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Photoluminescence of single InAs quantum dots obtained by self-organized growth on GaAs

Physical review letters, 1994-08, Vol.73 (5), p.716-719

1994

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Calculation of the energy levels in InAs/GaAs quantum dots

Solid state communications, 1994, Vol.92 (5), p.437-442

1994

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Time-resolved characterization of InAsP∕InP quantum dots emitting in the C-band telecommunication window

Applied physics letters, 2008-08, Vol.93 (7)

2008

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One-step nano-selective area growth (nano-SAG) of localized InAs/InP quantum dots: First step towards single-photon source applications

Journal of crystal growth, 2008-07, Vol.310 (15), p.3413-3415

2008

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Quantum boxes as active probes for photonic microstructures: The pillar microcavity case

Applied physics letters, 1996-07, Vol.69 (4), p.449-451

1996

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Infrared spectroscopy of intraband transitions in self-organized InAs/GaAs quantum dots

Journal of applied physics, 1997-10, Vol.82 (7), p.3396-3401

1997

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Physics informed and data-based augmented learning in structural health diagnosis

Computer methods in applied mechanics and engineering, 2023-09, Vol.414, p.116186, Article 116186

2023

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Growth by molecular beam epitaxy and characterization of InAs/GaAs strained-layer superlattices

Applied physics letters, 1985-11, Vol.47 (10), p.1099-1101

1985

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Giant Rabi splitting in a microcavity containing distributed quantum wells

Applied physics letters, 1998-09, Vol.73 (12), p.1694-1696

1998

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Nano-fabrication with focused ion beams

Microelectronic engineering, 2001-09, Vol.57, p.865-875

2001

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Hartree-like calculations of energy levels in quantum wires

Solid state communications, 1994-07, Vol.91 (1), p.39-43

1994

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Barrier strain influence on the high-speed properties of compressively strained InGaAsP multiquantum-well laser structures

IEEE journal of selected topics in quantum electronics, 1997-04, Vol.3 (2), p.330-335

1997

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High quality ultrathin InAs/GaAs quantum wells grown by standard and low-temperature modulated-fluxes molecular beam epitaxy

Applied physics letters, 1988-08, Vol.53 (7), p.568-570

1988

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Optical investigation of the one-dimensional confinement effects in narrow GaAs/GaAlAs quantum wires

Applied physics letters, 1992-12, Vol.61 (25), p.3023-3025

1992

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Microfabrication and optical study of reactive ion etched InGaAsP/InP and GaAs/GaAlAs quantum wires

Applied physics letters, 1990-02, Vol.56 (9), p.830-832

1990

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Optical characterization of selectively intermixed GaAs/GaAlAs quantum wires by Ga+ masked implantation

Journal of applied physics, 1991-08, Vol.70 (3), p.1444-1450

1991

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Optimized selective mixing of a GaAs/GaAlAs quantum well for the fabrication of quantum wires

Journal of applied physics, 1992-05, Vol.71 (10), p.5012-5015

1992

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Microcavity polariton depopulation as evidence for stimulated scattering

Physical review. B, Condensed matter, 2000-12, Vol.62 (24), p.R16263-R16266

2000

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Annular resonant Rayleigh scattering in the picosecond dynamics of cavity polaritons

Physical review. B, Condensed matter, 1999-09, Vol.60 (12), p.R8509-R8512

1999

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InAs/GaAs quantum boxes obtained by self-organized growth: intrinsic electronic properties and applications

Solid-state electronics, 1996-01, Vol.40 (1-8), p.807-814

1996

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Structural and optical properties of high quality InAs/GaAs short-period superlattices grown by migration-enhanced epitaxy

Applied physics letters, 1989-01, Vol.54 (1), p.30-32

1989

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Luminescence investigations of highly strained-layer InAs-GaAs superlattices

Applied physics letters, 1986-05, Vol.48 (21), p.1476-1478

1986

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Self-organized growth of InAs/GaAs quantum boxes

Applied surface science, 1996-02, Vol.92 (1-4), p.526-531

1996

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Modulated molecular beam epitaxy: a successful route toward high quality highly strained heterostructures

Journal of crystal growth, 1991-05, Vol.111 (1), p.205-209

1991

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Strained multi-quantum well heterostructures for lasers, modulators and integrated optical devices at 1.3–1.55 μm

Materials science & engineering. B, Solid-state materials for advanced technology, 1994, Vol.28 (1), p.279-284

1994

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Photoluminescence of single InAs quantum dots obtained by self-organized growth on GaAs

Calculation of the energy levels in InAs/GaAs quantum dots

Time-resolved characterization of InAsP∕InP quantum dots emitting in the C-band telecommunication window

One-step nano-selective area growth (nano-SAG) of localized InAs/InP quantum dots: First step towards single-photon source applications

Quantum boxes as active probes for photonic microstructures: The pillar microcavity case

Infrared spectroscopy of intraband transitions in self-organized InAs/GaAs quantum dots

Physics informed and data-based augmented learning in structural health diagnosis

Growth by molecular beam epitaxy and characterization of InAs/GaAs strained-layer superlattices

Giant Rabi splitting in a microcavity containing distributed quantum wells

Nano-fabrication with focused ion beams

Hartree-like calculations of energy levels in quantum wires

Barrier strain influence on the high-speed properties of compressively strained InGaAsP multiquantum-well laser structures

High quality ultrathin InAs/GaAs quantum wells grown by standard and low-temperature modulated-fluxes molecular beam epitaxy

Optical investigation of the one-dimensional confinement effects in narrow GaAs/GaAlAs quantum wires

Microfabrication and optical study of reactive ion etched InGaAsP/InP and GaAs/GaAlAs quantum wires

Optical characterization of selectively intermixed GaAs/GaAlAs quantum wires by Ga+ masked implantation

Optimized selective mixing of a GaAs/GaAlAs quantum well for the fabrication of quantum wires

Microcavity polariton depopulation as evidence for stimulated scattering

Annular resonant Rayleigh scattering in the picosecond dynamics of cavity polaritons

InAs/GaAs quantum boxes obtained by self-organized growth: intrinsic electronic properties and applications

Structural and optical properties of high quality InAs/GaAs short-period superlattices grown by migration-enhanced epitaxy

Luminescence investigations of highly strained-layer InAs-GaAs superlattices

Self-organized growth of InAs/GaAs quantum boxes

Modulated molecular beam epitaxy: a successful route toward high quality highly strained heterostructures

Strained multi-quantum well heterostructures for lasers, modulators and integrated optical devices at 1.3–1.55 μm

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