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Role of Nitrogen and Oxygen in Capacitance Formation of Carbon Nanowalls

The journal of physical chemistry letters, 2020-06, Vol.11 (12), p.4859-4865

2020

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Optical Emission from C2 – Anions in Microwave-Activated CH4/H2 Plasmas for Chemical Vapor Deposition of Diamond

The journal of physical chemistry. A, Molecules, spectroscopy, kinetics, environment, & general theory, 2017-04, Vol.121 (14), p.2760-2772

2017

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H− production in hydrogen DC glow discharge

Plasma sources science & technology, 2024-08, Vol.33 (8), p.85002

2024

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Vibrationally Excited Ozone in Kinetics of O/N/Ar Mixtures after Ozone Photolysis

Russian Journal of Physical Chemistry A, 2023-05, Vol.97 (5), p.1033-1045

2023

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Oxygen (3P) atom recombination on a Pyrex surface in an O2 plasma

Plasma sources science & technology, 2019-05, Vol.28 (5)

2019

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N 2 dissociation and kinetics of N( 4 S) atoms in nitrogen DC glow discharge

Journal of physics. D, Applied physics, 2018-09, Vol.51 (36), p.364002

2018

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Damage-free plasma etching of porous organo-silicate low-k using micro-capillary condensation above -50 °C

Scientific reports, 2018-01, Vol.8 (1), p.1886-12, Article 1886

2018

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Microcrystalline, nanocrystalline, and ultrananocrystalline diamond chemical vapor deposition: Experiment and modeling of the factors controlling growth rate, nucleation, and crystal size

Journal of applied physics, 2007-03, Vol.101 (5)

2007

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New insights into the mechanism of CVD diamond growth: Single crystal diamond in MW PECVD reactors

Diamond and related materials, 2008-07, Vol.17 (7), p.1021-1028

2008

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Diamond growth on WC-Co substrates by hot filament chemical vapor deposition: Effect of filament–substrate separation

Diamond and related materials, 2011-05, Vol.20 (5), p.641-650

2011

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Structure of DC magnetron sputtering discharge at various gas pressures: a two-dimensional particle-in-cell Monte Carlo collision study

Plasma sources science & technology, 2021-05, Vol.30 (5), p.55009

2021

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N2 dissociation and kinetics of N(4S) atoms in nitrogen DC glow discharge

Journal of physics. D, Applied physics, 2018-08, Vol.51 (36)

2018

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Reevaluation of the mechanism for ultrananocrystalline diamond deposition from Ar∕CH4∕H2 gas mixtures

Journal of applied physics, 2006-05, Vol.99 (10)

2006

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VUV radiation flux from argon DC magnetron plasma

Journal of physics. D, Applied physics, 2020-07, Vol.53 (29), p.295202

2020

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The mechanism of low-k SiOCH film modification by oxygen atoms

Journal of applied physics, 2010-10, Vol.108 (7), p.073303-073303-10

2010

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Damage and etching of ultra low-k materials in fluorocarbon plasma at lowered temperatures

Journal of physics. D, Applied physics, 2017-12, Vol.50 (48), p.485202

2017

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Reaction of hydrogen atoms with singlet delta oxygen (O2(a1Δg)). Is everything completely clear?

Journal of physics. D, Applied physics, 2016-11, Vol.49 (48), p.485202

2016

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Interaction of F atoms with SiOCH ultra low-k films. Part II: etching

Journal of physics. D, Applied physics, 2015-05, Vol.48 (17), p.175204-14

2015

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Interaction of F atoms with SiOCH ultra-low-k films: I. Fluorination and damage

Journal of physics. D, Applied physics, 2015-05, Vol.48 (17), p.175203-13

2015

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Low-k films modification under EUV and VUV radiation

Journal of physics. D, Applied physics, 2014-01, Vol.47 (2), p.025102-1-025102-14

2014

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Optical Emission from C 2 - Anions in Microwave-Activated CH 4 /H 2 Plasmas for Chemical Vapor Deposition of Diamond

The journal of physical chemistry. A, Molecules, spectroscopy, kinetics, environment, & general theory, 2017-04, Vol.121 (14), p.2760-2772

2017

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Simulations of chemical vapor deposition diamond film growth using a kinetic Monte Carlo model

Journal of applied physics, 2010-07, Vol.108 (1)

2010

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Mechanism of the Interaction between F Atoms and SiCF3 Groups on the Low-κ Dielectric Surface

Surface investigation, x-ray, synchrotron and neutron techniques, 2018-05, Vol.12 (3), p.535-539

2018

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Dependence of electric potentials at trench surfaces on ion angular distribution in plasma etching processes

Journal of physics. D, Applied physics, 2016-03, Vol.49 (10), p.105203-105212

2016

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Plasmachemical and heterogeneous processes in ozonizers with oxygen activation by a dielectric barrier discharge

Plasma physics reports, 2016-10, Vol.42 (10), p.956-969

2016

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Role of Nitrogen and Oxygen in Capacitance Formation of Carbon Nanowalls

Optical Emission from C2 – Anions in Microwave-Activated CH4/H2 Plasmas for Chemical Vapor Deposition of Diamond

H− production in hydrogen DC glow discharge

Vibrationally Excited Ozone in Kinetics of O/N/Ar Mixtures after Ozone Photolysis

Oxygen (3P) atom recombination on a Pyrex surface in an O2 plasma

N 2 dissociation and kinetics of N( 4 S) atoms in nitrogen DC glow discharge

Damage-free plasma etching of porous organo-silicate low-k using micro-capillary condensation above -50 °C

Microcrystalline, nanocrystalline, and ultrananocrystalline diamond chemical vapor deposition: Experiment and modeling of the factors controlling growth rate, nucleation, and crystal size

New insights into the mechanism of CVD diamond growth: Single crystal diamond in MW PECVD reactors

Diamond growth on WC-Co substrates by hot filament chemical vapor deposition: Effect of filament–substrate separation

Structure of DC magnetron sputtering discharge at various gas pressures: a two-dimensional particle-in-cell Monte Carlo collision study

N2 dissociation and kinetics of N(4S) atoms in nitrogen DC glow discharge

Reevaluation of the mechanism for ultrananocrystalline diamond deposition from Ar∕CH4∕H2 gas mixtures

VUV radiation flux from argon DC magnetron plasma

The mechanism of low-k SiOCH film modification by oxygen atoms

Damage and etching of ultra low-k materials in fluorocarbon plasma at lowered temperatures

Reaction of hydrogen atoms with singlet delta oxygen (O2(a1Δg)). Is everything completely clear?

Interaction of F atoms with SiOCH ultra low-k films. Part II: etching

Interaction of F atoms with SiOCH ultra-low-k films: I. Fluorination and damage

Low-k films modification under EUV and VUV radiation

Optical Emission from C 2 - Anions in Microwave-Activated CH 4 /H 2 Plasmas for Chemical Vapor Deposition of Diamond

Simulations of chemical vapor deposition diamond film growth using a kinetic Monte Carlo model

Mechanism of the Interaction between F Atoms and SiCF3 Groups on the Low-κ Dielectric Surface

Dependence of electric potentials at trench surfaces on ion angular distribution in plasma etching processes

Plasmachemical and heterogeneous processes in ozonizers with oxygen activation by a dielectric barrier discharge

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