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Fluoropolymer-based organic memristor with multifunctionality for flexible neural network system

Npj flexible electronics, 2021-12, Vol.5 (1), p.1-8, Article 34

2021

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Improved Environment Stability of Y2O3 RRAM Devices with Au Passivated Ag Top Electrodes

Materials, 2022-10, Vol.15 (19), p.6859

2022

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Enhanced Switching Reliability of Sol–Gel-Processed Y2O3 RRAM Devices Based on Y2O3 Surface Roughness-Induced Local Electric Field

Materials, 2022-03, Vol.15 (5), p.1943

2022

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Flexible Sol-Gel—Processed Y2O3 RRAM Devices Obtained via UV/Ozone-Assisted Photochemical Annealing Process

Materials, 2022-03, Vol.15 (5), p.1899

2022

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Deep Sub-60 mV/decade Subthreshold Swing in AlGaN/GaN FinMISHFETs with M-Plane Sidewall Channel

IEEE transactions on electron devices, 2019-04, Vol.66 (4), p.1699-1703

2019

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Silicon-compatible compound semiconductor tunneling field-effect transistor for high performance and low standby power operation

Applied physics letters, 2011-12, Vol.99 (24), p.243505-243505-4

2011

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Analysis of Multiple Fin-type Vertical GaN Power Transistors based on Bulk GaN Substrates

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2023, 23(1), 109, pp.17-25

2023

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Electrical Performance Depending on the Grain Boundary-location in the Multiple Nanosheet Tunneling Field-effect Transistor based on the Poly-Si

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2023, 23(1), 109, pp.8-16

2023

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Simulation of Capacitorless DRAM Based on the Polycrystalline Silicon Nanotube Structure with Multiple Grain Boundaries

Nanomaterials (Basel, Switzerland), 2023-07, Vol.13 (13), p.2026

2023

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UV/Ozone-Treated and Sol–Gel-Processed Y2O3 Insulators Prepared Using Gelation-Delaying Precursors

Nanomaterials (Basel, Switzerland), 2024-05, Vol.14 (9), p.791

2024

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Effect of Electrochemically Active Top Electrode Materials on Nanoionic Conductive Bridge Y2O3 Random-Access Memory

Nanomaterials (Basel, Switzerland), 2024-03, Vol.14 (6), p.532

2024

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Analysis of the Sensing Margin of Silicon and Poly-Si 1T-DRAM

Micromachines (Basel), 2020-02, Vol.11 (2), p.228

2020

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Performance comparison between p-i-n and p-n junction tunneling field-effect transistors

Japanese Journal of Applied Physics, 2018-06, Vol.57 (6S1), p.6

2018

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Sol–Gel-Processed Y2O3 Multilevel Resistive Random-Access Memory Cells for Neural Networks

Nanomaterials (Basel, Switzerland), 2023-08, Vol.13 (17), p.2432

2023

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Non-quasi-static small-signal modeling and analytical parameter extraction of SOI FinFETs

IEEE transactions on nanotechnology, 2006-05, Vol.5 (3), p.205-210

2006

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Separate Extraction of Gate Resistance Components in RF MOSFETs

IEEE transactions on electron devices, 2007-06, Vol.54 (6), p.1459-1463

2007

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Silicon-compatible high-hole-mobility transistor with an undoped germanium channel for low-power application

Applied physics letters, 2013-11, Vol.103 (22)

2013

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Effect of Work-function Variation on Transfer Characteristics and Memory Performances for Gate-all-around JLFET based Capacitorless DRAM

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2021, 21(6), 102, pp.381-389

2021

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Fabrication and Performances of Recessed Gate AlGaN/GaN MOSFETs with Si₃N₄/TiO₂ Stacked Dual Gate Dielectric

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2022, 22(2), 104, pp.105-114

2022

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Electrical Performances of GaN-based Vertical Trench MOSFETs with Cylindrical and Hexagonal Structure

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2021, 21(6), 102, pp.398-405

