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0.18-μm CMOS 10-Gb/s multiplexer/demultiplexer ICs using current mode logic with tolerance to threshold voltage fluctuation

IEEE journal of solid-state circuits, 2001-06, Vol.36 (6), p.988-996

2001

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Numerical analysis of alpha-particle-induced soft errors in floating channel type surrounding gate transistor (FC-SGT) DRAM cell

IEEE transactions on electron devices, 2003-07, Vol.50 (7), p.1638-1644

2003

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Photoluminescence properties of nitrogen-doped ZnO films deposited on ZnO single crystal substrates by the plasma-assisted reactive evaporation method

Applied surface science, 2007-10, Vol.254 (1), p.164-166

2007

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Applicability of ZnO single crystals for ultraviolet sensors

Physica status solidi. C, 2006-03, Vol.3 (4), p.1238-1241

2006

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Novel ultrahigh-density flash memory with a stacked-surrounding gate transistor (S-SGT) structured cell

IEEE transactions on electron devices, 2003-04, Vol.50 (4), p.945-951

2003

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NAND-type DRAM-on-SGT

IEEE transactions on electron devices, 2005-03, Vol.52 (3), p.427-429

2005

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Device design guidelines for FC-SGT DRAM cells with high soft-error immunity

IEEE transactions on electron devices, 2005-06, Vol.52 (6), p.1194-1199

2005

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Homoepitaxial growth of non-polar ZnO ( 1 1 2 ¯ 0 ) films on off-angle ZnO substrates by MOCVD

Journal of crystal growth, 2007, Vol.298, p.457-460

2007

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Comparison of non-polar ZnO ( 1 1 2 ¯ 0 ) films deposited on single crystal ZnO ( 1 1 2 ¯ 0 ) and sapphire ( 0 1 1 ¯ 2 ) substrates

Journal of crystal growth, 2007, Vol.298, p.477-480

2007

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An on-chip 96.5% current efficiency CMOS linear regulator using a flexible control technique of output current

IEEE journal of solid-state circuits, 2001-01, Vol.36 (1), p.34-39

2001

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A New Architecture for High-Density High-Performance SGT nor Flash Memory

IEEE transactions on circuits and systems. II, Express briefs, 2008-06, Vol.55 (6), p.551-555

2008

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Reliability issues of flash memory cells

Proceedings of the IEEE, 1993-05, Vol.81 (5), p.776-788

1993

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Impact of surrounding gate transistor (SGT) for ultra-high-density LSI's

IEEE transactions on electron devices, 1991-03, Vol.38 (3), p.573-578

1991

Volltextzugriff (PDF)

New three-dimensional memory array architecture for future ultrahigh-density DRAM

IEEE journal of solid-state circuits, 1999-04, Vol.34 (4), p.476-483

1999

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Numerical analysis of a cylindrical thin-pillar transistor (CYNTHIA)

IEEE transactions on electron devices, 1992-08, Vol.39 (8), p.1876-1881

1992

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A quick intelligent page-programming architecture and a shielded bitline sensing method for 3 V-only NAND flash memory

IEEE journal of solid-state circuits, 1994-11, Vol.29 (11), p.1366-1373

1994

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Multi-pillar surrounding gate transistor (M-SGT) for compact and high-speed circuits

IEEE transactions on electron devices, 1991-03, Vol.38 (3), p.579-583

1991

Volltextzugriff (PDF)

Great impact of RFC technology on fast recovery diode towards 600 V for low loss and high dynamic ruggedness

2012 24th International Symposium on Power Semiconductor Devices and ICs, 2012, p.373-376

2012

Volltextzugriff (PDF)

A novel circuit technology with surrounding gate transistors (SGT's) for ultra high density DRAM's

IEEE journal of solid-state circuits, 1995-09, Vol.30 (9), p.960-971

1995

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12-EUV Layer Surrounding Gate Transistor (SGT) for Vertical 6-T SRAM: 5-nm-class Technology for Ultra-Density Logic Devices

2019 Symposium on VLSI Technology, 2019, p.T198-T199

2019

Volltextzugriff (PDF)

Analysis of the NAND-type DRAM-on-SGT for high-density and low-voltage memory

Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005, 2005, p.193-196

2005

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A new write/erase method to improve the read disturb characteristics based on the decay phenomena of stress leakage current for flash memories

IEEE transactions on electron devices, 1998-01, Vol.45 (1), p.98-104

1998

Volltextzugriff (PDF)

DTCO and TCAD for a 12 Layer-EUV Ultra-Scaled Surrounding Gate Transistor 6T-SRAM

2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2018, p.45-48

2018

Volltextzugriff (PDF)

A 10Gb/s demultiplexer IC in 0.18 mu m CMOS using current mode logic with tolerance to the threshold voltage fluctuation

Digest of technical papers - IEEE International Solid-State Circuits Conference, 2000

2000

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Relaxation of current filament due to RFC technology and ballast resistor for robust FWD operation

2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs, 2011, p.96-99

2011

Volltextzugriff (PDF)

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0.18-μm CMOS 10-Gb/s multiplexer/demultiplexer ICs using current mode logic with tolerance to threshold voltage fluctuation

Numerical analysis of alpha-particle-induced soft errors in floating channel type surrounding gate transistor (FC-SGT) DRAM cell

Photoluminescence properties of nitrogen-doped ZnO films deposited on ZnO single crystal substrates by the plasma-assisted reactive evaporation method

Applicability of ZnO single crystals for ultraviolet sensors

Novel ultrahigh-density flash memory with a stacked-surrounding gate transistor (S-SGT) structured cell

NAND-type DRAM-on-SGT

Device design guidelines for FC-SGT DRAM cells with high soft-error immunity

Homoepitaxial growth of non-polar ZnO ( 1 1 2 ¯ 0 ) films on off-angle ZnO substrates by MOCVD

Comparison of non-polar ZnO ( 1 1 2 ¯ 0 ) films deposited on single crystal ZnO ( 1 1 2 ¯ 0 ) and sapphire ( 0 1 1 ¯ 2 ) substrates

An on-chip 96.5% current efficiency CMOS linear regulator using a flexible control technique of output current

A New Architecture for High-Density High-Performance SGT nor Flash Memory

Reliability issues of flash memory cells

Impact of surrounding gate transistor (SGT) for ultra-high-density LSI's

New three-dimensional memory array architecture for future ultrahigh-density DRAM

Numerical analysis of a cylindrical thin-pillar transistor (CYNTHIA)

A quick intelligent page-programming architecture and a shielded bitline sensing method for 3 V-only NAND flash memory

Multi-pillar surrounding gate transistor (M-SGT) for compact and high-speed circuits

Great impact of RFC technology on fast recovery diode towards 600 V for low loss and high dynamic ruggedness

A novel circuit technology with surrounding gate transistors (SGT's) for ultra high density DRAM's

12-EUV Layer Surrounding Gate Transistor (SGT) for Vertical 6-T SRAM: 5-nm-class Technology for Ultra-Density Logic Devices

Analysis of the NAND-type DRAM-on-SGT for high-density and low-voltage memory

A new write/erase method to improve the read disturb characteristics based on the decay phenomena of stress leakage current for flash memories

DTCO and TCAD for a 12 Layer-EUV Ultra-Scaled Surrounding Gate Transistor 6T-SRAM

A 10Gb/s demultiplexer IC in 0.18 mu m CMOS using current mode logic with tolerance to the threshold voltage fluctuation

Relaxation of current filament due to RFC technology and ballast resistor for robust FWD operation

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