UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Electrical Characterization and Small-Signal Modeling of InAs/AlSb HEMTs for Low-Noise and High-Frequency Applications

IEEE transactions on microwave theory and techniques, 2008-12, Vol.56 (12), p.2685-2691

2008

Volltextzugriff (PDF)

Gate-Recess Technology for InAs/AlSb HEMTs

IEEE transactions on electron devices, 2009, Vol.56 (9), p.1904-1911

2009

Volltextzugriff (PDF)

Electron capture cross sections of InAs∕GaAs quantum dots

Applied physics letters, 2004-10, Vol.85 (14), p.2908-2910

2004

Volltextzugriff (PDF)

Epitaxial Optimization of 130-nm Gate-Length InGaAs/InAlAs/InP HEMTs for Low-Noise Applications

IEEE transactions on electron devices, 2009-01, Vol.56 (1), p.126-131

2009

Volltextzugriff (PDF)

Thermal emission of electrons from selected s -shell configurations in InAs/GaAs quantum dots

Applied physics letters, 2003-10, Vol.83 (17), p.3578-3580

2003

Volltextzugriff (PDF)

Isolated-gate InAs/AlSb HEMTs: A Monte Carlo study

2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM), 2010, p.1-4

2010

Volltextzugriff (PDF)

Comparison of shallow-mesa InAs/AlSb HEMTs with and without early-protection for long-term stability against Al(Ga)Sb oxidation

Semiconductor science and technology, 2014-03, Vol.29 (3), p.35010

2014

Volltextzugriff (PDF)

A 50-nm gate length InP pseudomorphic HEMT implemented in an MMIC broadband feedback amplifier

16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004, 2004, p.386-388

2004

Volltextzugriff (PDF)

Effect of gate length in InAs/AlSb HEMTs biased for low power or high gain

Solid-state electronics, 2008-05, Vol.52 (5), p.775-781

2008

Volltextzugriff (PDF)

DC characteristics of InAs/AlSb HEMTs at cryogenic temperatures

2009 IEEE International Conference on Indium Phosphide & Related Materials, 2009, p.323-325

2009

Volltextzugriff (PDF)

(Cl2:Ar) ICP/RIE Dry Etching of Al(Ga)Sb FOR AlSb/InAs HEMTs

2007 IEEE 19th International Conference on Indium Phosphide & Related Materials, 2007, p.125-128

2007

Volltextzugriff (PDF)

Narrow band gap III-V based-FET for ultra low power high frequency analog applications

2009 67th Annual Device Research Conference (DRC), 2009, p.149-151

2009

Volltextzugriff (PDF)

Effect of Schottky layer thickness on DC, RE and noise of 70-nm gate length InP HEMTs

2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings, 2006, p.329-331

2006

Volltextzugriff (PDF)

AlSb/InAs HEMTs on InP substrate using wet and dry etching for mesa isolation

2008 20th International Conference on Indium Phosphide and Related Materials, 2008, p.1-3

2008

Volltextzugriff (PDF)

DC and RF Performance of 0.2-0.4 /spl mu/m Gate Length InAs/AlSb HEMTs

2007 IEEE 19th International Conference on Indium Phosphide & Related Materials, 2007, p.67-70

2007

Volltextzugriff (PDF)

InGaAs-InAlAs-InP HEMT technology for ultra-high frequency and ultra-low noise performance

International Conference on Indium Phosphide and Related Materials, 2005, 2005, p.124-128

2005

Volltextzugriff (PDF)

A W-band MMIC amplifier using 70-nm gate length InP HEMT technology

European Gallium Arsenide and Other Semiconductor Application Symposium, GAAS 2005, 2005, p.165-168

2005

Volltextzugriff (PDF)

Characterization of insulated-gate versus schottky-gate InAs/AlSb HEMTs

2007 European Microwave Integrated Circuit Conference, 2007, p.24-27

2007

Volltextzugriff (PDF)

Benchmarking of low band gap III-V based-HEMTs and sub-100nm CMOS under low drain voltage regime

2007 European Microwave Integrated Circuit Conference, 2007, p.20-23

2007

Volltextzugriff (PDF)

Exploration of the hypothalamic–pituitary–adrenal function as a tool to evaluate animal welfare

