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Universal energy-level alignment of molecules on metal oxides

Nature materials, 2011-11, Vol.11 (1), p.76-81

2011

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Transition Metal Oxide Work Functions: The Influence of Cation Oxidation State and Oxygen Vacancies

Advanced functional materials, 2012-11, Vol.22 (21), p.4557-4568

2012

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Metal/Metal-Oxide Interfaces: How Metal Contacts Affect the Work Function and Band Structure of MoO3

Advanced functional materials, 2013-01, Vol.23 (2), p.215-226

2013

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Improved Electrical Performance of Multilayer MoS2 Transistor With NH3-Annealed ALD HfTiO Gate Dielectric

IEEE transactions on electron devices, 2017-03, Vol.64 (3), p.1020-1025

2017

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Effects of Processing Conditions on the Work Function and Energy-Level Alignment of NiO Thin Films

Journal of physical chemistry. C, 2010-11, Vol.114 (46), p.19777-19781

2010

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Low-Temperature-Processed High-Performance Pentacene OTFTs with Optimal Nd-Ti Oxynitride Mixture as Gate Dielectric

Materials, 2022-03, Vol.15 (6), p.2255

2022

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Repair of Oxygen Vacancies and Improvement of HfO2/MoS2 Interface by NH3-Plasma Treatment

IEEE transactions on electron devices, 2019-10, Vol.66 (10), p.4337-4342

2019

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Improved Interfacial and Electrical Properties of MoS2 Transistor With High/Low-Temperature Grown Hf0.5Al0.5O as Top-Gate Dielectric

IEEE electron device letters, 2020-03, Vol.41 (3), p.385-388

2020

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Electrical and Interfacial Properties of GaAs MOS Capacitors With La-Doped ZrON as Interfacial Passivation Layer

IEEE transactions on electron devices, 2017-05, Vol.64 (5), p.2179-2184

2017

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Improved Interfacial and Electrical Properties of GaAs MOS Capacitor With LaON/TiON Multilayer Composite Gate Dielectric and LaON as Interfacial Passivation Layer

IEEE transactions on electron devices, 2017-04, Vol.64 (4), p.1535-1540

2017

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Improvements of Interfacial and Electrical Properties for Ge MOS Capacitor by Using TaYON Interfacial Passivation Layer and Fluorine Incorporation

IEEE transactions on electron devices, 2017-09, Vol.64 (9), p.3528-3533

2017

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Impact of Nitrogen Incorporation on the Interface Between Ge and La2O3 or Y2O3 Gate Dielectric: A Study on the Formation of Germanate

IEEE transactions on electron devices, 2016-12, Vol.63 (12), p.4888-4892

2016

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Improved interfacial and electrical properties of HfLaON gate dielectric Ge MOS capacitor by NbON/Si dual passivation layer and fluorine incorporation

Applied physics letters, 2016-11, Vol.109 (19)

2016

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Improved interfacial and electrical properties of Ge MOS capacitor with ZrON/TaON multilayer composite gate dielectric by using fluorinated Si passivation layer

Applied physics letters, 2017-07, Vol.111 (5)

2017

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Double‐Layer MnCo2S4@Ni‐Co‐S Core/Shell Nanostructure on Nickel Foam for High‐Performance Supercapacitor

Physica status solidi. A, Applications and materials science, 2018-09, Vol.215 (18), p.n/a

2018

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N2-Plasma-Treated Ga2O3(Gd2O3) as Interface Passivation Layer for Ge MOS Capacitor With HfTiON Gate Dielectric

IEEE transactions on electron devices, 2016-07, Vol.63 (7), p.2838-2843

2016

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Plasma-Nitrided Ga2O3(Gd2O3) as Interfacial Passivation Layer for InGaAs Metal-Oxide- Semiconductor Capacitor With HfTiON Gate Dielectric

IEEE transactions on electron devices, 2015-04, Vol.62 (4), p.1235-1240

2015

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Influences of Remote Coulomb and Interface-Roughness Scatterings on Electron Mobility of InGaAs nMOSFET With High-k Stacked Gate Dielectric

IEEE transactions on nanotechnology, 2015-09, Vol.14 (5), p.854-861

2015

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Optimizing Al-doped ZrO2 as the gate dielectric for MoS2 field-effect transistors

Nanotechnology, 2020-03, Vol.31 (13), p.135206-135206

2020

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Impact of Gate-Electrode Material on Channel-Carrier Mobility of Thin-Film Transistor With High-k Gate Dielectric

