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Phase Separation in Single InxGa1-xN Nanowires Revealed through a Hard X-ray Synchrotron Nanoprobe

Nano letters, 2014-03, Vol.14 (3), p.1300-1305

2014

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Ga-polar GaN nanocolumn arrays with semipolar faceted tips

New journal of physics, 2013-05, Vol.15 (5), p.53045-15

2013

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Optical Emission of Individual GaN Nanocolumns Analyzed with High Spatial Resolution

Nano letters, 2015-08, Vol.15 (8), p.5105-5109

2015

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Structure and Elemental Distribution of (Ga,Mn)N Nanowires

Nano letters, 2011-02, Vol.11 (2), p.398-401

2011

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Polarity dependent strongly inhomogeneous In-incorporation in GaN nanocolumns

Nanotechnology, 2016-09, Vol.27 (35), p.355703-355703

2016

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Corrigendum: Ga-polar GaN nanocolumn arrays with semipolar faceted tips (2013 New J. Phys. 15 053045)

New journal of physics, 2014-01, Vol.16 (1), p.19501

2014

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Synchrotron nanoimaging of single In-rich InGaN nanowires

Journal of applied physics, 2013-04, Vol.113 (13)

2013

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Spontaneous core-shell elemental distribution in In-rich InxGa1−xN nanowires grown by molecular beam epitaxy

Nanotechnology, 2014-02, Vol.25 (7)

2014

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Surface and interface electronic properties of AlGaN(0001) epitaxial layers

Applied physics. A, Materials science & processing, 2007-06, Vol.87 (3), p.505-509

2007

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Gd-doped GaN studied with element specificity: Very small polarization of Ga, paramagnetism of Gd and the formation of magnetic clusters

Journal of magnetism and magnetic materials, 2010-05, Vol.322 (9), p.1162-1166

2010

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X-ray absorption in GaGdN: A study of local structure

Applied physics letters, 2008-07, Vol.93 (2), p.021916-021916-3

2008

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MBE growth of high electron mobility 2DEGs in AlGaN/GaN heterostructures controlled by RHEED

AIP advances, 2012-03, Vol.2 (1), p.012108-012108-5

2012

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Radial composition of single InGaN nanowires: a combined study by EDX, Raman spectroscopy, and X-ray diffraction

Physica status solidi. PSS-RRL. Rapid research letters, 2013-10, Vol.7 (10), p.864-867

2013

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Mn incorporation in GaN thin layers grown by molecular-beam epitaxy

Semiconductor science and technology, 2006-09, Vol.21 (9), p.1348-1353

2006

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Direct observation of elemental segregation in InGaN nanowires by X-ray nanoprobe

Physica status solidi. PSS-RRL. Rapid research letters, 2011-03, Vol.5 (3), p.95-97

2011

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Substitutional-to-interstitial ratio of manganese in nanostructured GaN by electron channeling enhanced microanalysis

Journal of applied physics, 2008-04, Vol.103 (7), p.073520-073520-4

2008

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A vertical resonant tunneling transistor for application in digital logic circuits

IEEE transactions on electron devices, 2001-06, Vol.48 (6), p.1028-1032

2001

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Electron stabilized ferromagnetism in GaGdN

Physica status solidi. C, 2008-05, Vol.5 (6), p.2352-2354

2008

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Inhomogeneous electron distribution in InN nanowires: Influence on the optical properties

Physica status solidi. C, 2012-03, Vol.9 (3-4), p.1001-1004

2012

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Erratum: Optical properties of nitride nanostructures

Annalen der Physik, 2011-11, Vol.523 (11), p.957-957

2011

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Physical properties and applications of InxGa1−xN nanowires

AIP Conference Proceedings, 2014, Vol.1598 (1), p.113

2014

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Optical properties of nitride nanostructures

Annalen der Physik, 2011-01, Vol.523 (1-2), p.51-61

2011

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Demonstration of a current-controlled three-terminal Nb–InxGa1−xAs/InP Josephson contact

Applied physics letters, 1998-10, Vol.73 (16), p.2348-2350

1998

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Optical studies of MBE-grown InN nanocolumns: Evidence of surface electron accumulation

Physical review. B, Condensed matter and materials physics, 2009-03, Vol.79 (11), Article 115305

2009

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Variable range hopping transport in ferromagnetic GaGdN epitaxial layers

Physical review. B, Condensed matter and materials physics, 2009-11, Vol.80 (19), Article 195208

2009

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Phase Separation in Single InxGa1-xN Nanowires Revealed through a Hard X-ray Synchrotron Nanoprobe

Ga-polar GaN nanocolumn arrays with semipolar faceted tips

Optical Emission of Individual GaN Nanocolumns Analyzed with High Spatial Resolution

Structure and Elemental Distribution of (Ga,Mn)N Nanowires

Polarity dependent strongly inhomogeneous In-incorporation in GaN nanocolumns

Corrigendum: Ga-polar GaN nanocolumn arrays with semipolar faceted tips (2013 New J. Phys. 15 053045)

Synchrotron nanoimaging of single In-rich InGaN nanowires

Spontaneous core-shell elemental distribution in In-rich InxGa1−xN nanowires grown by molecular beam epitaxy

Surface and interface electronic properties of AlGaN(0001) epitaxial layers

Gd-doped GaN studied with element specificity: Very small polarization of Ga, paramagnetism of Gd and the formation of magnetic clusters

X-ray absorption in GaGdN: A study of local structure

MBE growth of high electron mobility 2DEGs in AlGaN/GaN heterostructures controlled by RHEED

Radial composition of single InGaN nanowires: a combined study by EDX, Raman spectroscopy, and X-ray diffraction

Mn incorporation in GaN thin layers grown by molecular-beam epitaxy

Direct observation of elemental segregation in InGaN nanowires by X-ray nanoprobe

Substitutional-to-interstitial ratio of manganese in nanostructured GaN by electron channeling enhanced microanalysis

A vertical resonant tunneling transistor for application in digital logic circuits

Electron stabilized ferromagnetism in GaGdN

Inhomogeneous electron distribution in InN nanowires: Influence on the optical properties

Erratum: Optical properties of nitride nanostructures

Physical properties and applications of InxGa1−xN nanowires

Optical properties of nitride nanostructures

Demonstration of a current-controlled three-terminal Nb–InxGa1−xAs/InP Josephson contact

Optical studies of MBE-grown InN nanocolumns: Evidence of surface electron accumulation

Variable range hopping transport in ferromagnetic GaGdN epitaxial layers

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