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Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 2005-05, Vol.543 (1), p.188-193

2005

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Microphotoluminescence of GaN/AlN quantum dots grown by MBE

Physica status solidi. C, 2006-06, Vol.3 (6), p.2048-2051

2006

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Comparative analysis of (0001)GaN and (001)GaAs growth kinetics under Ga-rich conditions

Physica status solidi. C, 2004-02, Vol.1 (2), p.321-324

2004

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The optimal conditions of obtaining AlN-layers on sapphire with MBE method

2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices, 2009, p.43-43

2009

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IEEE_Xplore

Nucleation in Homoepitaxy on ß-(2×4)(001) GaAs

2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials, 2007, p.53-53

2007

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IEEE_Xplore

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Transformation of the elemental composition on the GaN surface during a 2D-3D transition

Droplet epitaxy of 3D zinc-blende GaN islands on a 2D van der Waals SiN structure

AlN growth on sapphire substrate by ammonia MBE

Sn-mediated transformations on Si(111) surface: Reconstructions, Electromigration, Homoepitaxy

Peculiarities of the AlN crystalline phase formation in a result of the electron-stimulated reconstruction transition (√31×√31)R ± 9° − (1 × 1)

Mg3N2 nanocrystallites formation during the GaN:Mg layers growth by the NH3-MBE technique

Chemical kinetics and thermodynamics of the AlN crystalline phase formation on sapphire substrate in ammonia MBE

Recombination processes in structures with GaN/ALN quantum dots

Scattering analysis of 2DEG mobility in undoped and doped AlGaN/AlN/GaN heterostructures with an in situ Si3N4 passivation layer

Scattering analysis of 2DEG mobility in undoped and doped AlGaN/AlN/GaN heterostructures with an in situ Si 3 N 4 passivation layer

Photoluminescence kinetics slowdown in an ensemble of GaN/AlN quantum dots upon tunneling interaction with defects

Influence of defects on the photoluminescence kinetics in GaN/AlN quantum-dot structures

Nitridation of an unreconstructed and reconstructed sapphire surface in an ammonia flow

Effect of the Sapphire-Nitridation Level and Nucleation-Layer Enrichment with Aluminum on the Structural Properties of AlN Layers

Nitridation effect on sapphire surface polaritons

Increase in the diffusion length of minority carriers in [Al.sub.x][Ga.sub.1-x]N alloys fabricated by ammonia molecular beam epitaxy

AlN/GaN heterostructures for normally-off transistors

MBE-grown AlGaN/GaN heterostructures for UV photodetectors

Linearly polarized photoluminescence from an ensemble of wurtzite GaN/AlN quantum dots

Photoluminescence of GaN quantum dots in AlN matrix

Microscopic parameters of materials containing GaN/AlN and InAs/AlAs heterostructures

Microphotoluminescence of GaN/AlN quantum dots grown by MBE

Comparative analysis of (0001)GaN and (001)GaAs growth kinetics under Ga-rich conditions

The optimal conditions of obtaining AlN-layers on sapphire with MBE method

Nucleation in Homoepitaxy on ß-(2×4)(001) GaAs

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