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Graphene-like AlN layer formation on (111)Si surface by ammonia molecular beam epitaxy

Journal of crystal growth, 2015-10, Vol.428, p.93-97

2015

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The effect of barrier layers on 2D electron effective mass in Al0.3Ga0.7N/AlN/GaN heterostructures

Journal of physics. Condensed matter, 2021-05, Vol.33 (25)

2021

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Evolution of the surface states during the in situ SiN layer formation on AlN/GaN heterostructures

Semiconductor science and technology, 2020-07, Vol.35 (7), p.75004

2020

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Chemical kinetics and thermodynamics of the AlN crystalline phase formation on sapphire substrate in ammonia MBE

Journal of thermal analysis and calorimetry, 2018-08, Vol.133 (2), p.1099-1107

2018

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Reconstruction phase transition c(4×4) – (1×3) on the (001)InSb surface

Journal of crystal growth, 2017-01, Vol.457, p.207-210

2017

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Analysis of the AlN phase transition on a sapphire surface within a universal 2D lattice gas model in MBE

Journal of physics. Conference series, 2021-03, Vol.1851 (1), p.12005

2021

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The variation of temperature-dependent carrier concentration and mobility in AlGaN/AlN/GaN heterostructure with SiN passivation

Physica Status Solidi. B: Basic Solid State Physics, 2015-09, Vol.252 (9), p.1960-1965

2015

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Effect of the Sapphire-Nitridation Level and Nucleation-Layer Enrichment with Aluminum on the Structural Properties of AlN Layers

Semiconductors (Woodbury, N.Y.), 2018-06, Vol.52 (6), p.789-796

2018

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Forming the GaN Nanocrystals on the Graphene-Like g-AlN and g-Si3N3 Surface

Physics of the solid state, 2019-12, Vol.61 (12), p.2329-2334

2019

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Nitridation effect on sapphire surface polaritons

Surface & coatings technology, 2013-07, Vol.227, p.58-61

2013

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Formation of a Graphene-Like SiN Layer on the Surface Si(111)

Semiconductors (Woodbury, N.Y.), 2018-12, Vol.52 (12), p.1511-1517

2018

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Undoped High-Resistance GaN Buffer Layer for AlGaN/GaN High-Electron-Mobility Transistors

Technical physics letters, 2019-08, Vol.45 (8), p.761-764

2019

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Prediction of rockbursts by analysis of induced seismicity data

International journal of rock mechanics and mining sciences (Oxford, England : 1997), 2001-09, Vol.38 (6), p.893-901

Mansurov, V.A

2001

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Original method of GaN and InGaN quantum dots formation on (0001)AlN surface by ammonia molecular beam epitaxy

Journal of physics. Conference series, 2017-06, Vol.864 (1), p.12007

2017

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Principal component analysis of magnetic steel eddy current testing data

AIP Conference Proceedings, 2022, Vol.2509 (1)

2022

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AlN/GaN heterostructures for normally-off transistors

Semiconductors (Woodbury, N.Y.), 2017-03, Vol.51 (3), p.379-386

2017

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Data processing of non-stationary capillary viscometer for blood

Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, 2019-06 (7), p.30-35

2019

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International Cooperation in Institute of Sociology: from the 1970s to the late 2000s

Sotsiologicheskie issledovaniia, 2018-01 (12), p.13-29

2018

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Hurst exponent-based analysis of the behavior of filled polymers in aggressive media

AIP Conference Proceedings, 2019, Vol.2167 (1)

2019

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Surface polariton spectroscopy of AlN films grown by ammonia MBE on (0001) Al2O3 substrate

Physica status solidi. C, 2015-04, Vol.12 (4-5), p.439-442

2015

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Nonstationary method of measuring flow curves of low-viscosity settling suspensions

Journal of engineering physics and thermophysics, 2011-05, Vol.84 (3), p.490-494

2011

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Droplet epitaxy of 3D zinc-blende GaN islands on a 2D van der Waals SiN structure

Applied surface science, 2024-05, Vol.655, p.159595, Article 159595

2024

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Transformation of the elemental composition on the GaN surface during a 2D-3D transition

Applied surface science, 2022-03, Vol.577, p.151802, Article 151802

2022

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Examination of reasons for non-uniform thickness of welding electrode coatings

Welding international, 2014-07, Vol.28 (7), p.572-574

2014

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Sn-mediated transformations on Si(111) surface: Reconstructions, Electromigration, Homoepitaxy

Surface science, 2024-03, Vol.741, p.122418, Article 122418

2024

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Graphene-like AlN layer formation on (111)Si surface by ammonia molecular beam epitaxy

The effect of barrier layers on 2D electron effective mass in Al0.3Ga0.7N/AlN/GaN heterostructures

Evolution of the surface states during the in situ SiN layer formation on AlN/GaN heterostructures

Chemical kinetics and thermodynamics of the AlN crystalline phase formation on sapphire substrate in ammonia MBE

Reconstruction phase transition c(4×4) – (1×3) on the (001)InSb surface

Analysis of the AlN phase transition on a sapphire surface within a universal 2D lattice gas model in MBE

The variation of temperature-dependent carrier concentration and mobility in AlGaN/AlN/GaN heterostructure with SiN passivation

Effect of the Sapphire-Nitridation Level and Nucleation-Layer Enrichment with Aluminum on the Structural Properties of AlN Layers

Forming the GaN Nanocrystals on the Graphene-Like g-AlN and g-Si3N3 Surface

Nitridation effect on sapphire surface polaritons

Formation of a Graphene-Like SiN Layer on the Surface Si(111)

Undoped High-Resistance GaN Buffer Layer for AlGaN/GaN High-Electron-Mobility Transistors

Prediction of rockbursts by analysis of induced seismicity data

Original method of GaN and InGaN quantum dots formation on (0001)AlN surface by ammonia molecular beam epitaxy

Principal component analysis of magnetic steel eddy current testing data

AlN/GaN heterostructures for normally-off transistors

Data processing of non-stationary capillary viscometer for blood

International Cooperation in Institute of Sociology: from the 1970s to the late 2000s

Hurst exponent-based analysis of the behavior of filled polymers in aggressive media

Surface polariton spectroscopy of AlN films grown by ammonia MBE on (0001) Al2O3 substrate

Nonstationary method of measuring flow curves of low-viscosity settling suspensions

Droplet epitaxy of 3D zinc-blende GaN islands on a 2D van der Waals SiN structure

Transformation of the elemental composition on the GaN surface during a 2D-3D transition

Examination of reasons for non-uniform thickness of welding electrode coatings

Sn-mediated transformations on Si(111) surface: Reconstructions, Electromigration, Homoepitaxy

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