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Determination of the Diameter and Depth of Substance Ablation Craters during Nanosecond Laser Pulses Using Computer Modeling

Physics of atomic nuclei, 2022-12, Vol.85 (11), p.1913-1919

2022

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Study of MIS structures based on CdHgTe and HfO2 applied by PEALD

Applied physics letters, 2022-08, Vol.121 (8)

2022

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Optical probing of extended defects in CdTe virtual substrates via isolated emitters produced by weakly perturbed fragments of partial dislocations

Applied physics letters, 2019-12, Vol.115 (23)

2019

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Electrical profiling of arsenic-implanted HgCdTe films performed with discrete mobility spectrum analysis

Semiconductor science and technology, 2019-03, Vol.34 (3), p.35009

2019

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Electrical and microscopic characterization of p+-type layers formed in HgCdTe by arsenic implantation

Semiconductor science and technology, 2020-11, Vol.35 (11), p.115019

2020

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Investigation of the Effect of Thermal Annealing on the Electrical Properties of the Near-Surface Layer of MBE n-HgCdTe Using MIS Techniques

Journal of electronic materials, 2020-05, Vol.49 (5), p.3202-3208

2020

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Influence of As+ Ion Implantation on Properties of MBE HgCdTe Near-Surface Layer Characterized by Metal–Insulator–Semiconductor Techniques

Journal of electronic materials, 2021-04, Vol.50 (4), p.2323-2330

2021

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Investigation of the Temperature Dependence of the Spectra of Optical Constants of Hg1 – xCdхTe Films Grown Using Molecular Beam Epitaxy

Optics and spectroscopy, 2021, Vol.129 (1), p.29-36

2021

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Formation of Ge and GeSi nanocrystals in GeOx/SiO2 multilayers

Journal of physics. D, Applied physics, 2013-07, Vol.46 (27)

2013

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Parametric Model of the Optical Constant Spectra of Hg1 – xCdxTe and Determination of the Compound Composition

Optics and spectroscopy, 2020-12, Vol.128 (12), p.1948-1953

2020

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Applying an improved phonon confinement model to the analysis of Raman spectra of germanium nanocrystals

Journal of experimental and theoretical physics, 2014, Vol.118 (1), p.65-71

2014

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Wet Chemical Methods of HgCdTe Surface Treatment

Journal of structural chemistry, 2023-03, Vol.64 (3), p.519-527

2023

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Photoluminescence of Molecular Beam Epitaxy-Grown Mercury Cadmium Telluride: Comparison of HgCdTe/GaAs and HgCdTe/Si Technologies

Journal of electronic materials, 2018-08, Vol.47 (8), p.4731-4736

2018

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The Effect of the Growth Temperature on the Passivating Properties of the Al2O3 Films Formed by Atomic Layer Deposition on the CdHgTe Surface

Technical physics letters, 2020-08, Vol.46 (8), p.741-744

2020

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The Effect of As+ Ion Implantation and Annealing on the Electrical Properties of Near-Surface Layers in Graded-Gap n-Hg0.78Cd0.22Te Films

Technical physics letters, 2021-02, Vol.47 (2), p.189-192

2021

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A Megapixel Matrix Photodetector of the Middle Infrared Range

Journal of communications technology & electronics, 2019-09, Vol.64 (9), p.1011-1015

2019

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Ellipsometric Method for Measuring the CdTe Buffer-Layer Temperature in the Molecular-Beam Epitaxy of CdHgTe

Semiconductors (Woodbury, N.Y.), 2019-01, Vol.53 (1), p.132-137

2019

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Nano-scale structural studies of defects in arsenic-implanted n and p-type HgCdTe films

Applied nanoscience, 2022-03, Vol.12 (3), p.395-401

2022

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Distribution profiles of radiation donor defects in arsenic-implanted HgCdTe films

Journal of physics. Conference series, 2018-11, Vol.1115 (3), p.32063

2018

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HgCdTe-Based 640 × 512 Matrix Midwave Infrared Photodetector

