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Advanced Heterojunction Bipolar Transistor for Half-THz SiGe BiCMOS Technology

IEEE electron device letters, 2015-07, Vol.36 (7), p.642-644

2015

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Etch mechanism of an Al2O3 hard mask in the Bosch process

Micro and Nano Engineering, 2022-04, Vol.14, p.100102, Article 100102

2022

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Spectroscopic reflectometry for characterization of Through Silicon Via profile of Bosch etching process

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2019-11, Vol.37 (6)

2019

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(Invited) Advancing Si Spin Qubit Research: Process Integration of Hall Bar FETs on Si/SiGe in a 200mm BiCMOS Pilot Line

ECS transactions, 2024-09, Vol.114 (2), p.109-121

2024

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Integration Aspects of Plasmonic TiN-based Nano-Hole-Arrays on Ge Photodetectorsin a 200mm Wafer CMOS Compatible Silicon Technology

ECS transactions, 2022-09, Vol.109 (4), p.35-46

2022

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Characterization of Nanometer‐Sized Oxygen Precipitates in Highly B‐Doped Czochralski Silicon

Physica status solidi. C, 2017-12, Vol.14 (12), p.n/a

2017

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(Invited) Optimized HfO 2 -Based MIM Module Fabrication for Emerging Memory Applications

ECS transactions, 2019-07, Vol.92 (4), p.211-221

2019

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Recent Developments on SiGe BiCMOS Technologies for mm-wave and THz Applications

2019 IEEE MTT-S International Microwave Symposium (IMS), 2019, p.1126-1129

2019

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Deep-UV Technology for the Fabrication of Bragg Gratings on SOI Rib Waveguides

IEEE photonics technology letters, 2009-12, Vol.21 (24), p.1894-1896

2009

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A Sub-Atmospheric Chemical Vapor Deposition Process for Deposition of Oxide Liner in High Aspect Ratio Through Silicon Vias

Journal of nanoscience and nanotechnology, 2011-09, Vol.11 (9), p.8061-8067

2011

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SiGe p-n-p HBTs With 265-GHz fmax, 175-GHz fT, and 3.65-ps Gate Delay

IEEE electron device letters, 2014, Vol.35 (8), p.814-816

2014

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SiGe p-n-p HBTs With 265-GHz f max, 175-GHz f T, and 3.65-ps Gate Delay

IEEE electron device letters, 2014-08, Vol.35 (8), p.814-816

2014

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(Invited) Si 1-x Ge x /Si MQW Based Uncooled Microbolometer Development and Integration into 130 nm BiCMOS Technology

ECS transactions, 2018-07, Vol.86 (7), p.373-383

2018

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(Invited) Combining SiGe BiCMOS and InP Processing in an on-top of Chip Integration Approach

ECS transactions, 2014, Vol.64 (6), p.177-194

2014

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Sub-Atmospheric Chemical Vapor Deposition of SiO 2 for Dielectric Layers in High Aspect Ratio TSVs

ECS transactions, 2011-04, Vol.35 (2), p.95-104

2011

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BiCMOS BEOL Coupon Fabrication and Micro Transfer Printing for Heterogeneous Integration Applications

2024 IEEE 10th Electronics System-Integration Technology Conference (ESTC), 2024, p.1-4

2024

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A 0.13 mu hbox m SiGe BiCMOS Technology Featuring f T /f max of 240/330 GHz and Gate Delays Below 3 ps

IEEE journal of solid-state circuits, 2010-09, Vol.45 (9), p.1678-1686

2010

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A 0.13 [Formula Omitted] SiGe BiCMOS Technology Featuring f[Formula Omitted]/f[Formula Omitted] of 240/330 GHz and Gate Delays Below 3 ps

IEEE journal of solid-state circuits, 2010-09, Vol.45 (9), p.1678

2010

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BiCMOS Through-Silicon Via (TSV) Signal Transition at 240/300 GHz for MM-Wave & Sub-THz Packaging and Heterogeneous Integration

2020 50th European Microwave Conference (EuMC), 2021, p.244-247

2021

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A 0.13 \mu} SiGe BiCMOS Technology Featuring f /f of 240/330 GHz and Gate Delays Below 3 ps

IEEE journal of solid-state circuits, 2010-09, Vol.45 (9), p.1678-1686

2010

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A 0.13 μm SiGe BiCMOS Technology Featuring fT/fmax of 240/330 GHz and Gate Delays Below 3 ps : The 23rd bipolar/BICMOS circuits and technology meeting

