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Low Leakage-Current InAsSb Nanowire Photodetectors on Silicon

Nano letters, 2016-01, Vol.16 (1), p.182-187

2016

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Characterization of Below-Bandgap Absorption in Type II GaSb Quantum Dots in GaAs Solar Cells

Physics (Online), 2024-09, Vol.6 (3), p.990-998

2024

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Open-circuit voltage recovery in type II GaSb/GaAs quantum ring solar cells under high concentration

Progress in photovoltaics, 2015-12, Vol.23 (12), p.1896-1900

2015

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Impact Ionization in InAs Electron Avalanche Photodiodes

IEEE transactions on electron devices, 2010-10, Vol.57 (10), p.2631-2638

2010

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Room-temperature Operation of Low-voltage, Non-volatile, Compound-semiconductor Memory Cells

Scientific reports, 2019-06, Vol.9 (1), p.8950-8, Article 8950

2019

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Room-Temperature Mid-Infrared Emission from Faceted InAsSb Multi Quantum Wells Embedded in InAs Nanowires

Nano letters, 2018-01, Vol.18 (1), p.235-240

2018

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Impact Ionization Coefficients in 4H-SiC by Ultralow Excess Noise Measurement

IEEE transactions on electron devices, 2012-04, Vol.59 (4), p.1030-1036

2012

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Heteroepitaxial Integration of Mid-Infrared InAsSb Light Emitting Diodes on Silicon

IEEE photonics journal, 2019-06, Vol.11 (3), p.1-8

2019

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Resonant cavity-enhanced photodetector incorporating a type-II superlattice to extend MWIR sensitivity

Optics express, 2019-08, Vol.27 (17), p.23970-23980

2019

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Temperature Dependence of Leakage Current in InAs Avalanche Photodiodes

IEEE journal of quantum electronics, 2011-08, Vol.47 (8), p.1123-1128

2011

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Resonant cavity-enhanced photodiode array for miniaturised spectroscopic sensing

Optics express, 2022-01, Vol.30 (3), p.3230-3237

2022

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Resonant cavity enhanced InAs/GaAsSb SLS LEDs with a narrow spectral linewidth and a high-spectral intensity operating at 4.6 μm

Applied physics letters, 2023-11, Vol.123 (20)

2023

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Mid-Infrared InAs/InAsSb Superlattice nBn Photodetector Monolithically Integrated onto Silicon

ACS photonics, 2019-02, Vol.6 (2), p.538-544

2019

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Resonant Cavity–Enhanced Photodiodes for Spectroscopy of CH Bonds

Physica status solidi. A, Applications and materials science, 2021-09, Vol.218 (17), p.n/a

2021

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Resonant Cavity Enhanced Photodiodes in the Short-Wave Infrared for Spectroscopic Detection

IEEE photonics technology letters, 2020-11, Vol.32 (21), p.1369-1372

2020

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Mid-infrared resonant cavity light emitting diodes operating at 4.5 µm

Optics express, 2020-08, Vol.28 (16), p.23338-23353

2020

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Hole capture and emission dynamics of type-II GaSb/GaAs quantum ring solar cells

Solar energy materials and solar cells, 2019-01, Vol.189, p.233-238

2019

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High speed InAs electron avalanche photodiodes overcome the conventional gain-bandwidth product limit

Optics express, 2011-11, Vol.19 (23), p.23341-23349

2011

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III-V semiconductor extended short-wave infrared detectors

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2017-03, Vol.35 (2)

2017

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Carrier extraction behaviour in type II GaSb GaAs quantum ring solar cells

Semiconductor science and technology, 2014-03, Vol.29 (3), p.35014

2014

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Carrier extraction from GaSb quantum rings in GaAs solar cells using direct laser excitation

IET optoelectronics, 2014-04, Vol.8 (2), p.76-80

2014

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Electroluminescence enhancement in mid-infrared InAsSb resonant cavity light emitting diodes for CO2 detection

Applied physics letters, 2019-04, Vol.114 (17)

2019

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Optical properties of metamorphic type-I InAs1−xSbx/Aly In1−y As quantum wells grown on GaAs for the mid-infrared spectral range

Journal of physics. D, Applied physics, 2019-11, Vol.52 (46)

2019

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Optical properties of metamorphic type-I InAs 1−x Sb x /Al y In 1−y As quantum wells grown on GaAs for the mid-infrared spectral range

Journal of physics. D, Applied physics, 2019-11, Vol.52 (46), p.465102

2019

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Extremely Low Excess Noise in InAs Electron Avalanche Photodiodes

IEEE photonics technology letters, 2009-07, Vol.21 (13), p.866-868

2009

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Low Leakage-Current InAsSb Nanowire Photodetectors on Silicon

Characterization of Below-Bandgap Absorption in Type II GaSb Quantum Dots in GaAs Solar Cells

Open-circuit voltage recovery in type II GaSb/GaAs quantum ring solar cells under high concentration

Impact Ionization in InAs Electron Avalanche Photodiodes

Room-temperature Operation of Low-voltage, Non-volatile, Compound-semiconductor Memory Cells

Room-Temperature Mid-Infrared Emission from Faceted InAsSb Multi Quantum Wells Embedded in InAs Nanowires

Impact Ionization Coefficients in 4H-SiC by Ultralow Excess Noise Measurement

Heteroepitaxial Integration of Mid-Infrared InAsSb Light Emitting Diodes on Silicon

Resonant cavity-enhanced photodetector incorporating a type-II superlattice to extend MWIR sensitivity

Temperature Dependence of Leakage Current in InAs Avalanche Photodiodes

Resonant cavity-enhanced photodiode array for miniaturised spectroscopic sensing

Resonant cavity enhanced InAs/GaAsSb SLS LEDs with a narrow spectral linewidth and a high-spectral intensity operating at 4.6 μm

Mid-Infrared InAs/InAsSb Superlattice nBn Photodetector Monolithically Integrated onto Silicon

Resonant Cavity–Enhanced Photodiodes for Spectroscopy of CH Bonds

Resonant Cavity Enhanced Photodiodes in the Short-Wave Infrared for Spectroscopic Detection

Mid-infrared resonant cavity light emitting diodes operating at 4.5 µm

Hole capture and emission dynamics of type-II GaSb/GaAs quantum ring solar cells

High speed InAs electron avalanche photodiodes overcome the conventional gain-bandwidth product limit

III-V semiconductor extended short-wave infrared detectors

Carrier extraction behaviour in type II GaSb GaAs quantum ring solar cells

Carrier extraction from GaSb quantum rings in GaAs solar cells using direct laser excitation

Electroluminescence enhancement in mid-infrared InAsSb resonant cavity light emitting diodes for CO2 detection

Optical properties of metamorphic type-I InAs1−xSbx/Aly In1−y As quantum wells grown on GaAs for the mid-infrared spectral range

Optical properties of metamorphic type-I InAs 1−x Sb x /Al y In 1−y As quantum wells grown on GaAs for the mid-infrared spectral range

Extremely Low Excess Noise in InAs Electron Avalanche Photodiodes

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