Journal of communications technology & electronics, 2020-03, Vol.65 (3), p.316-320

2020

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Nano-size defects in arsenic-implanted HgCdTe films: a HRTEM study

Applied nanoscience, 2019-07, Vol.9 (5), p.725-730

2019

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HgCdTe p+-n structures grown by MBE on Si (013) substrates for high operating temperature SWIR detectors

Physica status solidi. C, 2016-07, Vol.13 (7-9), p.651-655

2016

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Acceptor states and carrier lifetime in heteroepitaxial HgCdTe-on-Si for mid-infrared photodetectors

Journal of physics. Conference series, 2015-11, Vol.643 (1), p.12004

2015

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Methodological and instrumental problems in high-precision in situ ellipsometry diagnostics of the mercury cadmium telluride layer composition in molecular beam epitaxy

Instruments and experimental techniques (New York), 2016-11, Vol.59 (6), p.857-864

2016

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CdHgTe heterostructures for new-generation IR photodetectors operating at elevated temperatures

Semiconductors (Woodbury, N.Y.), 2016-12, Vol.50 (12), p.1626-1629

2016

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Determination of the Diameter and Depth of Substance Ablation Craters during Nanosecond Laser Pulses Using Computer Modeling

Study of MIS structures based on CdHgTe and HfO2 applied by PEALD

Optical probing of extended defects in CdTe virtual substrates via isolated emitters produced by weakly perturbed fragments of partial dislocations

Electrical profiling of arsenic-implanted HgCdTe films performed with discrete mobility spectrum analysis

Electrical and microscopic characterization of p+-type layers formed in HgCdTe by arsenic implantation

Investigation of the Effect of Thermal Annealing on the Electrical Properties of the Near-Surface Layer of MBE n-HgCdTe Using MIS Techniques

Influence of As+ Ion Implantation on Properties of MBE HgCdTe Near-Surface Layer Characterized by Metal–Insulator–Semiconductor Techniques

Investigation of the Temperature Dependence of the Spectra of Optical Constants of Hg1 – xCdхTe Films Grown Using Molecular Beam Epitaxy

Formation of Ge and GeSi nanocrystals in GeOx/SiO2 multilayers

Parametric Model of the Optical Constant Spectra of Hg1 – xCdxTe and Determination of the Compound Composition

Applying an improved phonon confinement model to the analysis of Raman spectra of germanium nanocrystals

Wet Chemical Methods of HgCdTe Surface Treatment

Photoluminescence of Molecular Beam Epitaxy-Grown Mercury Cadmium Telluride: Comparison of HgCdTe/GaAs and HgCdTe/Si Technologies

The Effect of the Growth Temperature on the Passivating Properties of the Al2O3 Films Formed by Atomic Layer Deposition on the CdHgTe Surface

The Effect of As+ Ion Implantation and Annealing on the Electrical Properties of Near-Surface Layers in Graded-Gap n-Hg0.78Cd0.22Te Films

A Megapixel Matrix Photodetector of the Middle Infrared Range

Ellipsometric Method for Measuring the CdTe Buffer-Layer Temperature in the Molecular-Beam Epitaxy of CdHgTe

Nano-scale structural studies of defects in arsenic-implanted n and p-type HgCdTe films

Distribution profiles of radiation donor defects in arsenic-implanted HgCdTe films

HgCdTe-Based 640 × 512 Matrix Midwave Infrared Photodetector

Nano-size defects in arsenic-implanted HgCdTe films: a HRTEM study

HgCdTe p+-n structures grown by MBE on Si (013) substrates for high operating temperature SWIR detectors

Acceptor states and carrier lifetime in heteroepitaxial HgCdTe-on-Si for mid-infrared photodetectors

Methodological and instrumental problems in high-precision in situ ellipsometry diagnostics of the mercury cadmium telluride layer composition in molecular beam epitaxy

CdHgTe heterostructures for new-generation IR photodetectors operating at elevated temperatures

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