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High current-induced degradation of AlGaN ultraviolet light emitting diodes

Journal of applied physics, 2011-05, Vol.109 (10), p.103108-103108-10

2011

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Transient electromagnetically induced transparency in self-assembled quantum dots

Applied physics letters, 2008-01, Vol.92 (4), p.041113-041113-3

2008

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Impact of carrier localization on radiative recombination times in semipolar (202¯1) plane InGaN/GaN quantum wells

Applied physics letters, 2015-11, Vol.107 (21)

2015

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Photoexcited carrier recombination in wide m -plane InGaN/GaN quantum wells

Applied physics letters, 2013-09, Vol.103 (11), p.111107

2013

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High spectral uniformity of AlGaN with a high Al content evidenced by scanning near-field photoluminescence spectroscopy

Applied physics letters, 2014-12, Vol.105 (24), p.241108

2014

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Optical properties of extended and localized states in m -plane InGaN quantum wells

Applied physics letters, 2013-03, Vol.102 (10), p.101102

2013

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Localization potentials in AlGaN epitaxial films studied by scanning near-field optical spectroscopy

Journal of applied physics, 2011-06, Vol.109 (11), p.113516-113516-7

2011

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GaBiAs: A material for optoelectronic terahertz devices

Applied physics letters, 2006-05, Vol.88 (20), p.201112-201112-3

2006

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Photoexcited carrier trapping and recombination at Fe centers in GaN

Journal of applied physics, 2016-06, Vol.119 (21)

2016

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Carrier localization in m-plane InGaN/GaN quantum wells probed by scanning near field optical spectroscopy

Applied physics letters, 2010-10, Vol.97 (15), p.151106

2010

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Optical studies of degradation of AlGaN quantum well based deep ultraviolet light emitting diodes

Journal of applied physics, 2010-11, Vol.108 (9), p.093113-093113-6

2010

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Aging of AlGaN quantum well light emitting diode studied by scanning near-field optical spectroscopy

Applied physics letters, 2009-11, Vol.95 (18), p.181914-181914-3

2009

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Time-resolved luminescence studies of proton-implanted GaN

Applied physics letters, 2009-09, Vol.95 (11), p.112108-112108-3

2009

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Photoexcited carrier dynamics in AlInN/GaN heterostructures

Applied physics letters, 2012-06, Vol.100 (24), p.242104

2012

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Carrier dynamics in InP nanopillar arrays fabricated by low-damage etching

Applied physics letters, 2013-05, Vol.102 (21), p.212106

2013

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Carrier lifetimes in AlGaN quantum wells: electric field and excitonic effects

Journal of physics. D, Applied physics, 2008-08, Vol.41 (15), p.155116-155116 (4)

2008

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Electron and Hole Capture Cross-Sections of Fe Acceptors in GaN:Fe Epitaxially Grown on Sapphire

Journal of electronic materials, 2007-12, Vol.36 (12), p.1621-1624

2007

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Screening dynamics of intrinsic electric field in AlGaN quantum wells

Applied physics letters, 2008-02, Vol.92 (6), p.061907-061907-3

2008

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Dynamics of carrier recombination and localization in AlGaN quantum wells studied by time-resolved transmission spectroscopy

Applied physics letters, 2009-08, Vol.95 (9), p.091910-091910-3

2009

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Transient photoreflectance of AlInN/GaN heterostructures

AIP advances, 2012-12, Vol.2 (4), p.042148-042148-7

2012

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Multimode scanning near-field photoluminescence spectroscopy and its application for studies of InGaN epitaxial layers and quantum wells

Lithuanian journal of physics, 2018-01, Vol.58 (1)

2018

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Carrier spin dynamics in modulation-doped InAs∕GaAs quantum dots

Journal of applied physics, 2006-09, Vol.100 (5), p.054310

2006

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Intrinsic electric fields in AlGaN quantum wells

Applied physics letters, 2007-02, Vol.90 (8), p.081914-081914-3

2007

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Food Habits of Patagonotothen cornucola (Nototheniidae) in Patagonian Shelf (Southwest Atlantic)

Journal of ichthyology, 2021-11, Vol.61 (6), p.891-899

2021

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Recombination properties of Si-doped InGaAs/GaAs quantum dots

Nanotechnology, 2006-11, Vol.17 (21), p.5373-5377

2006

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High current-induced degradation of AlGaN ultraviolet light emitting diodes

Transient electromagnetically induced transparency in self-assembled quantum dots

Impact of carrier localization on radiative recombination times in semipolar (202¯1) plane InGaN/GaN quantum wells

Photoexcited carrier recombination in wide m -plane InGaN/GaN quantum wells

High spectral uniformity of AlGaN with a high Al content evidenced by scanning near-field photoluminescence spectroscopy

Optical properties of extended and localized states in m -plane InGaN quantum wells

Localization potentials in AlGaN epitaxial films studied by scanning near-field optical spectroscopy

GaBiAs: A material for optoelectronic terahertz devices

Photoexcited carrier trapping and recombination at Fe centers in GaN

Carrier localization in m-plane InGaN/GaN quantum wells probed by scanning near field optical spectroscopy

Optical studies of degradation of AlGaN quantum well based deep ultraviolet light emitting diodes

Aging of AlGaN quantum well light emitting diode studied by scanning near-field optical spectroscopy

Time-resolved luminescence studies of proton-implanted GaN

Photoexcited carrier dynamics in AlInN/GaN heterostructures

Carrier dynamics in InP nanopillar arrays fabricated by low-damage etching

Carrier lifetimes in AlGaN quantum wells: electric field and excitonic effects

Electron and Hole Capture Cross-Sections of Fe Acceptors in GaN:Fe Epitaxially Grown on Sapphire

Screening dynamics of intrinsic electric field in AlGaN quantum wells

Dynamics of carrier recombination and localization in AlGaN quantum wells studied by time-resolved transmission spectroscopy

Transient photoreflectance of AlInN/GaN heterostructures

Multimode scanning near-field photoluminescence spectroscopy and its application for studies of InGaN epitaxial layers and quantum wells

Carrier spin dynamics in modulation-doped InAs∕GaAs quantum dots

Intrinsic electric fields in AlGaN quantum wells

Food Habits of Patagonotothen cornucola (Nototheniidae) in Patagonian Shelf (Southwest Atlantic)

Recombination properties of Si-doped InGaAs/GaAs quantum dots

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