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Silicon-Based Light-Emitting Devices Based on Ge Self-Assembled Quantum Dots Embedded in Optical Cavities

IEEE journal of selected topics in quantum electronics, 2012-11, Vol.18 (6), p.1830-1838

2012

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Surface Segregation Behavior of B, Ga, Sb, and As Dopant Atoms on Ge(100) and Ge(111) Examined with a First-principles Method

Journal of physics. Conference series, 2013-01, Vol.417 (1), p.12008-5

2013

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Angle-resolved photoelectron spectroscopy on gate insulators

Microelectronics and reliability, 2007, Vol.47 (1), p.20-26

2007

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Theoretical study of pressure-induced negative effective U of a tungsten atom in crystalline silicon

Physica. B, Condensed matter, 2001-12, Vol.308, p.424-426

2001

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Enhancement of light emission from Ge quantum dots by photonic crystal nanocavities at room-temperature

Journal of crystal growth, 2013-09, Vol.378, p.636-639

2013

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Light emission enhancement from Ge quantum dots with phosphorous δ-doped neighboring confinement structures

Journal of crystal growth, 2017-11, Vol.477, p.131-134

2017

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Light emission enhancement from Ge quantum dots with phosphorous d-doped neighboring confinement structures

Journal of crystal growth, 2017-11, Vol.477, p.131

2017

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Non-equilibrium molecular orbital calculations of Si/SiO2 interfaces

Thin solid films, 2000-07, Vol.369 (1-2), p.285-288

2000

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Activated boron and its concentration profiles in heavily doped Si studied by soft x-ray photoelectron spectroscopy and Hall measurements

Journal of applied physics, 2008-11, Vol.104 (9), p.093709-093709-5

2008

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Interface structures generated by negative-bias temperature instability in Si/SiO2 and Si/SiOxNy interfaces

Applied physics letters, 2002-09, Vol.81 (10), p.1818-1820

2002

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Electric-field dependence of negative-bias temperature instability

Journal of applied physics, 2005-04, Vol.97 (8), p.086101-086101-3

2005

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Theory of electron-mobility degradation caused by roughness with long correlation length in strained-silicon devices

Journal of applied physics, 2003-07, Vol.94 (1), p.465-470

2003

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New intrinsic pair defects in silicon dioxide interface

Applied surface science, 2003-06, Vol.216 (1), p.264-269

2003

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Simulation of dislocation accumulation in ULSI cells with STI structure

Applied surface science, 2003-06, Vol.216 (1), p.340-346

2003

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The role of hydrogen migration in negative-bias temperature instability

Applied surface science, 2003-06, Vol.216 (1), p.258-263

2003

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Incorporation of N into Si/SiO2 interfaces: Molecular orbital calculations to evaluate interface strain and heat of reaction

Applied physics letters, 1999-08, Vol.75 (5), p.680-682

1999

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Non-equilibrium molecular orbital calculations of Si/SiO sub(2) interfaces

Thin solid films, 2000-07, Vol.369 (1), p.285-288

2000

Volltextzugriff (PDF)

Non-equilibrium molecular orbital calculations of Si/SiO 2 interfaces

Thin solid films, 2000-07, Vol.369 (1-2), p.285-288

2000

Volltextzugriff (PDF)

Theoretical study of pressure-induced negative effective U of a tungsten atom in crystalline silicon

Physica. B, Condensed matter, 2001, Vol.308-10, p.424-426

2001

Volltextzugriff (PDF)

Surface segregation behavior of Ge in comparison with B, Ga, and Sb: calculations using a first-principles method

Journal of crystal growth, 1999-05, Vol.201, p.81-84

1999

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New analysis of heavily doped boron and arsenic in shallow junctions by X-ray photoelectron spectroscopy

ESSDERC 2008 - 38th European Solid-State Device Research Conference, 2008, p.142-145

2008

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Molecular orbital theory examination into improved gate oxide integrity through the incorporation of nitrogen and fluorine

Journal of non-crystalline solids, 1999-04, Vol.246 (1), p.73-82

1999

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Improvement of silicon dioxide integrity against hole-related breakdown with the incorporation of foreign atoms: molecular orbital examination

ICSD'98. Proceedings of the 1998 IEEE 6th International Conference on Conduction and Breakdown in Solid Dielectrics (Cat. No.98CH36132), 1998, p.257-260

1998

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Room-temperature photonic crystal nanocavity light emitting diodes based on Ge self-assembled quantum dots

2012 International Electron Devices Meeting, 2012, p.27.4.1-27.4.4

2012

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Characteristics of sodium ion-selective electrodes based on neutral carriers and their application to analysis of physiological fluids

Nippon Kagakukai shi (1972), 1992-09 (9), p.961-967

1992

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Silicon-Based Light-Emitting Devices Based on Ge Self-Assembled Quantum Dots Embedded in Optical Cavities

Surface Segregation Behavior of B, Ga, Sb, and As Dopant Atoms on Ge(100) and Ge(111) Examined with a First-principles Method

Angle-resolved photoelectron spectroscopy on gate insulators

Theoretical study of pressure-induced negative effective U of a tungsten atom in crystalline silicon

Enhancement of light emission from Ge quantum dots by photonic crystal nanocavities at room-temperature

Light emission enhancement from Ge quantum dots with phosphorous δ-doped neighboring confinement structures

Light emission enhancement from Ge quantum dots with phosphorous d-doped neighboring confinement structures

Non-equilibrium molecular orbital calculations of Si/SiO2 interfaces

Activated boron and its concentration profiles in heavily doped Si studied by soft x-ray photoelectron spectroscopy and Hall measurements

Interface structures generated by negative-bias temperature instability in Si/SiO2 and Si/SiOxNy interfaces

Electric-field dependence of negative-bias temperature instability

Theory of electron-mobility degradation caused by roughness with long correlation length in strained-silicon devices

New intrinsic pair defects in silicon dioxide interface

Simulation of dislocation accumulation in ULSI cells with STI structure

The role of hydrogen migration in negative-bias temperature instability

Incorporation of N into Si/SiO2 interfaces: Molecular orbital calculations to evaluate interface strain and heat of reaction

Non-equilibrium molecular orbital calculations of Si/SiO sub(2) interfaces

Non-equilibrium molecular orbital calculations of Si/SiO 2 interfaces

Theoretical study of pressure-induced negative effective U of a tungsten atom in crystalline silicon

Surface segregation behavior of Ge in comparison with B, Ga, and Sb: calculations using a first-principles method

New analysis of heavily doped boron and arsenic in shallow junctions by X-ray photoelectron spectroscopy

Molecular orbital theory examination into improved gate oxide integrity through the incorporation of nitrogen and fluorine

Improvement of silicon dioxide integrity against hole-related breakdown with the incorporation of foreign atoms: molecular orbital examination

Room-temperature photonic crystal nanocavity light emitting diodes based on Ge self-assembled quantum dots

Characteristics of sodium ion-selective electrodes based on neutral carriers and their application to analysis of physiological fluids

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