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Mutual passivation of electrically active and isovalent impurities

Nature materials, 2002-11, Vol.1 (3), p.185-189

2002

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Design and analysis of double-fused 1.55-μm vertical-cavity lasers

IEEE journal of quantum electronics, 1997-08, Vol.33 (8), p.1369-1383

1997

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Low-resistance tunnel junctions on GaAs substrates using GaInNAs

Applied physics letters, 2004-04, Vol.84 (14), p.2560-2562

2004

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Second-harmonic generation from GaAs/AlAs vertical cavity

Applied physics letters, 1995-04, Vol.66 (17), p.2159-2161

1995

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Mutual passivation of group IV donors and isovalent nitrogen in diluted GaNxAs1−x alloys

Physica. B, Condensed matter, 2003-12, Vol.340-342, p.389-393

2003

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Anomalies in MODFET's with a low-temperature buffer

IEEE transactions on electron devices, 1990-01, Vol.37 (1), p.46-50

1990

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Redox potentials in relation to water levels in different mire types in the Netherlands and Poland

Plant ecology, 1999, Vol.140 (1), p.41-51

1999

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InGaAs/GaAs vertical-cavity surface-emitting lasers on (311)B GaAs substrate

Electronics letters, 1995-05, Vol.31 (10), p.805-806

1995

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Mutual passivation of group IV donors and nitrogen in diluted GaNxAs1−x alloys

Applied physics letters, 2003-10, Vol.83 (14), p.2844-2846

2003

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A 50 GHz broad-band monolithic GaAs/AlAs resonant tunneling diode trigger circuit

IEEE journal of solid-state circuits, 1994-05, Vol.29 (5), p.585-595, Article 585

1994

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Microwave switch: LAMPS (light-activated microwave photoconductive switch)

Electronics letters, 2003-06, Vol.39 (12), p.917

2003

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Enhancement of nonradiative interface recombination in GaAs coupled quantum wells

Journal of applied physics, 1990, Vol.67 (1), p.434-438

1990

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InGaAs(0.98 μm)/GaAs vertical cavity surface emitting laser grown by gas-source molecular beam epitaxy

Journal of crystal growth, 1994-03, Vol.136 (1), p.216-220

1994

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Zero-field time-of-flight characterization of minority-carrier transport in heavily carbon-doped GaAs

Journal of applied physics, 1993-06, Vol.73 (11), p.7471-7477

1993

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Polymorphisms in the vitamin D receptor gene are associated with muscle strength in men and women

Osteoporosis international, 2007-09, Vol.18 (9), p.1235-1242

2007

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Space-charge recombination in N-AlGaAs/p+-GaAs heterojunction diodes

Applied physics letters, 1989-12, Vol.55 (23), p.2423-2425

1989

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Inequivalent impurity and trap incorporation at normal and inverted interfaces of AlGaAs/ GaAs quantum wells grown by molecular beam epitaxy

Applied physics letters, 1990-09, Vol.57 (10), p.1025-1027

1990

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A 23.6 GHz sub-half-micrometer E/D MODFET divide-by-32/64 static prescaler

IEEE journal of solid-state circuits, 1992-10, Vol.27 (10), p.1353-1358

1992

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Fabrication of GaNxAs1-x Quantum Structures by Focused Ion Beam Patterning

Physics of Semiconductors; Part A, 2005, Vol.772, p.223-224

2005

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Reduction of trap concentration and interface roughness of GaAs-AlGaAs quantum wells by low growth rates in molecular beam epitaxy

Applied physics letters, 1989-07, Vol.55 (1), p.50-52

1989

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Growth of high-quality p -type GaAs epitaxial layers using carbon tetrabromide by gas source molecular-beam epitaxy and molecular-beam epitaxy

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 1993-05, Vol.11 (3), p.915-918

1993

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Mutual Passivation in Dilute GaNxAs1-x Alloys

MRS proceedings, 2005, Vol.864

2005

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Analysis of wafer fusing for 1.3 μm vertical cavity surface emitting lasers

Applied physics letters, 1993-05, Vol.62 (20), p.2474-2476

1993

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Binary AlAs/GaAs versus ternary GaAlAs/GaAs interfaces: A dramatic difference of perfection

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 1992-07, Vol.10 (4), p.1793-1798

1992

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Growth of vertical cavity surface emitting laser material on (3 1 1)B GaAs by MBE

Journal of crystal growth, 1997-05, Vol.175-176, p.365-371

1997

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Mutual passivation of electrically active and isovalent impurities

Design and analysis of double-fused 1.55-μm vertical-cavity lasers

Low-resistance tunnel junctions on GaAs substrates using GaInNAs

Second-harmonic generation from GaAs/AlAs vertical cavity

Mutual passivation of group IV donors and isovalent nitrogen in diluted GaNxAs1−x alloys

Anomalies in MODFET's with a low-temperature buffer

Redox potentials in relation to water levels in different mire types in the Netherlands and Poland

InGaAs/GaAs vertical-cavity surface-emitting lasers on (311)B GaAs substrate

Mutual passivation of group IV donors and nitrogen in diluted GaNxAs1−x alloys

A 50 GHz broad-band monolithic GaAs/AlAs resonant tunneling diode trigger circuit

Microwave switch: LAMPS (light-activated microwave photoconductive switch)

Enhancement of nonradiative interface recombination in GaAs coupled quantum wells

InGaAs(0.98 μm)/GaAs vertical cavity surface emitting laser grown by gas-source molecular beam epitaxy

Zero-field time-of-flight characterization of minority-carrier transport in heavily carbon-doped GaAs

Polymorphisms in the vitamin D receptor gene are associated with muscle strength in men and women

Space-charge recombination in N-AlGaAs/p+-GaAs heterojunction diodes

Inequivalent impurity and trap incorporation at normal and inverted interfaces of AlGaAs/ GaAs quantum wells grown by molecular beam epitaxy

A 23.6 GHz sub-half-micrometer E/D MODFET divide-by-32/64 static prescaler

Fabrication of GaNxAs1-x Quantum Structures by Focused Ion Beam Patterning

Reduction of trap concentration and interface roughness of GaAs-AlGaAs quantum wells by low growth rates in molecular beam epitaxy

Growth of high-quality p -type GaAs epitaxial layers using carbon tetrabromide by gas source molecular-beam epitaxy and molecular-beam epitaxy

Mutual Passivation in Dilute GaNxAs1-x Alloys

Analysis of wafer fusing for 1.3 μm vertical cavity surface emitting lasers

Binary AlAs/GaAs versus ternary GaAlAs/GaAs interfaces: A dramatic difference of perfection

Growth of vertical cavity surface emitting laser material on (3 1 1)B GaAs by MBE

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