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Resistive switching and synaptic properties of fully atomic layer deposition grown TiN/HfO2/TiN devices

Journal of applied physics, 2015-01, Vol.117 (4)

2015

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On Splitting of Separatrices Corresponding to the Operating Mode of the Watt Governor

Mechanics of solids, 2023-12, Vol.58 (8), p.2731-2737

Markeev, A. P.

2023

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On Resonance Values of Parameters in the Problem of Stability of Lagrange Solutions in a Restricted Three-Body Problem Close to a Circle

Mechanics of solids, 2023-09, Vol.58 (7), p.2531-2543

Markeev, A. P.

2023

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On the Nonlinear Oscillations of a Triaxial Ellipsoid on a Smooth Horizontal Plane

Mechanics of solids, 2022-12, Vol.57 (8), p.1805-1818

Markeev, A. P.

2022

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Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks

Applied physics letters, 2016-06, Vol.108 (24)

2016

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Memristor with a ferroelectric HfO2 layer: in which case it is a ferroelectric tunnel junction

Nanotechnology, 2020-05, Vol.31 (21), p.215205-215205

2020

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On the Stability of Lagrange Solutions in the Spatial Near-Circular Restricted Three-Body Problem

Mechanics of solids, 2021-12, Vol.56 (8), p.1541-1549

Markeev, A. P.

2021

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Action–Angle Variables in a Particular Case of the Restricted Three-Body Problem

Doklady. a journal of the Russian Academy of Sciences. Physics, 2020-03, Vol.65 (3), p.103-108

Markeev, A. P.

2020

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Subharmonic Oscillations in the Near-Circular Elliptic Sitnikov Problem

Mechanics of solids, 2020-12, Vol.55 (8), p.1162-1171

Markeev, A. P.

2020

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Chemical and electronic properties of interfaces between RuO2 and Hf0.5Zr0.5O2 studied by x-ray photoelectron spectroscopy

Applied physics letters, 2023-01, Vol.122 (2)

2023

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EVOLUTION OF MOTION OF A SOLID SUSPENDED ON A THREAD IN A HOMOGENEOUS GRAVITY FIELD

Mechanics of solids, 2021-05, Vol.56 (3), p.320-325

Markeev, A. P.

2021

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On the Stability of Steady Rotation of a Satellite around the Normal to the Orbital Plane

Mechanics of solids, 2020-09, Vol.55 (7), p.947-957

Markeev, A. P.

2020

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Subharmonic Motions of a Pendulum on a Movable Platform

Doklady. a journal of the Russian Academy of Sciences. Physics, 2019-06, Vol.64 (6), p.258-263

Markeev, A. P.

2019

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Influence of ALD Ru bottom electrode on ferroelectric properties of Hf0.5Zr0.5O2-based capacitors

Applied physics letters, 2020-11, Vol.117 (19)

2020

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Confinement-free annealing induced ferroelectricity in Hf0.5Zr0.5O2 thin films

Microelectronic engineering, 2015-11, Vol.147, p.15-18

2015

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Electron transport across ultrathin ferroelectric Hf0.5Zr0.5O2 films on Si

Microelectronic engineering, 2017-06, Vol.178, p.250-253

2017

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The Stability of Relative Equilibrium Positions of a Pendulum on a Mobile Platform

Doklady. a journal of the Russian Academy of Sciences. Physics, 2018-10, Vol.63 (10), p.441-445

Markeev, A. P.

2018

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Stability in the Regular Precession of an Asymmetrical Gyroscope in the Critical Case of Fourth-Order Resonance

Doklady. a journal of the Russian Academy of Sciences. Physics, 2018-07, Vol.63 (7), p.297-301

Markeev, A. P.

2018

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On the Accuracy Problem for Pendulum Clock on a Vibrating Base

Mechanics of solids, 2018-09, Vol.53 (5), p.573-583

Markeev, A. P.

2018

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Full ALD Ta2O5-based stacks for resistive random access memory grown with in vacuo XPS monitoring

Applied surface science, 2015-11, Vol.356, p.454-459

2015

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Watt regulator dynamics

Doklady. a journal of the Russian Academy of Sciences. Physics, 2017-12, Vol.62 (12), p.538-542

Markeev, A. P.

2017

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On the Stability of the Regular Grioli Precession in a Particular Case

Mechanics of solids, 2018-12, Vol.53 (Suppl 2), p.1-14

Markeev, A. P.

2018

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A pendulum on a rotating and vibrating foundation

Doklady. a journal of the Russian Academy of Sciences. Physics, 2017-12, Vol.62 (12), p.555-559

Markeev, A. P.

2017

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Atomic Layer Deposition of La:Hf0.5Zr0.5O2 Thin Films with Abnormally High Dielectric Permittivity for Memory and Logic Devices

Russian journal of applied chemistry, 2023-05, Vol.96 (5), p.579-587

2023

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Ferroelectric properties of lightly doped La:HfO2 thin films grown by plasma-assisted atomic layer deposition

Applied physics letters, 2017-09, Vol.111 (13)

2017

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Resistive switching and synaptic properties of fully atomic layer deposition grown TiN/HfO2/TiN devices

On Splitting of Separatrices Corresponding to the Operating Mode of the Watt Governor

On Resonance Values of Parameters in the Problem of Stability of Lagrange Solutions in a Restricted Three-Body Problem Close to a Circle

On the Nonlinear Oscillations of a Triaxial Ellipsoid on a Smooth Horizontal Plane

Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks

Memristor with a ferroelectric HfO2 layer: in which case it is a ferroelectric tunnel junction

On the Stability of Lagrange Solutions in the Spatial Near-Circular Restricted Three-Body Problem

Action–Angle Variables in a Particular Case of the Restricted Three-Body Problem

Subharmonic Oscillations in the Near-Circular Elliptic Sitnikov Problem

Chemical and electronic properties of interfaces between RuO2 and Hf0.5Zr0.5O2 studied by x-ray photoelectron spectroscopy

EVOLUTION OF MOTION OF A SOLID SUSPENDED ON A THREAD IN A HOMOGENEOUS GRAVITY FIELD

On the Stability of Steady Rotation of a Satellite around the Normal to the Orbital Plane

Subharmonic Motions of a Pendulum on a Movable Platform

Influence of ALD Ru bottom electrode on ferroelectric properties of Hf0.5Zr0.5O2-based capacitors

Confinement-free annealing induced ferroelectricity in Hf0.5Zr0.5O2 thin films

Electron transport across ultrathin ferroelectric Hf0.5Zr0.5O2 films on Si

The Stability of Relative Equilibrium Positions of a Pendulum on a Mobile Platform

Stability in the Regular Precession of an Asymmetrical Gyroscope in the Critical Case of Fourth-Order Resonance

On the Accuracy Problem for Pendulum Clock on a Vibrating Base

Full ALD Ta2O5-based stacks for resistive random access memory grown with in vacuo XPS monitoring

Watt regulator dynamics

On the Stability of the Regular Grioli Precession in a Particular Case

A pendulum on a rotating and vibrating foundation

Atomic Layer Deposition of La:Hf0.5Zr0.5O2 Thin Films with Abnormally High Dielectric Permittivity for Memory and Logic Devices

Ferroelectric properties of lightly doped La:HfO2 thin films grown by plasma-assisted atomic layer deposition

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