2021

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Extremely bias stress stable enhancement mode sol–gel-processed SnO2 thin-film transistors with Y2O3 passivation layers

Applied surface science, 2021-09, Vol.559, p.149971, Article 149971

2021

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RF Performance and Small-Signal Parameter Extraction of Junctionless Silicon Nanowire MOSFETs

IEEE transactions on electron devices, 2011-05, Vol.58 (5), p.1388-1396

2011

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A polycrystalline-silicon dual-gate MOSFET-based 1T-DRAM using grain boundary-induced variable resistance

Applied physics letters, 2019-05, Vol.114 (18)

2019

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Environmentally and Electrically Stable Sol-Gel-Deposited SnO2 Thin-Film Transistors with Controlled Passivation Layer Diffusion Penetration Depth That Minimizes Mobility Degradation

ACS applied materials & interfaces, 2022-03, Vol.14 (8), p.10558-10565

2022

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The analysis of dark signals in the CMOS APS imagers from the characterization of test structures

IEEE transactions on electron devices, 2004-02, Vol.51 (2), p.178-184

2004

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Fluoropolymer-based organic memristor with multifunctionality for flexible neural network system

Improved Environment Stability of Y2O3 RRAM Devices with Au Passivated Ag Top Electrodes

Enhanced Switching Reliability of Sol–Gel-Processed Y2O3 RRAM Devices Based on Y2O3 Surface Roughness-Induced Local Electric Field

Flexible Sol-Gel—Processed Y2O3 RRAM Devices Obtained via UV/Ozone-Assisted Photochemical Annealing Process

Deep Sub-60 mV/decade Subthreshold Swing in AlGaN/GaN FinMISHFETs with M-Plane Sidewall Channel

Silicon-compatible compound semiconductor tunneling field-effect transistor for high performance and low standby power operation

Analysis of Multiple Fin-type Vertical GaN Power Transistors based on Bulk GaN Substrates

Electrical Performance Depending on the Grain Boundary-location in the Multiple Nanosheet Tunneling Field-effect Transistor based on the Poly-Si

Simulation of Capacitorless DRAM Based on the Polycrystalline Silicon Nanotube Structure with Multiple Grain Boundaries

UV/Ozone-Treated and Sol–Gel-Processed Y2O3 Insulators Prepared Using Gelation-Delaying Precursors

Effect of Electrochemically Active Top Electrode Materials on Nanoionic Conductive Bridge Y2O3 Random-Access Memory

Analysis of the Sensing Margin of Silicon and Poly-Si 1T-DRAM

Performance comparison between p-i-n and p-n junction tunneling field-effect transistors

Sol–Gel-Processed Y2O3 Multilevel Resistive Random-Access Memory Cells for Neural Networks

Non-quasi-static small-signal modeling and analytical parameter extraction of SOI FinFETs

Separate Extraction of Gate Resistance Components in RF MOSFETs

Silicon-compatible high-hole-mobility transistor with an undoped germanium channel for low-power application

Effect of Work-function Variation on Transfer Characteristics and Memory Performances for Gate-all-around JLFET based Capacitorless DRAM

Fabrication and Performances of Recessed Gate AlGaN/GaN MOSFETs with Si₃N₄/TiO₂ Stacked Dual Gate Dielectric

Electrical Performances of GaN-based Vertical Trench MOSFETs with Cylindrical and Hexagonal Structure

Extremely bias stress stable enhancement mode sol–gel-processed SnO2 thin-film transistors with Y2O3 passivation layers

RF Performance and Small-Signal Parameter Extraction of Junctionless Silicon Nanowire MOSFETs

A polycrystalline-silicon dual-gate MOSFET-based 1T-DRAM using grain boundary-induced variable resistance

Environmentally and Electrically Stable Sol-Gel-Deposited SnO2 Thin-Film Transistors with Controlled Passivation Layer Diffusion Penetration Depth That Minimizes Mobility Degradation

The analysis of dark signals in the CMOS APS imagers from the characterization of test structures

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