Physiology & behavior, 2007-10, Vol.92 (3), p.317-339

2007

Volltextzugriff (PDF)

Early kit mortality and growth in farmed mink are affected by litter size rather than nest climate

Animal (Cambridge, England), 2017-09, Vol.11 (9), p.1581-1589

2017

Volltextzugriff (PDF)

Anaesthetic conserving device AnaConDa®: dead space effect and significance for lung protective ventilation

British journal of anaesthesia : BJA, 2014-09, Vol.113 (3), p.508-514

2014

Volltextzugriff (PDF)

High environmental temperature around farrowing induced heat stress in crated sows

Journal of animal science, 2016-01, Vol.94 (1), p.377-384

2016

Volltextzugriff (PDF)

The ability of different thermal aids to reduce hypothermia in neonatal piglets

Journal of animal science, 2016-05, Vol.94 (5), p.2151

2016

Volltextzugriff (PDF)

Carbon dioxide rebreathing with the anaesthetic conserving device, AnaConDa

British journal of anaesthesia : BJA, 2012-08, Vol.109 (2), p.279-283

2012

Volltextzugriff (PDF)

1 – 25 von 48

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(36)
Mit Volltextzugriff
(41)

Publikationsform

Artikel
(35)
Tagungsberichte
(13)

Sprache

Englisch
(48)
Japanisch
(3)

Erscheinungsjahr

n.n

Thema

Science & Technology
(34)
Life Sciences & Biomedicine
(22)
Hemts
(14)
Female
(12)
Modfets
(10)
Physical Sciences
(10)
Technology
(10)
Animals
(9)
Behavioral Sciences
(9)
Indium Phosphide
(9)
Physics
(9)
Agriculture
(8)
Agriculture, Dairy & Animal Science
(8)
Biological And Medical Sciences
(8)
Engineering
(8)
Engineering, Electrical & Electronic
(8)
Mink
(8)
Physics, Applied
(8)
Veterinary Sciences
(8)
Cortisol
(6)

15 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

Electrical Characterization and Small-Signal Modeling of InAs/AlSb HEMTs for Low-Noise and High-Frequency Applications

Gate-Recess Technology for InAs/AlSb HEMTs

Electron capture cross sections of InAs∕GaAs quantum dots

Epitaxial Optimization of 130-nm Gate-Length InGaAs/InAlAs/InP HEMTs for Low-Noise Applications

Thermal emission of electrons from selected s -shell configurations in InAs/GaAs quantum dots

Isolated-gate InAs/AlSb HEMTs: A Monte Carlo study

Comparison of shallow-mesa InAs/AlSb HEMTs with and without early-protection for long-term stability against Al(Ga)Sb oxidation

A 50-nm gate length InP pseudomorphic HEMT implemented in an MMIC broadband feedback amplifier

Effect of gate length in InAs/AlSb HEMTs biased for low power or high gain

DC characteristics of InAs/AlSb HEMTs at cryogenic temperatures

(Cl2:Ar) ICP/RIE Dry Etching of Al(Ga)Sb FOR AlSb/InAs HEMTs

Narrow band gap III-V based-FET for ultra low power high frequency analog applications

Effect of Schottky layer thickness on DC, RE and noise of 70-nm gate length InP HEMTs

AlSb/InAs HEMTs on InP substrate using wet and dry etching for mesa isolation

DC and RF Performance of 0.2-0.4 /spl mu/m Gate Length InAs/AlSb HEMTs

InGaAs-InAlAs-InP HEMT technology for ultra-high frequency and ultra-low noise performance

A W-band MMIC amplifier using 70-nm gate length InP HEMT technology

Characterization of insulated-gate versus schottky-gate InAs/AlSb HEMTs

Benchmarking of low band gap III-V based-HEMTs and sub-100nm CMOS under low drain voltage regime

Exploration of the hypothalamic–pituitary–adrenal function as a tool to evaluate animal welfare

Early kit mortality and growth in farmed mink are affected by litter size rather than nest climate

Anaesthetic conserving device AnaConDa®: dead space effect and significance for lung protective ventilation

High environmental temperature around farrowing induced heat stress in crated sows

The ability of different thermal aids to reduce hypothermia in neonatal piglets

Carbon dioxide rebreathing with the anaesthetic conserving device, AnaConDa

Suchergebnisse filtern