser Annealing and Application to High Performance Poly-Si TFTs

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