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Heterostructure WSe2−Ga2O3 Junction Field-Effect Transistor for Low-Dimensional High-Power Electronics

ACS applied materials & interfaces, 2018-09, Vol.10 (35), p.29724-29729

2018

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Characterizing the tunable refractive index of vanadium dioxide

Optical materials express, 2017-05, Vol.7 (5), p.1697

2017

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Detecting defects that reduce breakdown voltage using machine learning and optical profilometry

Scientific reports, 2024-03, Vol.14 (1), p.7440-7440, Article 7440

2024

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Gallium Oxide: Technology, Devices and Applications

1, 2018

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Substrate-Dependent Effects on the Response of AlGaN/GaN HEMTs to 2-MeV Proton Irradiation

IEEE electron device letters, 2014-08, Vol.35 (8), p.826-828

2014

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Using machine learning with optical profilometry for GaN wafer screening

Scientific reports, 2023-02, Vol.13 (1), p.3352-3352, Article 3352

2023

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Technique for the Dry Transfer of Epitaxial Graphene onto Arbitrary Substrates

ACS nano, 2010-02, Vol.4 (2), p.1108-1114

2010

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Exfoliated β-Ga2O3 nano-belt field-effect transistors for air-stable high power and high temperature electronics

Physical chemistry chemical physics : PCCP, 2016-06, Vol.18 (23), p.1576-15764

2016

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Multicycle rapid thermal annealing optimization of Mg-implanted GaN: Evolution of surface, optical, and structural properties

Journal of applied physics, 2014-08, Vol.116 (6)

2014

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Quasi-Two-Dimensional h‑BN/β-Ga2O3 Heterostructure Metal–Insulator–Semiconductor Field-Effect Transistor

ACS applied materials & interfaces, 2017-06, Vol.9 (25), p.21322-21327

2017

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A review of Ga2O3 materials, processing, and devices

Applied physics reviews, 2018-03, Vol.5 (1)

2018

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Financial Derivative and Energy Market Valuation: Theory and Implementation in MATLAB

Mastro, Michael

1. Aufl., 2013

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Epitaxial Growth of III–Nitride/Graphene Heterostructures for Electronic Devices

Applied physics express, 2013-06, Vol.6 (6), p.61003

2013

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Chemical etching behaviors of semipolar (112&cmb.macr;2) and nonpolar (112&cmb.macr;0) gallium nitride films

Physical chemistry chemical physics : PCCP, 2014-08, Vol.16 (3), p.1578-15783

2014

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Effect of front and back gates on β-Ga2O3 nano-belt field-effect transistors

Applied physics letters, 2016-08, Vol.109 (6)

2016

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Buried graphene electrodes on GaN-based ultra-violet light-emitting diodes

Applied physics letters, 2012-07, Vol.101 (3)

2012

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Self-Assembled Monolayers of Alkylphosphonic Acid on GaN Substrates

Langmuir, 2008-07, Vol.24 (13), p.6630-6635

2008

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Thermal atomic layer etching of crystalline GaN using sequential exposures of XeF2 and BCl3

Applied physics letters, 2019-06, Vol.114 (24)

2019

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Site control of quantum emitters in gallium nitride by polarity

Applied physics letters, 2021-01, Vol.118 (2)

2021

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Controlling the threshold voltage of β-Ga2O3 field-effect transistors via remote fluorine plasma treatment

Journal of materials chemistry. C, Materials for optical and electronic devices, 2019, Vol.7 (29), p.8855-8860

2019

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Zika virus detection using antibody-immobilized disposable cover glass and AlGaN/GaN high electron mobility transistors

Applied physics letters, 2018-07, Vol.113 (3)

2018

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Activation of implanted Si, Ge, and Sn donors in high-resistivity halide vapor phase epitaxial β-Ga2O3:N with high mobility

Applied physics letters, 2022-11, Vol.121 (19)

2022

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Rapid detection of cardiac troponin I using antibody-immobilized gate-pulsed AlGaN/GaN high electron mobility transistor structures

Applied physics letters, 2017-11, Vol.111 (20)

2017

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Photopolymerization of Self-Assembled Monolayers of Diacetylenic Alkylphosphonic Acids on Group-III Nitride Substrates

Langmuir, 2010-07, Vol.26 (13), p.10725-10730

2010

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Wet etching of non-polar gallium nitride light-emitting diode structure for enhanced light extraction

Journal of crystal growth, 2011-07, Vol.326 (1), p.65-68

2011

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Heterostructure WSe2−Ga2O3 Junction Field-Effect Transistor for Low-Dimensional High-Power Electronics

Characterizing the tunable refractive index of vanadium dioxide

Detecting defects that reduce breakdown voltage using machine learning and optical profilometry

Gallium Oxide: Technology, Devices and Applications

Substrate-Dependent Effects on the Response of AlGaN/GaN HEMTs to 2-MeV Proton Irradiation

Using machine learning with optical profilometry for GaN wafer screening

Technique for the Dry Transfer of Epitaxial Graphene onto Arbitrary Substrates

Exfoliated β-Ga2O3 nano-belt field-effect transistors for air-stable high power and high temperature electronics

Multicycle rapid thermal annealing optimization of Mg-implanted GaN: Evolution of surface, optical, and structural properties

Quasi-Two-Dimensional h‑BN/β-Ga2O3 Heterostructure Metal–Insulator–Semiconductor Field-Effect Transistor

A review of Ga2O3 materials, processing, and devices

Financial Derivative and Energy Market Valuation: Theory and Implementation in MATLAB

Epitaxial Growth of III–Nitride/Graphene Heterostructures for Electronic Devices

Chemical etching behaviors of semipolar (112&cmb.macr;2) and nonpolar (112&cmb.macr;0) gallium nitride films

Effect of front and back gates on β-Ga2O3 nano-belt field-effect transistors

Buried graphene electrodes on GaN-based ultra-violet light-emitting diodes

Self-Assembled Monolayers of Alkylphosphonic Acid on GaN Substrates

Thermal atomic layer etching of crystalline GaN using sequential exposures of XeF2 and BCl3

Site control of quantum emitters in gallium nitride by polarity

Controlling the threshold voltage of β-Ga2O3 field-effect transistors via remote fluorine plasma treatment

Zika virus detection using antibody-immobilized disposable cover glass and AlGaN/GaN high electron mobility transistors

Activation of implanted Si, Ge, and Sn donors in high-resistivity halide vapor phase epitaxial β-Ga2O3:N with high mobility

Rapid detection of cardiac troponin I using antibody-immobilized gate-pulsed AlGaN/GaN high electron mobility transistor structures

Photopolymerization of Self-Assembled Monolayers of Diacetylenic Alkylphosphonic Acids on Group-III Nitride Substrates

Wet etching of non-polar gallium nitride light-emitting diode structure for enhanced light extraction

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