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Enhanced excitonic emission efficiency in porous GaN

Scientific reports, 2018-10, Vol.8 (1), p.15767-9, Article 15767

2018

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Top-down fabrication of GaN nano-laser arrays by displacement Talbot lithography and selective area sublimation

Applied physics express, 2019-04, Vol.12 (4), p.45007

2019

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Displacement Talbot lithography for nano-engineering of III-nitride materials

Microsystems & nanoengineering, 2019-12, Vol.5 (1), p.52-12, Article 52

2019

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Structural, optical, and magnetic properties of highly-resistive Sm-implanted GaN thin films

Journal of applied physics, 2014-07, Vol.116 (4)

2014

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Optical properties and structural investigations of (11-22)-oriented GaN/Al0.5Ga0.5N quantum wells grown by molecular beam epitaxy

Journal of applied physics, 2015-07, Vol.118 (2)

2015

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Investigation of AlyGa1−yN/Al0.5Ga0.5N quantum dot properties for the design of ultraviolet emitters

Japanese Journal of Applied Physics, 2016-05, Vol.55 (5S)

2016

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AlGaN-Based Light Emitting Diodes Using Self-Assembled GaN Quantum Dots for Ultraviolet Emission

Japanese Journal of Applied Physics, 2013-08, Vol.52 (8), p.08JG01-08JG01-4

2013

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Why and how In composition fluctuations appear in InGaN?

Journal of crystal growth, 2023-02, Vol.603, p.127033, Article 127033

2023

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Group-III nitride quantum heterostructures grown by molecular beam epitaxy

Journal of physics. Condensed matter, 2001-08, Vol.13 (32), p.6945-6960

2001

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Monolithic White Light Emitting Diodes Based on InGaN/GaN Multiple-Quantum Wells

Japanese Journal of Applied Physics, 2001-09, Vol.40 (9A), p.L918-L920

2001

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AlGaN/GaN HEMTs on a (001)-Oriented Silicon Substrate Based on 100-nm SiN Recessed Gate Technology for Microwave Power Amplification

IEEE transactions on electron devices, 2007-11, Vol.54 (11), p.2843-2848

2007

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Blue (Ga,In)N/GaN Light Emitting Diodes on Si(110) Substrate

Applied physics express, 2008-12, Vol.1, p.121101

2008

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Internal quantum efficiencies of AlGaN quantum dots grown by molecular beam epitaxy and emitting in the UVA to UVC ranges

Journal of applied physics, 2019-11, Vol.126 (20)

2019

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Mesoporous GaN Made by Selective Area Sublimation for Efficient Light Emission on Si Substrate

physica status solidi (b), 2018-05, Vol.255 (5), p.n/a

2018

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Excitons in nitride heterostructures: From zero- to one-dimensional behavior

Physical review. B, Condensed matter and materials physics, 2013-09, Vol.88 (12), Article 125437

2013

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Surface morphology of AlN and size dispersion of GaN quantum dots

Journal of crystal growth, 2005-02, Vol.274 (3-4), p.387-393

2005

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Influence of the heterostructure design on the optical properties of GaN and Al0.1Ga0.9N quantum dots for ultraviolet emission

Journal of applied physics, 2017-08, Vol.122 (8)

2017

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UVA and UVB light emitting diodes with AlyGa1−yN quantum dot active regions covering the 305-335 nm range

Semiconductor science and technology, 2018-06, Vol.33 (7)

2018

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Properties of AlN layers grown on c-sapphire substrate using ammonia assisted MBE

Journal of crystal growth, 2018-10, Vol.499, p.40-46

2018

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Photoreflectance investigations of the bowing parameter in AlGaN alloys lattice-matched to GaN

Applied physics letters, 1999-05, Vol.74 (22), p.3353-3355

1999

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Polar and semipolar GaN/Al0.5Ga0.5N nanostructures for UV light emitters

Semiconductor science and technology, 2014-08, Vol.29 (8)

2014

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Ultrathin AlN‐Based HEMTs Grown on Silicon Substrate by NH3‐MBE

Physica status solidi. A, Applications and materials science, 2018-05, Vol.215 (9), p.n/a

2018

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Radiative lifetime of a single electron-hole pair in GaN∕AlN quantum dots

Physical review. B, Condensed matter and materials physics, 2006-03, Vol.73 (11)

2006

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High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopy

Applied physics letters, 2001-02, Vol.78 (9), p.1252-1254

2001

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Blue Resonant Cavity Light Emitting Diodes with a High-Al-Content GaN/AlGaN Distributed Bragg Reflector

Japanese Journal of Applied Physics, 2003-12, Vol.42 (Part 2, No. 12B), p.L1509-L1511

2003

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Enhanced excitonic emission efficiency in porous GaN

Top-down fabrication of GaN nano-laser arrays by displacement Talbot lithography and selective area sublimation

Displacement Talbot lithography for nano-engineering of III-nitride materials

Structural, optical, and magnetic properties of highly-resistive Sm-implanted GaN thin films

Optical properties and structural investigations of (11-22)-oriented GaN/Al0.5Ga0.5N quantum wells grown by molecular beam epitaxy

Investigation of AlyGa1−yN/Al0.5Ga0.5N quantum dot properties for the design of ultraviolet emitters

AlGaN-Based Light Emitting Diodes Using Self-Assembled GaN Quantum Dots for Ultraviolet Emission

Why and how In composition fluctuations appear in InGaN?

Group-III nitride quantum heterostructures grown by molecular beam epitaxy

Monolithic White Light Emitting Diodes Based on InGaN/GaN Multiple-Quantum Wells

AlGaN/GaN HEMTs on a (001)-Oriented Silicon Substrate Based on 100-nm SiN Recessed Gate Technology for Microwave Power Amplification

Blue (Ga,In)N/GaN Light Emitting Diodes on Si(110) Substrate

Internal quantum efficiencies of AlGaN quantum dots grown by molecular beam epitaxy and emitting in the UVA to UVC ranges

Mesoporous GaN Made by Selective Area Sublimation for Efficient Light Emission on Si Substrate

Excitons in nitride heterostructures: From zero- to one-dimensional behavior

Surface morphology of AlN and size dispersion of GaN quantum dots

Influence of the heterostructure design on the optical properties of GaN and Al0.1Ga0.9N quantum dots for ultraviolet emission

UVA and UVB light emitting diodes with AlyGa1−yN quantum dot active regions covering the 305-335 nm range

Properties of AlN layers grown on c-sapphire substrate using ammonia assisted MBE

Photoreflectance investigations of the bowing parameter in AlGaN alloys lattice-matched to GaN

Polar and semipolar GaN/Al0.5Ga0.5N nanostructures for UV light emitters

Ultrathin AlN‐Based HEMTs Grown on Silicon Substrate by NH3‐MBE

Radiative lifetime of a single electron-hole pair in GaN∕AlN quantum dots

High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopy

Blue Resonant Cavity Light Emitting Diodes with a High-Al-Content GaN/AlGaN Distributed Bragg Reflector

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