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Experimental and theoretical studies of phonons in hexagonal InN

Applied physics letters, 1999-11, Vol.75 (21), p.3297-3299

1999

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Ridge Waveguide Structure for Lattice-Matched Quantum Cascade Lasers

Semiconductors (Woodbury, N.Y.), 2018-12, Vol.52 (12), p.1603-1606

2018

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On the Fabrication and Study of Lattice-Matched Heterostructures for Quantum Cascade Lasers

Semiconductors (Woodbury, N.Y.), 2018-07, Vol.52 (7), p.950-953

2018

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The Effect of Active Region Heating on Dynamic and Power Characteristics of Quantum Cascade Lasers Emitting at a Wavelength of 4.8 µm at Room Temperature

Optics and spectroscopy, 2019-09, Vol.127 (3), p.479-482

2019

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Investigation of the Modified Structure of a Quantum Cascade Laser

Semiconductors (Woodbury, N.Y.), 2018-01, Vol.52 (1), p.126-130

2018

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Quantum-Cascade Lasers Generating at the 4.8-μm Wavelength at Room Temperature

Technical physics letters, 2018-09, Vol.44 (9), p.814-816

2018

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Molecular beam epitaxy growth methods of wavelength control for InAs/(In)GaAsN/GaAs heterostructures

Nanotechnology, 2008-11, Vol.19 (44), p.445715-445715 (5)

2008

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Molecular-beam epitaxy growth and characterization of 5-μm quantum cascade laser

Journal of physics. Conference series, 2011-04, Vol.291 (1), p.012008-7

2011

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Methods of controlling the emission wavelength in InAs/GaAsN/InGaAsN heterostructures on GaAs substrates

Semiconductors (Woodbury, N.Y.), 2008-07, Vol.42 (7), p.805-812

2008

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Valence band structure of GaAsN compounds and band-edge lineup in GaAs/GaAsN/InGaAs heterostructures

Journal of crystal growth, 2003-04, Vol.251 (1), p.417-421

2003

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Physical properties of InN with the band gap energy of 1.1 eV

Journal of crystal growth, 2001-07, Vol.227, p.481-485

2001

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Ion beam fabrication of metal/insulator/HT-superconductor nanostructures for field effect transistor

Microelectronic engineering, 2003-09, Vol.69 (2), p.480-484

2003

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Study of postgrowth processing in the fabrication of quantum-cascade lasers

Semiconductors (Woodbury, N.Y.), 2014-08, Vol.48 (8), p.1103-1108

2014

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Emission characteristics improvement in structures with InAs/GaAsN/InGaAsN superlattices

Technical physics letters, 2009-04, Vol.35 (4), p.384-387

Mamutin, V. V.

2009

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MBE Growth of Hexagonal InN Films on Sapphire with Different Initial Growth Stages

Physica status solidi. A, Applied research, 1999-11, Vol.176 (1), p.247-252

1999

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MBE growth and characterization of 5-μm quantum-cascade lasers

Semiconductors (Woodbury, N.Y.), 2010-07, Vol.44 (7), p.962-968

2010

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Growth mechanism of DyBa2Cu3Ox superconducting thin films grown by coevaporation molecular beam epitaxy at low temperatures and growth rates

Journal of crystal growth, 1995-08, Vol.153 (3-4), p.140-145

MAMUTIN, V. V

1995

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Hexagonal InN/sapphire heterostructures: interplay of interface and layer properties

Applied surface science, 2000-10, Vol.166 (1), p.87-91

2000

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Phonons in Hexagonal InN. Experiment and Theory

physica status solidi (b), 1999-11, Vol.216 (1), p.779-783

1999

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MBE growth of 5 μm quantum cascade lasers

Technical physics letters, 2010-05, Vol.36 (5), p.408-411

2010

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MBE growth and characterization of 5-{mu}m quantum-cascade lasers

Semiconductors (Woodbury, N.Y.), 2010-07, Vol.44 (7)

2010

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Lasing properties of strain-compensated InAs/InGaAsN/GaAsN heterostructures in 1.3–1.55 μm spectral range

Technical physics letters, 2006-03, Vol.32 (3), p.229-231

2006

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The Optical Properties of Heterostructures with Quantum-Confined InGaAsN Layers on a GaAs Substrate and Emitting at 1.3–1.55 μm

Semiconductors (Woodbury, N.Y.), 2005, Vol.39 (6), p.703

Kryzhanovskaya, N. V.

2005

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Preparation of a strip structure for quantum-cascade lasers

Technical physics letters, 2013-09, Vol.39 (9), p.811-813

2013

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Low temperature molecular beam epitaxial growth of DyBaCuO superconducting thin films

Applied physics letters, 1994-04, Vol.64 (15), p.2031-2033

1994

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Experimental and theoretical studies of phonons in hexagonal InN

Ridge Waveguide Structure for Lattice-Matched Quantum Cascade Lasers

On the Fabrication and Study of Lattice-Matched Heterostructures for Quantum Cascade Lasers

The Effect of Active Region Heating on Dynamic and Power Characteristics of Quantum Cascade Lasers Emitting at a Wavelength of 4.8 µm at Room Temperature

Investigation of the Modified Structure of a Quantum Cascade Laser

Quantum-Cascade Lasers Generating at the 4.8-μm Wavelength at Room Temperature

Molecular beam epitaxy growth methods of wavelength control for InAs/(In)GaAsN/GaAs heterostructures

Molecular-beam epitaxy growth and characterization of 5-μm quantum cascade laser

Methods of controlling the emission wavelength in InAs/GaAsN/InGaAsN heterostructures on GaAs substrates

Valence band structure of GaAsN compounds and band-edge lineup in GaAs/GaAsN/InGaAs heterostructures

Physical properties of InN with the band gap energy of 1.1 eV

Ion beam fabrication of metal/insulator/HT-superconductor nanostructures for field effect transistor

Study of postgrowth processing in the fabrication of quantum-cascade lasers

Emission characteristics improvement in structures with InAs/GaAsN/InGaAsN superlattices

MBE Growth of Hexagonal InN Films on Sapphire with Different Initial Growth Stages

MBE growth and characterization of 5-μm quantum-cascade lasers

Growth mechanism of DyBa2Cu3Ox superconducting thin films grown by coevaporation molecular beam epitaxy at low temperatures and growth rates

Hexagonal InN/sapphire heterostructures: interplay of interface and layer properties

Phonons in Hexagonal InN. Experiment and Theory

MBE growth of 5 μm quantum cascade lasers

MBE growth and characterization of 5-{mu}m quantum-cascade lasers

Lasing properties of strain-compensated InAs/InGaAsN/GaAsN heterostructures in 1.3–1.55 μm spectral range

The Optical Properties of Heterostructures with Quantum-Confined InGaAsN Layers on a GaAs Substrate and Emitting at 1.3–1.55 μm

Preparation of a strip structure for quantum-cascade lasers

Low temperature molecular beam epitaxial growth of DyBaCuO superconducting thin films

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