IEEE journal of solid-state circuits, 2010, Vol.45 (9), p.1678-1686

2010

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Integration Aspects of Plasmonic TiN-based Nano-Hole-Arrays on Ge Photodetectorsin a 200mm Wafer CMOS Compatible Silicon Technology

Meeting abstracts (Electrochemical Society), 2022-10, Vol.MA2022-02 (32), p.1174-1174

2022

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SiGe BiCMOS Technology with Embedded Through-Silicon Vias and Interposer Fan-Out Wafer-level Packaging Platform

2019 European Microwave Conference in Central Europe (EuMCE), 2019, p.332-335

2019

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(Invited) Optimized HfO 2 -Based MIM Module Fabrication for Emerging Memory Applications

Meeting abstracts (Electrochemical Society), 2019-09, Vol.MA2019-02 (25), p.1194-1194

2019

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Development of a Through-Silicon Via (TSV) Process Module for Multi-project Wafer SiGe BiCMOS and Silicon Interposer

2018 IEEE 68th Electronic Components and Technology Conference (ECTC), 2018, p.2267-2274

2018

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Advanced Heterojunction Bipolar Transistor for Half-THz SiGe BiCMOS Technology

Etch mechanism of an Al2O3 hard mask in the Bosch process

Spectroscopic reflectometry for characterization of Through Silicon Via profile of Bosch etching process

(Invited) Advancing Si Spin Qubit Research: Process Integration of Hall Bar FETs on Si/SiGe in a 200mm BiCMOS Pilot Line

Integration Aspects of Plasmonic TiN-based Nano-Hole-Arrays on Ge Photodetectorsin a 200mm Wafer CMOS Compatible Silicon Technology

Characterization of Nanometer‐Sized Oxygen Precipitates in Highly B‐Doped Czochralski Silicon

(Invited) Optimized HfO 2 -Based MIM Module Fabrication for Emerging Memory Applications

Recent Developments on SiGe BiCMOS Technologies for mm-wave and THz Applications

Deep-UV Technology for the Fabrication of Bragg Gratings on SOI Rib Waveguides

A Sub-Atmospheric Chemical Vapor Deposition Process for Deposition of Oxide Liner in High Aspect Ratio Through Silicon Vias

SiGe p-n-p HBTs With 265-GHz fmax, 175-GHz fT, and 3.65-ps Gate Delay

SiGe p-n-p HBTs With 265-GHz f max, 175-GHz f T, and 3.65-ps Gate Delay

(Invited) Si 1-x Ge x /Si MQW Based Uncooled Microbolometer Development and Integration into 130 nm BiCMOS Technology

(Invited) Combining SiGe BiCMOS and InP Processing in an on-top of Chip Integration Approach

Sub-Atmospheric Chemical Vapor Deposition of SiO 2 for Dielectric Layers in High Aspect Ratio TSVs

BiCMOS BEOL Coupon Fabrication and Micro Transfer Printing for Heterogeneous Integration Applications

A 0.13 mu hbox m SiGe BiCMOS Technology Featuring f T /f max of 240/330 GHz and Gate Delays Below 3 ps

A 0.13 [Formula Omitted] SiGe BiCMOS Technology Featuring f[Formula Omitted]/f[Formula Omitted] of 240/330 GHz and Gate Delays Below 3 ps

BiCMOS Through-Silicon Via (TSV) Signal Transition at 240/300 GHz for MM-Wave & Sub-THz Packaging and Heterogeneous Integration

A 0.13 \mu} SiGe BiCMOS Technology Featuring f /f of 240/330 GHz and Gate Delays Below 3 ps

A 0.13 μm SiGe BiCMOS Technology Featuring fT/fmax of 240/330 GHz and Gate Delays Below 3 ps : The 23rd bipolar/BICMOS circuits and technology meeting

Integration Aspects of Plasmonic TiN-based Nano-Hole-Arrays on Ge Photodetectorsin a 200mm Wafer CMOS Compatible Silicon Technology

SiGe BiCMOS Technology with Embedded Through-Silicon Vias and Interposer Fan-Out Wafer-level Packaging Platform

(Invited) Optimized HfO 2 -Based MIM Module Fabrication for Emerging Memory Applications

Development of a Through-Silicon Via (TSV) Process Module for Multi-project Wafer SiGe BiCMOS and Silicon Interposer

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