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Performance of GaN Power Devices for Cryogenic Applications Down to 4.2 K

IEEE transactions on power electronics, 2021-07, Vol.36 (7), p.7412-7416

2021

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2 kV slanted tri-gate GaN-on-Si Schottky barrier diodes with ultra-low leakage current

Applied physics letters, 2018-01, Vol.112 (5)

2018

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Accurate Measurement of Dynamic ON-Resistance in GaN Transistors at Steady-State

IEEE transactions on power electronics, 2023-07, Vol.38 (7), p.8045-8050

2023

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Chip-Scale Watt-Range Terahertz Generation Based on Fast Transition in Nanoplasma Switches

IEEE electron device letters, 2024-06, Vol.45 (6), p.1072-1075

2024

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GaN-based power devices: Physics, reliability, and perspectives

Journal of applied physics, 2021-11, Vol.130 (18)

2021

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High Performance Tri-Gate GaN Power MOSHEMTs on Silicon Substrate

IEEE electron device letters, 2017-03, Vol.38 (3), p.367-370

2017

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Enhanced DAB for Efficiency Preservation Using Adjustable-Tap High-Frequency Transformer

IEEE transactions on power electronics, 2020-07, Vol.35 (7), p.6673-6677

2020

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Efficient Microchannel Cooling of Multiple Power Devices With Compact Flow Distribution for High Power-Density Converters

IEEE transactions on power electronics, 2020-07, Vol.35 (7), p.7235-7245

2020

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Polarization-Enhanced GaN Schottky Barrier Diodes: Ultra-Thin InGaN for High Breakdown Voltage and Low Ron

IEEE electron device letters, 2024-07, Vol.45 (7), p.1121-1124

2024

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Fully Soft-Switched High Step-Up Nonisolated Three-Port DC-DC Converter Using GaN HEMTs

IEEE transactions on industrial electronics (1982), 2020-10, Vol.67 (10), p.8371-8380

2020

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Fast-Switching Tri-Anode Schottky Barrier Diodes for Monolithically Integrated GaN-on-Si Power Circuits

IEEE electron device letters, 2020-01, Vol.41 (1), p.99-102

2020

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GaN-on-Si Quasi-Vertical Power MOSFETs

IEEE electron device letters, 2018-01, Vol.39 (1), p.71-74

2018

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High-Performance Nanowire-Based E-Mode Power GaN MOSHEMTs With Large Work-Function Gate Metal

IEEE electron device letters, 2019-03, Vol.40 (3), p.439-442

2019

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Multi-Channel AlGaN/GaN In-Plane-Gate Field-Effect Transistors

IEEE electron device letters, 2020-03, Vol.41 (3), p.321-324

2020

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Fully Vertical GaN-on-Si power MOSFETs

IEEE electron device letters, 2019-03, Vol.40 (3), p.443-446

2019

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A perspective on multi-channel technology for the next-generation of GaN power devices

Applied physics letters, 2022-05, Vol.120 (19)

2022

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Multi-channel tri-gate normally-on/off AlGaN/GaN MOSHEMTs on Si substrate with high breakdown voltage and low ON-resistance

Applied physics letters, 2018-12, Vol.113 (24)

2018

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Vertical GaN-on-Si MOSFETs With Monolithically Integrated Freewheeling Schottky Barrier Diodes

IEEE electron device letters, 2018-07, Vol.39 (7), p.1034-1037

2018

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Enhancement-Mode Multi-Channel AlGaN/GaN Transistors With LiNiO Junction Tri-Gate

IEEE electron device letters, 2022-09, Vol.43 (9), p.1523-1526

2022

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Multi-Channel Tri-Gate GaN Power Schottky Diodes With Low ON-Resistance

IEEE electron device letters, 2019-02, Vol.40 (2), p.275-278

2019

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Direct high-temperature growth of single-crystalline GaN on ScAlMgO4 substrates by metalorganic chemical vapor deposition

Japanese Journal of Applied Physics, 2022-04, Vol.61 (4), p.048002

2022

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Measurement of Large-Signal C OSS and C OSS Losses of Transistors Based on Nonlinear Resonance

IEEE transactions on power electronics, 2020-03, Vol.35 (3), p.2242-2246

2020

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Comparison of Wide-Band-Gap Technologies for Soft-Switching Losses at High Frequencies

IEEE transactions on power electronics, 2020-12, Vol.35 (12), p.12595-12600

2020

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Direct high-temperature growth of GaN on Si using trimethylaluminum preflow enabling vertically-conducting heterostructures

Japanese Journal of Applied Physics, 2024-06, Vol.63 (6), p.60904

2024

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1100 V AlGaN/GaN MOSHEMTs With Integrated Tri-Anode Freewheeling Diodes

IEEE electron device letters, 2018-07, Vol.39 (7), p.1038-1041

2018

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Performance of GaN Power Devices for Cryogenic Applications Down to 4.2 K

2 kV slanted tri-gate GaN-on-Si Schottky barrier diodes with ultra-low leakage current

Accurate Measurement of Dynamic ON-Resistance in GaN Transistors at Steady-State

Chip-Scale Watt-Range Terahertz Generation Based on Fast Transition in Nanoplasma Switches

GaN-based power devices: Physics, reliability, and perspectives

High Performance Tri-Gate GaN Power MOSHEMTs on Silicon Substrate

Enhanced DAB for Efficiency Preservation Using Adjustable-Tap High-Frequency Transformer

Efficient Microchannel Cooling of Multiple Power Devices With Compact Flow Distribution for High Power-Density Converters

Polarization-Enhanced GaN Schottky Barrier Diodes: Ultra-Thin InGaN for High Breakdown Voltage and Low Ron

Fully Soft-Switched High Step-Up Nonisolated Three-Port DC-DC Converter Using GaN HEMTs

Fast-Switching Tri-Anode Schottky Barrier Diodes for Monolithically Integrated GaN-on-Si Power Circuits

GaN-on-Si Quasi-Vertical Power MOSFETs

High-Performance Nanowire-Based E-Mode Power GaN MOSHEMTs With Large Work-Function Gate Metal

Multi-Channel AlGaN/GaN In-Plane-Gate Field-Effect Transistors

Fully Vertical GaN-on-Si power MOSFETs

A perspective on multi-channel technology for the next-generation of GaN power devices

Multi-channel tri-gate normally-on/off AlGaN/GaN MOSHEMTs on Si substrate with high breakdown voltage and low ON-resistance

Vertical GaN-on-Si MOSFETs With Monolithically Integrated Freewheeling Schottky Barrier Diodes

Enhancement-Mode Multi-Channel AlGaN/GaN Transistors With LiNiO Junction Tri-Gate

Multi-Channel Tri-Gate GaN Power Schottky Diodes With Low ON-Resistance

Direct high-temperature growth of single-crystalline GaN on ScAlMgO4 substrates by metalorganic chemical vapor deposition

Measurement of Large-Signal C OSS and C OSS Losses of Transistors Based on Nonlinear Resonance

Comparison of Wide-Band-Gap Technologies for Soft-Switching Losses at High Frequencies

Direct high-temperature growth of GaN on Si using trimethylaluminum preflow enabling vertically-conducting heterostructures

1100 V AlGaN/GaN MOSHEMTs With Integrated Tri-Anode Freewheeling Diodes

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