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GaN Quantum-Dot Formation by a Temperature Increase in an Ammonia Flow

Semiconductors (Woodbury, N.Y.), 2022-06, Vol.56 (6), p.340-345

2022

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Transformation of N-Polar Inversion Domains from AlN Buffer Layers during the Growth of AlGaN Layers

Semiconductors (Woodbury, N.Y.), 2022-06, Vol.56 (6), p.352-359

2022

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Chemical kinetics and thermodynamics of the AlN crystalline phase formation on sapphire substrate in ammonia MBE

Journal of thermal analysis and calorimetry, 2018-08, Vol.133 (2), p.1099-1107

2018

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Luminescence and superradiance in electron-beam-excited AlxGa1−xN

Journal of applied physics, 2014-09, Vol.116 (11)

2014

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Nature of intensive defect-related broadband luminescence of heavily doped AlxGa1-xN:Si layers

Journal of physics. Conference series, 2017, Vol.816 (1)

2017

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Modification of the surface energy and morphology of GaN monolayers on the AlN surface in an ammonia flow

Applied physics letters, 2022-01, Vol.120 (5)

2022

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Characterization of MBE-grown AlGaN layers heavily doped using silane

Physica status solidi. C, 2013-03, Vol.10 (3), p.315-318

2013

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Mechanisms of Optical Gain in Heavily Doped AlxGa1 –xN:Si Structures (x = 0.56–1)

Semiconductors (Woodbury, N.Y.), 2024-05, Vol.58 (5), p.386-392

2024

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Analysis of the AlN phase transition on a sapphire surface within a universal 2D lattice gas model in MBE

Journal of physics. Conference series, 2021-03, Vol.1851 (1), p.12005

2021

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Determination of the energy structure of recombination centers in heavily doped AlxGa1-xN:Si epitaxial layers with x > 0.5

Journal of physics. Conference series, 2018, Vol.993 (1)

2018

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Features of Optical Gain in Heavily Doped AlxGa1 –xN:Si-Structures

Technical physics letters, 2021-09, Vol.47 (9), p.692-695

2021

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Moving photoluminescence band in AlGaN GaN heterostructures

Semiconductor science and technology, 2015-08, Vol.30 (8), p.85010

2015

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Surface Polaritons in Silicon-Doped Aluminum and Gallium Nitride Films

Optics and spectroscopy, 2019-07, Vol.127 (1), p.36-39

2019

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Properties of intensive defect-related band in photoluminescence spectra of heavily doped AlxGa1-xN:Si layers

Journal of physics. Conference series, 2017, Vol.864 (1)

2017

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Forming the GaN Nanocrystals on the Graphene-Like g-AlN and g-Si3N3 Surface

Physics of the solid state, 2019-12, Vol.61 (12), p.2329-2334

2019

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Effect of the Sapphire-Nitridation Level and Nucleation-Layer Enrichment with Aluminum on the Structural Properties of AlN Layers

Semiconductors (Woodbury, N.Y.), 2018-06, Vol.52 (6), p.789-796

2018

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Formation of a Graphene-Like SiN Layer on the Surface Si(111)

Semiconductors (Woodbury, N.Y.), 2018-12, Vol.52 (12), p.1511-1517

2018

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Undoped High-Resistance GaN Buffer Layer for AlGaN/GaN High-Electron-Mobility Transistors

Technical physics letters, 2019-08, Vol.45 (8), p.761-764

2019

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Nitridation effect on sapphire surface polaritons

Surface & coatings technology, 2013-07, Vol.227, p.58-61

2013

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Original method of GaN and InGaN quantum dots formation on (0001)AlN surface by ammonia molecular beam epitaxy

Journal of physics. Conference series, 2017-06, Vol.864 (1), p.12007

2017

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Power dependence of unusual bands in photoluminescence spectra of AlGaN/GaN heterostructures

Physica status solidi. C, 2015-04, Vol.12 (4-5), p.372-375

2015

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Change in the Character of Biaxial Stresses with an Increase in x from 0 to 0.7 in Al x Ga1 – x N:Si Layers Obtained by Ammonia Molecular Beam Epitaxy

Semiconductors (Woodbury, N.Y.), 2018-02, Vol.52 (2), p.221-225

2018

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Structure of interfaces in GaN AlN and Ge Si multilayered heterosystems by XAFS spectroscopy

Journal of physics. Conference series, 2016-11, Vol.774 (1), p.12128

2016

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TEM study of defects in AlxGa1−xN layers with different polarity

Journal of crystal growth, 2012-01, Vol.338 (1), p.30-34

2012

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Radiation enhancement in doped AlGaN-structures upon optical pumping

Technical physics letters, 2017, Vol.43 (1), p.46-49

2017

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GaN Quantum-Dot Formation by a Temperature Increase in an Ammonia Flow

Transformation of N-Polar Inversion Domains from AlN Buffer Layers during the Growth of AlGaN Layers

Chemical kinetics and thermodynamics of the AlN crystalline phase formation on sapphire substrate in ammonia MBE

Luminescence and superradiance in electron-beam-excited AlxGa1−xN

Nature of intensive defect-related broadband luminescence of heavily doped AlxGa1-xN:Si layers

Modification of the surface energy and morphology of GaN monolayers on the AlN surface in an ammonia flow

Characterization of MBE-grown AlGaN layers heavily doped using silane

Mechanisms of Optical Gain in Heavily Doped AlxGa1 –xN:Si Structures (x = 0.56–1)

Analysis of the AlN phase transition on a sapphire surface within a universal 2D lattice gas model in MBE

Determination of the energy structure of recombination centers in heavily doped AlxGa1-xN:Si epitaxial layers with x > 0.5

Features of Optical Gain in Heavily Doped AlxGa1 –xN:Si-Structures

Moving photoluminescence band in AlGaN GaN heterostructures

Surface Polaritons in Silicon-Doped Aluminum and Gallium Nitride Films

Properties of intensive defect-related band in photoluminescence spectra of heavily doped AlxGa1-xN:Si layers

Forming the GaN Nanocrystals on the Graphene-Like g-AlN and g-Si3N3 Surface

Effect of the Sapphire-Nitridation Level and Nucleation-Layer Enrichment with Aluminum on the Structural Properties of AlN Layers

Formation of a Graphene-Like SiN Layer on the Surface Si(111)

Undoped High-Resistance GaN Buffer Layer for AlGaN/GaN High-Electron-Mobility Transistors

Nitridation effect on sapphire surface polaritons

Original method of GaN and InGaN quantum dots formation on (0001)AlN surface by ammonia molecular beam epitaxy

Power dependence of unusual bands in photoluminescence spectra of AlGaN/GaN heterostructures

Change in the Character of Biaxial Stresses with an Increase in x from 0 to 0.7 in Al x Ga1 – x N:Si Layers Obtained by Ammonia Molecular Beam Epitaxy

Structure of interfaces in GaN AlN and Ge Si multilayered heterosystems by XAFS spectroscopy

TEM study of defects in AlxGa1−xN layers with different polarity

Radiation enhancement in doped AlGaN-structures upon optical pumping

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