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Luminescence properties of heavily doped AlxGa1-xN/AlN films grown on sapphire substrate

Journal of luminescence, 2018-11, Vol.203, p.127-134

2018

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Droplet epitaxy of 3D zinc-blende GaN islands on a 2D van der Waals SiN structure

Applied surface science, 2024-05, Vol.655, p.159595, Article 159595

2024

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Transformation of the elemental composition on the GaN surface during a 2D-3D transition

Applied surface science, 2022-03, Vol.577, p.151802, Article 151802

2022

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Stimulated emission in heavily doped Al0.68Ga0.32N:Si structures with external cavity

Journal of luminescence, 2022-12, Vol.252, p.119392, Article 119392

2022

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Peculiarities of the AlN crystalline phase formation in a result of the electron-stimulated reconstruction transition (√31×√31)R ± 9° − (1 × 1)

Applied surface science, 2021-03, Vol.541, p.148548, Article 148548

2021

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Mg3N2 nanocrystallites formation during the GaN:Mg layers growth by the NH3-MBE technique

Journal of crystal growth, 2021-01, Vol.554, p.125963, Article 125963

2021

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PHOTOLUMINESCENCE OF MULTIPLE GAN/ALN QUANTUM WELLS

Avtometrija (Novosibirsk), 2021, Vol.57 (5), p.93-98

2021

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Optical gain and stimulated emission in optically pumped heavily doped Al0.74Ga0.26N:Si structures with external cavity

Optical materials, 2020-07, Vol.105, p.109879, Article 109879

2020

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Chemical kinetics and thermodynamics of the AlN crystalline phase formation on sapphire substrate in ammonia MBE

Journal of thermal analysis and calorimetry, 2018-08, Vol.133 (2), p.1099-1107

2018

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Change in the Character of Biaxial Stresses with an Increase in x from 0 to 0.7 in [Al.sub.x][Ga.sub.1-x]N:Si Layers Obtained by Ammonia Molecular Beam Epitaxy

Semiconductors (Woodbury, N.Y.), 2018-02, Vol.52 (2), p.221

2018

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Nitridation of an unreconstructed and reconstructed sapphire surface in an ammonia flow

Semiconductors (Woodbury, N.Y.), 2015-07, p.905

2015

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TEM study of defects in Al x Ga 1− x N layers with different polarity

Journal of crystal growth, 2012, Vol.338 (1), p.30-34

2012

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Effect of the Sapphire-Nitridation Level and Nucleation-Layer Enrichment with Aluminum on the Structural Properties of AlN Layers

Semiconductors (Woodbury, N.Y.), 2018-06, Vol.52 (6), p.789-796

2018

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Nitridation effect on sapphire surface polaritons

Surface & coatings technology, 2013-07, Vol.227, p.58-61

2013

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Amplified luminescence of heavily doped AlxGa1 - xN structures under optical pumping

Quantum electronics (Woodbury, N.Y.), 2018-03, Vol.48 (3), p.215-221

2018

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Increase in the diffusion length of minority carriers in [Al.sub.x][Ga.sub.1-x]N alloys fabricated by ammonia molecular beam epitaxy

Semiconductors (Woodbury, N.Y.), 2015-10, p.1285

2015

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Electron scattering in AlGaN/GaN heterostructures with a two-dimensional electron gas

Semiconductors (Woodbury, N.Y.), 2013, Vol.47 (1), p.33-44

2013

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TEM study of defects in AlxGa1−xN layers with different polarity

Journal of crystal growth, 2012-01, Vol.338 (1), p.30-34

2012

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Decrease in the binding energy of donors in heavily doped GaN:Si layers

Semiconductors (Woodbury, N.Y.), 2014-09, Vol.48 (9), p.1134-1138

2014

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AlN/GaN heterostructures for normally-off transistors

Semiconductors (Woodbury, N.Y.), 2017-03, Vol.51 (3), p.379-386

2017

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Chromium mask for plasma-chemical etching of [Al.sub.x][Ga.sub.1 - x]N layers

Technical physics, 2014-09, Vol.59 (9), p.1356

2014

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MBE-grown AlGaN/GaN heterostructures for UV photodetectors

Technical physics, 2015-04, Vol.60 (4), p.546-552

2015

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The optimal conditions of obtaining AlN-layers on sapphire with MBE method

2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices, 2009, p.43-43

2009

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Emergency Airway Management in Patients with COVID-19: A Prospective International Multicenter Cohort Study

Anesthesiology (Philadelphia), 2021-08, Vol.135 (2), p.292-303

2021

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Cis-bis(dimethylsulfoxide)tetraamminecobalt(III) and related complex ions[1]

Journal of inorganic & nuclear chemistry, 1979, Vol.41 (1), p.117-119

1979

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Luminescence properties of heavily doped AlxGa1-xN/AlN films grown on sapphire substrate

Droplet epitaxy of 3D zinc-blende GaN islands on a 2D van der Waals SiN structure

Transformation of the elemental composition on the GaN surface during a 2D-3D transition

Stimulated emission in heavily doped Al0.68Ga0.32N:Si structures with external cavity

Peculiarities of the AlN crystalline phase formation in a result of the electron-stimulated reconstruction transition (√31×√31)R ± 9° − (1 × 1)

Mg3N2 nanocrystallites formation during the GaN:Mg layers growth by the NH3-MBE technique

PHOTOLUMINESCENCE OF MULTIPLE GAN/ALN QUANTUM WELLS

Optical gain and stimulated emission in optically pumped heavily doped Al0.74Ga0.26N:Si structures with external cavity

Chemical kinetics and thermodynamics of the AlN crystalline phase formation on sapphire substrate in ammonia MBE

Change in the Character of Biaxial Stresses with an Increase in x from 0 to 0.7 in [Al.sub.x][Ga.sub.1-x]N:Si Layers Obtained by Ammonia Molecular Beam Epitaxy

Nitridation of an unreconstructed and reconstructed sapphire surface in an ammonia flow

TEM study of defects in Al x Ga 1− x N layers with different polarity

Effect of the Sapphire-Nitridation Level and Nucleation-Layer Enrichment with Aluminum on the Structural Properties of AlN Layers

Nitridation effect on sapphire surface polaritons

Amplified luminescence of heavily doped AlxGa1 - xN structures under optical pumping

Increase in the diffusion length of minority carriers in [Al.sub.x][Ga.sub.1-x]N alloys fabricated by ammonia molecular beam epitaxy

Electron scattering in AlGaN/GaN heterostructures with a two-dimensional electron gas

TEM study of defects in AlxGa1−xN layers with different polarity

Decrease in the binding energy of donors in heavily doped GaN:Si layers

AlN/GaN heterostructures for normally-off transistors

Chromium mask for plasma-chemical etching of [Al.sub.x][Ga.sub.1 - x]N layers

MBE-grown AlGaN/GaN heterostructures for UV photodetectors

The optimal conditions of obtaining AlN-layers on sapphire with MBE method

Emergency Airway Management in Patients with COVID-19: A Prospective International Multicenter Cohort Study

Cis-bis(dimethylsulfoxide)tetraamminecobalt(III) and related complex ions[1]

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