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Microwave Performance of 'Buffer-Free' GaN-on-SiC High Electron Mobility Transistors

IEEE electron device letters, 2020-06, Vol.41 (6), p.828-831

2020

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Suppression of Dispersive Effects in AlGaN/GaN High-Electron-Mobility Transistors Using Bilayer SiNx Grown by Low Pressure Chemical Vapor Deposition

IEEE electron device letters, 2015-06, Vol.36 (6), p.537-539

2015

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Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs

IEEE electron device letters, 2015-03, Vol.36 (3), p.235-237

2015

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Electrical properties, microstructure, and thermal stability of Ta-based ohmic contacts annealed at low temperature for GaN HEMTs

Semiconductor science and technology, 2011-07, Vol.26 (7), p.075006

2011

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Impact of Channel Thickness on the Large-Signal Performance in InAlGaN/AlN/GaN HEMTs With an AlGaN Back Barrier

IEEE transactions on electron devices, 2019-01, Vol.66 (1), p.364-371

2019

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Combined TiN- and TaN temperature compensated thin film resistors

Thin solid films, 2012, Vol.520 (6), p.2162-2165

2012

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Ultralow-Power Cryogenic InP HEMT With Minimum Noise Temperature of 1 K at 6 GHz

IEEE electron device letters, 2012-05, Vol.33 (5), p.664-666

2012

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Low resistive Au-free, Ta-based, recessed ohmic contacts to InAlN AlN GaN heterostructures

Semiconductor science and technology, 2015-09, Vol.30 (10), p.105034

2015

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Advanced III-Nitride Technology for mm-Wave Applications

Malmros, Anna

2019

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Enhanced Mobility in InAlN/AlN/GaN HEMTs Using a GaN Interlayer

IEEE transactions on electron devices, 2019-07, Vol.66 (7), p.2910-2915

2019

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A versatile low-resistance ohmic contact process with ohmic recess and low-temperature annealing for GaN HEMTs

Semiconductor science and technology, 2018-09, Vol.33 (9), p.95019

2018

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Suppression of Dispersive Effects in AlGaN/GaN High-Electron-Mobility Transistors Using Bilayer SiN x Grown by Low Pressure Chemical Vapor Deposition

IEEE electron device letters, 2015-06, Vol.36 (6), p.537-539

2015

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A versatile low low-resistance ohmic contact process with ohmic recess and low low-temperature annealing for GaN HEMTs

Semiconductor science and technology, 2018, Vol.33

2018

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Effects of Surface Passivation and Deposition Methods on the 1/ f Noise Performance of AlInN/AlN/GaN High Electron Mobility Transistors

IEEE electron device letters, 2015-04, Vol.36 (4), p.315-317

2015

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TiN thin film resistors for monolithic microwave integrated circuits

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2010-09, Vol.28 (5), p.912-915

2010

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Evaluation of an InAlN/AlN/GaN HEMT with Ta-based ohmic contacts and PECVD SiN passivation

Physica status solidi. C, 2014-02, Vol.11 (3-4), p.924-927

2014

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Cryogenic 0.5-13 GHz low noise amplifier with 3 K mid-band noise temperature

2012 IEEE/MTT-S International Microwave Symposium Digest, 2012, p.1-3

2012

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(Invited) A Revolutionary GaN-on-SiC Heteroepitaxy for High-Frequency Power Transistors

Meeting abstracts (Electrochemical Society), 2018-07, Vol.MA2018-02 (38), p.1285-1285

2018

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Low-Pressure-Chemical-Vapor-Deposition SiNx passivated AlGaN/GaN HEMTs for power amplifier application

2015 Asia-Pacific Microwave Conference (APMC), 2015, Vol.3, p.1-3

2015

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InGaAs-InAlAs-InP HEMT technology for ultra-high frequency and ultra-low noise performance

International Conference on Indium Phosphide and Related Materials, 2005, 2005, p.124-128

2005

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A comparison of cryogenically cooled pseudomorphic and lattice matched InP HEMTs: Implementation in an ultra-low noise amplifier

2006 Asia-Pacific Microwave Conference, 2006, p.177-180

2006

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New Sound from Women

Scandinavian review, 1977-09, Vol.65 (3), p.20

Malmros, Anna-Lise

1977

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Male sex is strongly associated with IgE‐sensitization to airborne but not food allergens: results up to age 24 years from the BAMSE birth cohort

Clinical and translational allergy, 2020-05, Vol.10 (1), p.15-n/a, Article 15

2020

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Antibodies against Phosphorylcholine and Malondialdehyde during the First Two Years of Life

The Journal of immunology (1950), 2020-10, Vol.205 (8), p.2109-2116

2020

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Comparison of pasteurization and integrated thermophilic sanitation at a full-scale biogas plant – Heat demand and biogas production

Energy (Oxford), 2015-01, Vol.79, p.419-427

2015

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Microwave Performance of 'Buffer-Free' GaN-on-SiC High Electron Mobility Transistors

Suppression of Dispersive Effects in AlGaN/GaN High-Electron-Mobility Transistors Using Bilayer SiNx Grown by Low Pressure Chemical Vapor Deposition

Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs

Electrical properties, microstructure, and thermal stability of Ta-based ohmic contacts annealed at low temperature for GaN HEMTs

Impact of Channel Thickness on the Large-Signal Performance in InAlGaN/AlN/GaN HEMTs With an AlGaN Back Barrier

Combined TiN- and TaN temperature compensated thin film resistors

Ultralow-Power Cryogenic InP HEMT With Minimum Noise Temperature of 1 K at 6 GHz

Low resistive Au-free, Ta-based, recessed ohmic contacts to InAlN AlN GaN heterostructures

Advanced III-Nitride Technology for mm-Wave Applications

Enhanced Mobility in InAlN/AlN/GaN HEMTs Using a GaN Interlayer

A versatile low-resistance ohmic contact process with ohmic recess and low-temperature annealing for GaN HEMTs

Suppression of Dispersive Effects in AlGaN/GaN High-Electron-Mobility Transistors Using Bilayer SiN x Grown by Low Pressure Chemical Vapor Deposition

A versatile low low-resistance ohmic contact process with ohmic recess and low low-temperature annealing for GaN HEMTs

Effects of Surface Passivation and Deposition Methods on the 1/ f Noise Performance of AlInN/AlN/GaN High Electron Mobility Transistors

TiN thin film resistors for monolithic microwave integrated circuits

Evaluation of an InAlN/AlN/GaN HEMT with Ta-based ohmic contacts and PECVD SiN passivation

Cryogenic 0.5-13 GHz low noise amplifier with 3 K mid-band noise temperature

(Invited) A Revolutionary GaN-on-SiC Heteroepitaxy for High-Frequency Power Transistors

Low-Pressure-Chemical-Vapor-Deposition SiNx passivated AlGaN/GaN HEMTs for power amplifier application

InGaAs-InAlAs-InP HEMT technology for ultra-high frequency and ultra-low noise performance

A comparison of cryogenically cooled pseudomorphic and lattice matched InP HEMTs: Implementation in an ultra-low noise amplifier

New Sound from Women

Male sex is strongly associated with IgE‐sensitization to airborne but not food allergens: results up to age 24 years from the BAMSE birth cohort

Antibodies against Phosphorylcholine and Malondialdehyde during the First Two Years of Life

Comparison of pasteurization and integrated thermophilic sanitation at a full-scale biogas plant – Heat demand and biogas production

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