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High spatial resolution grain orientation and strain mapping in thin films using polychromatic submicron x-ray diffraction

Applied physics letters, 2002-05, Vol.80 (20), p.3724-3726

2002

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Local plasticity of Al thin films as revealed by x-ray microdiffraction

Physical review letters, 2003-03, Vol.90 (9), p.096102-096102, Article 096102

2003

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Electromigration lifetime and critical void volume

Applied physics letters, 2004-11, Vol.85 (20), p.4639-4641

2004

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Observations of electromigration induced void nucleation and growth in polycrystalline and near-bamboo passivated Al lines

Journal of applied physics, 1995-07, Vol.78 (2), p.1026-1032

1995

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Effects of dielectric materials on electromigration failure

Journal of applied physics, 2001-06, Vol.89 (12), p.7797-7808

2001

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Mechanical behaviour of submicron multilayers submitted to microtensile experiments

Thin solid films, 1999-09, Vol.353 (1), p.201-207

1999

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A high-voltage scanning electron microscopy system for in situ electromigration testing

Review of scientific instruments, 2000-07, Vol.71 (7), p.2848-2854

2000

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Kinetics of the Tial3 Formation From Al/Ti Thin Films

MRS proceedings, 1999, Vol.563

1999

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The Stress Change in Passivated Al Lines Due to the Reaction Between Ti and Al

MRS proceedings, 1998, Vol.516, Article 213

1998

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Interfacial reactions in multilayers intended for microelectronics devices

MRS proceedings, 1998, Vol.514, Article 547

1998

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Observation of voids induced by mechanical stress and electromigration in passivated Al lines deposited at different purity levels

Applied physics letters, 1994-05, Vol.64 (18), p.2424-2426

1994

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Void nucleation on intentionally added defects in Al interconnects

Applied physics letters, 1999-08, Vol.75 (5), p.633-635

1999

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Clinical safety of the ProMRI pacemaker system in patients subjected to head and lower lumbar 1.5-T magnetic resonance imaging scanning conditions

Heart rhythm, 2015-06, Vol.12 (6), p.1183-1191

2015

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Analysis of the Mechanical Failure in a Multilayered Thin Film System Tested by Microtensile Loading

MRS proceedings, 1995, Vol.391, Article 85

1995

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In Situ Observations of Voiding in Metal Lines Under Passivation

MRS proceedings, 1994, Vol.338, Article 409

1994

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Effect of Modified Metal/Passivation Interfaces on Stress Voiding in Interconnects

MRS proceedings, 1999, Vol.563, Article 219

1999

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Electromigration Voiding in Argon-Implanted Interconnects

MRS proceedings, 1999, Vol.563, Article 97

1999

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Comparison of Stresses in Al Lines Under Various Passivations

MRS proceedings, 1997, Vol.473, Article 415

1997

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A 90nm high volume manufacturing logic technology featuring Cu metallization and CDO low-k ILD interconnects on 300 mm wafers

Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729), 2004, p.205-207

2004

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Strain Measurements from Single Grains in Passivated Aluminum Conductor Lines by X-Ray Microdiffraction During Electromigration

MRS proceedings, 2000, Vol.612, Article D8.6.1

2000

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The Effects of Width Transitions on the Reliability of Interconnects

MRS proceedings, 2000, Vol.612, Article D2.8.1

2000

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Kinetics of the Tial 3 Formation From Al/Ti Thin Films

MRS proceedings, 1999, Vol.563, Article 27

1999

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Observations of void nucleation and growth in passivated metal lines

Marieb, T

1995

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Nucleation and Growth at Reactive Interfaces Followed by Impedance Measurements

MRS proceedings, 1997, Vol.500, Article 125

1997

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In Situ SEM Observations of Electromigration Voids in Aluminum Lines Under Passivation

MRS bulletin, 1994-06, Vol.19 (6), p.51-55

1994

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High spatial resolution grain orientation and strain mapping in thin films using polychromatic submicron x-ray diffraction

Local plasticity of Al thin films as revealed by x-ray microdiffraction

Electromigration lifetime and critical void volume

Observations of electromigration induced void nucleation and growth in polycrystalline and near-bamboo passivated Al lines

Effects of dielectric materials on electromigration failure

Mechanical behaviour of submicron multilayers submitted to microtensile experiments

A high-voltage scanning electron microscopy system for in situ electromigration testing

Kinetics of the Tial3 Formation From Al/Ti Thin Films

The Stress Change in Passivated Al Lines Due to the Reaction Between Ti and Al

Interfacial reactions in multilayers intended for microelectronics devices

Observation of voids induced by mechanical stress and electromigration in passivated Al lines deposited at different purity levels

Void nucleation on intentionally added defects in Al interconnects

Clinical safety of the ProMRI pacemaker system in patients subjected to head and lower lumbar 1.5-T magnetic resonance imaging scanning conditions

Analysis of the Mechanical Failure in a Multilayered Thin Film System Tested by Microtensile Loading

In Situ Observations of Voiding in Metal Lines Under Passivation

Effect of Modified Metal/Passivation Interfaces on Stress Voiding in Interconnects

Electromigration Voiding in Argon-Implanted Interconnects

Comparison of Stresses in Al Lines Under Various Passivations

A 90nm high volume manufacturing logic technology featuring Cu metallization and CDO low-k ILD interconnects on 300 mm wafers

Strain Measurements from Single Grains in Passivated Aluminum Conductor Lines by X-Ray Microdiffraction During Electromigration

The Effects of Width Transitions on the Reliability of Interconnects

Kinetics of the Tial 3 Formation From Al/Ti Thin Films

Observations of void nucleation and growth in passivated metal lines

Nucleation and Growth at Reactive Interfaces Followed by Impedance Measurements

In Situ SEM Observations of Electromigration Voids in Aluminum Lines Under Passivation

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