IEEE electron device letters, 2024-07, Vol.45 (7), p.1197-1200

2024

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Effects of HfO2 encapsulation on electrical performances of few-layered MoS2 transistor with ALD HfO2 as back-gate dielectric

Nanotechnology, 2018-08, Vol.29 (34), p.345201-345201

2018

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High-mobility pentacene organic thin-film transistors achieved by reducing remote phonon scattering and surface-roughness scattering

Applied surface science, 2021-04, Vol.544, p.148656, Article 148656

2021

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High-performance fiber-shaped supercapacitors using carbon fiber thread (CFT)@polyanilne and functionalized CFT electrodes for wearable/stretchable electronics

Nano energy, 2015-01, Vol.11, p.662-670

2015

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Aqueous Manganese Dioxide Ink for Paper-Based Capacitive Energy Storage Devices

Angewandte Chemie (International ed.), 2015-06, Vol.54 (23), p.6800-6803

International ed. in English, 2015

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Interfacial and Electrical Properties of Ge MOS Capacitor by ZrLaON Passivation Layer and Fluorine Incorporation

IOP conference series. Materials Science and Engineering, 2017-09, Vol.229 (1), p.12018

2017

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Universal energy-level alignment of molecules on metal oxides

Transition Metal Oxide Work Functions: The Influence of Cation Oxidation State and Oxygen Vacancies

Metal/Metal-Oxide Interfaces: How Metal Contacts Affect the Work Function and Band Structure of MoO3

Improved Electrical Performance of Multilayer MoS2 Transistor With NH3-Annealed ALD HfTiO Gate Dielectric

Effects of Processing Conditions on the Work Function and Energy-Level Alignment of NiO Thin Films

Low-Temperature-Processed High-Performance Pentacene OTFTs with Optimal Nd-Ti Oxynitride Mixture as Gate Dielectric

Repair of Oxygen Vacancies and Improvement of HfO2/MoS2 Interface by NH3-Plasma Treatment

Improved Interfacial and Electrical Properties of MoS2 Transistor With High/Low-Temperature Grown Hf0.5Al0.5O as Top-Gate Dielectric

Electrical and Interfacial Properties of GaAs MOS Capacitors With La-Doped ZrON as Interfacial Passivation Layer

Improved Interfacial and Electrical Properties of GaAs MOS Capacitor With LaON/TiON Multilayer Composite Gate Dielectric and LaON as Interfacial Passivation Layer

Improvements of Interfacial and Electrical Properties for Ge MOS Capacitor by Using TaYON Interfacial Passivation Layer and Fluorine Incorporation

Impact of Nitrogen Incorporation on the Interface Between Ge and La2O3 or Y2O3 Gate Dielectric: A Study on the Formation of Germanate

Improved interfacial and electrical properties of HfLaON gate dielectric Ge MOS capacitor by NbON/Si dual passivation layer and fluorine incorporation

Improved interfacial and electrical properties of Ge MOS capacitor with ZrON/TaON multilayer composite gate dielectric by using fluorinated Si passivation layer

Double‐Layer MnCo2S4@Ni‐Co‐S Core/Shell Nanostructure on Nickel Foam for High‐Performance Supercapacitor

N2-Plasma-Treated Ga2O3(Gd2O3) as Interface Passivation Layer for Ge MOS Capacitor With HfTiON Gate Dielectric

Plasma-Nitrided Ga2O3(Gd2O3) as Interfacial Passivation Layer for InGaAs Metal-Oxide- Semiconductor Capacitor With HfTiON Gate Dielectric

Influences of Remote Coulomb and Interface-Roughness Scatterings on Electron Mobility of InGaAs nMOSFET With High-k Stacked Gate Dielectric

Optimizing Al-doped ZrO2 as the gate dielectric for MoS2 field-effect transistors

Impact of Gate-Electrode Material on Channel-Carrier Mobility of Thin-Film Transistor With High-k Gate Dielectric

Effects of HfO2 encapsulation on electrical performances of few-layered MoS2 transistor with ALD HfO2 as back-gate dielectric

High-mobility pentacene organic thin-film transistors achieved by reducing remote phonon scattering and surface-roughness scattering

High-performance fiber-shaped supercapacitors using carbon fiber thread (CFT)@polyanilne and functionalized CFT electrodes for wearable/stretchable electronics

Aqueous Manganese Dioxide Ink for Paper-Based Capacitive Energy Storage Devices

Interfacial and Electrical Properties of Ge MOS Capacitor by ZrLaON Passivation Layer and Fluorine Incorporation

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