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Optically Pumped GeSn Microdisk Lasers on Si

ACS photonics, 2016-07, Vol.3 (7), p.1279-1285

2016

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Negative Capacitance as Performance Booster for Tunnel FETs and MOSFETs: An Experimental Study

IEEE electron device letters, 2017-10, Vol.38 (10), p.1485-1488

2017

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Schottky barrier tuning via dopant segregation in NiGeSn-GeSn contacts

Journal of applied physics, 2017-05, Vol.121 (20)

2017

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Short-wave infrared LEDs from GeSn/SiGeSn multiple quantum wells

Optica, 2017-02, Vol.4 (2), p.185

2017

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SiGeSn Ternaries for Efficient Group IV Heterostructure Light Emitters

Small (Weinheim an der Bergstrasse, Germany), 2017-04, Vol.13 (16), p.np-n/a

2017

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GeSn/SiGeSn Heterostructure and Multi Quantum Well Lasers

ACS photonics, 2018-11, Vol.5 (11), p.4628-4636

2018

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A Steep-Slope Transistor Combining Phase-Change and Band-to-Band-Tunneling to Achieve a sub-Unity Body Factor

Scientific reports, 2017-03, Vol.7 (1), p.355-355, Article 355

2017

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Advanced GeSn/SiGeSn Group IV Heterostructure Lasers

Advanced science, 2018-06, Vol.5 (6), p.1700955-n/a

2018

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Impact of TFET Unidirectionality and Ambipolarity on the Performance of 6T SRAM Cells

IEEE journal of the Electron Devices Society, 2015-05, Vol.3 (3), p.223-232

2015

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High‑k Gate Stacks on Low Bandgap Tensile Strained Ge and GeSn Alloys for Field-Effect Transistors

ACS applied materials & interfaces, 2015-01, Vol.7 (1), p.62-67

2015

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Strained Si and SiGe Nanowire Tunnel FETs for Logic and Analog Applications

IEEE journal of the Electron Devices Society, 2015-05, Vol.3 (3), p.103-114

2015

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Silicon Nanowire Tunneling Field-Effect Transistor Arrays: Improving Subthreshold Performance Using Excimer Laser Annealing

IEEE transactions on electron devices, 2011-07, Vol.58 (7), p.1822-1829

2011

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Vapor transport growth of MoS2 nucleated on SiO2 patterns and graphene flakes

Nano research, 2016-11, Vol.9 (11), p.3504-3514

2016

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A Novel Gate-Normal Tunneling Field-Effect Transistor With Dual-Metal Gate

IEEE journal of the Electron Devices Society, 2018-01, Vol.6, p.1070-1076

2018

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Strained Silicon Single Nanowire Gate-All-Around TFETs with Optimized Tunneling Junctions

Applied sciences, 2018-05, Vol.8 (5), p.670

2018

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Ultrathin highly uniform Ni(Al) germanosilicide layer with modulated B8 type Ni5(SiGe)3 phase formed on strained Si1−xGex layers

Applied physics letters, 2013-12, Vol.103 (23)

2013

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Molecular beam allotaxy: a new approach to epitaxial heterostructures

Journal of physics. D, Applied physics, 1998-01, Vol.31 (1), p.1-17

Mantl, Siegfried

1998

Volltextzugriff (PDF)

Inverters With Strained Si Nanowire Complementary Tunnel Field-Effect Transistors

IEEE electron device letters, 2013-06, Vol.34 (6), p.813-815

2013

Volltextzugriff (PDF)

Low V_π Silicon photonics modulators with highly linear epitaxially grown phase shifters

Optics express, 2015-09, Vol.23 (18), p.23526

2015

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Effect of hysteretic and non-hysteretic negative capacitance on tunnel FETs DC performance

Nanotechnology, 2018-03, Vol.29 (9), p.095202-095202

2018

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Epitaxy of Si-Ge-Sn-based heterostructures for CMOS-integratable light emitters

Solid-state electronics, 2019-05, Vol.155, p.139-143

2019

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Transient negative capacitance and charge trapping in FDSOI MOSFETs with ferroelectric HfYOX

Solid-state electronics, 2019-09, Vol.159, p.71-76

2019

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Line and Point Tunneling in Scaled Si/SiGe Heterostructure TFETs

IEEE electron device letters, 2014-07, Vol.35 (7), p.699-701

2014

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Subthreshold Behavior of Floating-Gate MOSFETs With Ferroelectric Capacitors

IEEE transactions on electron devices, 2018-10, Vol.65 (10), p.4641-4645

2018

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Field electron emission based on resonant tunneling in diamond/CoSi2/Si quantum well nanostructures

Scientific reports, 2012-10, Vol.2 (1), p.746, Article 746

2012

Volltextzugriff (PDF)

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Optically Pumped GeSn Microdisk Lasers on Si

Negative Capacitance as Performance Booster for Tunnel FETs and MOSFETs: An Experimental Study

Schottky barrier tuning via dopant segregation in NiGeSn-GeSn contacts

Short-wave infrared LEDs from GeSn/SiGeSn multiple quantum wells

SiGeSn Ternaries for Efficient Group IV Heterostructure Light Emitters

GeSn/SiGeSn Heterostructure and Multi Quantum Well Lasers

A Steep-Slope Transistor Combining Phase-Change and Band-to-Band-Tunneling to Achieve a sub-Unity Body Factor

Advanced GeSn/SiGeSn Group IV Heterostructure Lasers

Impact of TFET Unidirectionality and Ambipolarity on the Performance of 6T SRAM Cells

High‑k Gate Stacks on Low Bandgap Tensile Strained Ge and GeSn Alloys for Field-Effect Transistors

Strained Si and SiGe Nanowire Tunnel FETs for Logic and Analog Applications

Silicon Nanowire Tunneling Field-Effect Transistor Arrays: Improving Subthreshold Performance Using Excimer Laser Annealing

Vapor transport growth of MoS2 nucleated on SiO2 patterns and graphene flakes

A Novel Gate-Normal Tunneling Field-Effect Transistor With Dual-Metal Gate

Strained Silicon Single Nanowire Gate-All-Around TFETs with Optimized Tunneling Junctions

Ultrathin highly uniform Ni(Al) germanosilicide layer with modulated B8 type Ni5(SiGe)3 phase formed on strained Si1−xGex layers

Molecular beam allotaxy: a new approach to epitaxial heterostructures

Inverters With Strained Si Nanowire Complementary Tunnel Field-Effect Transistors

Low V_π Silicon photonics modulators with highly linear epitaxially grown phase shifters

Effect of hysteretic and non-hysteretic negative capacitance on tunnel FETs DC performance

Epitaxy of Si-Ge-Sn-based heterostructures for CMOS-integratable light emitters

Transient negative capacitance and charge trapping in FDSOI MOSFETs with ferroelectric HfYOX

Line and Point Tunneling in Scaled Si/SiGe Heterostructure TFETs

Subthreshold Behavior of Floating-Gate MOSFETs With Ferroelectric Capacitors

Field electron emission based on resonant tunneling in diamond/CoSi2/Si quantum well nanostructures

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