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From MEMRISTOR to MEMImpedance device

Applied physics letters, 2016-02, Vol.108 (5), p.53502-132

2016

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Resistive switching of HfO2-based Metal–Insulator–Metal diodes: Impact of the top electrode material

Thin solid films, 2012-05, Vol.520 (14), p.4551-4555

2012

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Stress-induced leakage current and trap generation in HfO2 thin films

Journal of applied physics, 2012-01, Vol.112 (7)

2012

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Investigation of HfO2 and ZrO2 for Resistive Random Access Memory applications

Thin solid films, 2012-12, Vol.525, p.20-27

2012

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Reliability of HfO2 metal-insulator-metal capacitors under AC stress

Journal of physics. D, Applied physics, 2016-03, Vol.49 (16)

2016

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Experimental evaluation of the forming process of virgin HfO2 memory cells by capacitance-voltage measurements

Physica status solidi. PSS-RRL. Rapid research letters, 2014-07, Vol.8 (7), p.634-638

2014

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Thermal catalytic etching of diamond by double-metal layers

Diamond and related materials, 2024-05, Vol.145, p.111075, Article 111075

2024

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On the mechanisms of cation injection in conducting bridge memories: The case of HfO2 in contact with noble metal anodes (Au, Cu, Ag)

Journal of applied physics, 2016-03, Vol.119 (11)

2016

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Investigation of electrical properties of HfO2 metal–insulator–metal (MIM) devices

Applied physics. A, Materials science & processing, 2014, Vol.116 (4), p.1647-1653

2014

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Stress-induced leakage current and trap generation in HfO 2 thin films

Journal of applied physics, 2012-10, Vol.112 (7), p.74103

2012

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On the mechanisms of cation injection in conducting bridge memories: The case of HfO 2 in contact with noble metal anodes (Au, Cu, Ag)

Journal of applied physics, 2016-03, Vol.119 (11)

2016

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Dielectric relaxation in hafnium oxide: A study of transient currents and admittance spectroscopy in HfO2 metal-insulator-metal devices

Journal of applied physics, 2011-11, Vol.110 (10)

2011

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Reliability of HfO 2 metal–insulator–metal capacitors under AC stress

Journal of physics. D, Applied physics, 2016-04, Vol.49 (16), p.165502

2016

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Reliability of HfO sub(2) metal-insulator-metal capacitors under AC stress

Journal of physics. D, Applied physics, 2016-04, Vol.49 (16), p.165502-165507

2016

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Differences between direct current and alternating current capacitance nonlinearities in high-k dielectrics and their relation to hopping conduction

Journal of applied physics, 2014-08, Vol.116 (8)

2014

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On the mechanisms of cation injection in conducting bridge memories: The case of HfO{sub 2} in contact with noble metal anodes (Au, Cu, Ag)

Journal of applied physics, 2016-03, Vol.119 (11)

2016

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Metal-Insulator-Metal Devices with High-K Dielectric for Nonvolatile or Dynamic Random Access Memories

ACM transactions on embedded computing systems, 2015, Vol.67 (issue 1), p.99-110

2015

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Dielectric relaxation in hafnium oxide: A study of transient currents and admittance spectroscopy in HfO 2 metal-insulator-metal devices

Journal of applied physics, 2011-11, Vol.110 (10), p.104108-104108-9

2011

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Experimental evaluation of the forming process of virgin HfO 2 memory cells by capacitance–voltage measurements

Physica status solidi. PSS-RRL. Rapid research letters, 2014-07, Vol.8 (7), p.634-638

2014

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Plasma treatment of HfO2-based metal–insulator–metal resistive memories a

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2011-07, Vol.29 (4)

2011

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A fully passive RF switch based on nanometric conductive bridge

2012 IEEE/MTT-S International Microwave Symposium Digest, 2012, p.1-3

2012

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Mechanisms of resistance switching in nanometric metal oxides and their dependence on electrodes

2015 IEEE 11th International Conference on the Properties and Applications of Dielectric Materials (ICPADM), 2015, p.56-59

2015

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IEEE_Xplore

Plasma treatment of HfO 2 -based metal-insulator-metal resistive memories

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2011-06, Vol.29 (4), p.041512-041512-6

2011

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Resistive switching in metal-oxide-metal devices: Fundamental understanding in relation to material characterization

2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2013, p.151-158

2013

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IEEE_Xplore

Stochastic domain-wall depinning under current in FePt spin valves and single layers

Physical review. B, Condensed matter and materials physics, 2011-07, Vol.84 (1), Article 014411

2011

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From MEMRISTOR to MEMImpedance device

Resistive switching of HfO2-based Metal–Insulator–Metal diodes: Impact of the top electrode material

Stress-induced leakage current and trap generation in HfO2 thin films

Investigation of HfO2 and ZrO2 for Resistive Random Access Memory applications

Reliability of HfO2 metal-insulator-metal capacitors under AC stress

Experimental evaluation of the forming process of virgin HfO2 memory cells by capacitance-voltage measurements

Thermal catalytic etching of diamond by double-metal layers

On the mechanisms of cation injection in conducting bridge memories: The case of HfO2 in contact with noble metal anodes (Au, Cu, Ag)

Investigation of electrical properties of HfO2 metal–insulator–metal (MIM) devices

Stress-induced leakage current and trap generation in HfO 2 thin films

On the mechanisms of cation injection in conducting bridge memories: The case of HfO 2 in contact with noble metal anodes (Au, Cu, Ag)

Dielectric relaxation in hafnium oxide: A study of transient currents and admittance spectroscopy in HfO2 metal-insulator-metal devices

Reliability of HfO 2 metal–insulator–metal capacitors under AC stress

Reliability of HfO sub(2) metal-insulator-metal capacitors under AC stress

Differences between direct current and alternating current capacitance nonlinearities in high-k dielectrics and their relation to hopping conduction

On the mechanisms of cation injection in conducting bridge memories: The case of HfO{sub 2} in contact with noble metal anodes (Au, Cu, Ag)

Metal-Insulator-Metal Devices with High-K Dielectric for Nonvolatile or Dynamic Random Access Memories

Dielectric relaxation in hafnium oxide: A study of transient currents and admittance spectroscopy in HfO 2 metal-insulator-metal devices

Experimental evaluation of the forming process of virgin HfO 2 memory cells by capacitance–voltage measurements

Plasma treatment of HfO2-based metal–insulator–metal resistive memories a

A fully passive RF switch based on nanometric conductive bridge

Mechanisms of resistance switching in nanometric metal oxides and their dependence on electrodes

Plasma treatment of HfO 2 -based metal-insulator-metal resistive memories

Resistive switching in metal-oxide-metal devices: Fundamental understanding in relation to material characterization

Stochastic domain-wall depinning under current in FePt spin valves and single layers

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