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Technologies for detecting falsified and substandard drugs in low and middle-income countries

PloS one, 2014-03, Vol.9 (3), p.e90601-e90601

2014

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Host-Directed Therapeutics for Tuberculosis: Can We Harness the Host?

Microbiology and Molecular Biology Reviews, 2013-12, Vol.77 (4), p.608-627

2013

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Deconstructing the differences: a comparison of GBD 2010 and CHERG's approach to estimating the mortality burden of diarrhea, pneumonia, and their etiologies

BMC infectious diseases, 2015-01, Vol.15 (1), p.16-16, Article 16

2015

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Genetic variation in CXCL12 and risk of cervical carcinoma: a population-based case-control study

International journal of immunogenetics, 2009-12, Vol.36 (6), p.367-375

2009

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Rare HLA drive additional HIV evolution compared to more frequent alleles

AIDS research and human retroviruses, 2009-03, Vol.25 (3), p.297

2009

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Interference-free determination of the absorption coefficient of amorphous silicon thin films

Japanese Journal of Applied Physics, 1992-03, Vol.31 (3), p.768-769

MALEY, N

1992

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Critical investigation of the infrared-transmission-data analysis of hydrogenated amorphous silicon alloys

Physical review. B, Condensed matter, 1992-07, Vol.46 (4), p.2078-2085

MALEY, N

1992

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Hydrogenated amorphous silicon films deposited by reactive sputtering: The electronic properties, hydrogen bonding and microstructure

Thin solid films, 1989-04, Vol.171 (1), p.217-233

1989

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Subsurface hydrogenated amorphous silicon to μ c -hydrogenated silicon transformation during magnetron sputter deposition determined by spectroscopic ellipsometry

Applied physics letters, 1994-10, Vol.65 (14), p.1769-1771

1994

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Effect of midgap states in intrinsic hydrogenated amorphous silicon on sub-band-gap photoconductivity

Applied physics letters, 1991-09, Vol.59 (13), p.1578-1580

1991

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The improved stability of hydrogenated amorphous silicon films grown by reactive magnetron sputtering at high substrate temperature

Journal of applied physics, 1994-04, Vol.75 (7), p.3704-3706

1994

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Hydrogen incorporation in the early stages of hydrogenated amorphous silicon deposition evaluated by real time infrared reflectance spectroscopy

Applied physics letters, 1993-07, Vol.63 (4), p.461-463

1993

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Silicon epitaxy at 230 °C by reactive dc magnetron sputtering and its in situ ellipsometry monitoring

Applied physics letters, 1991-07, Vol.59 (3), p.330-332

1991

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Systematic Errors in the Analysis of the Infrared Transmission Data Of Hydrogenated Amorphous Silicon

MRS proceedings, 1990, Vol.192, Article 663

1990

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Infrared absorption strength and hydrogen content of hydrogenated amorphous silicon

Physical review. B, Condensed matter, 1992-06, Vol.45 (23), p.13367-13377

1992

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Raman scattering and short range order in amorphous germanium

Solid state communications, 1985-03, Vol.53 (11), p.939-942

1985

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Dynamical structure factor of amorphous germanium

Physical review letters, 1986-04, Vol.56 (16), p.1720-1722

1986

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Real time infrared reflectance spectroscopy: A study of hydrogen incorporation and release during a-Si:H growth by reactive magnetron sputtering

Journal of non-crystalline solids, 1993-12, Vol.164, p.111-114

1993

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High Substrate Temperature a-Si:H Grown by DC Reactive Magnetron Sputtering

MRS proceedings, 1993, Vol.297, Article 145

1993

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Dynamics of tetrahedral networks: amorphous Si and Ge

Physical review. B, Condensed matter, 1988-11, Vol.38 (15), p.10611-10622

1988

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The Relation Between Microstructure and Electronic Properties of Magnetron Sputtered a-Si1−x,Cx:H

MRS proceedings, 1993, Vol.297

1993

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Technologies for Detecting Falsified and Substandard Drugs in Low and Middle-Income Countries: e90601

PloS one, 2014-03, Vol.9 (3)

2014

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Stability of large-area amorphous silicon alloy tandem solar modules

Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996, 1996, p.1137-1140

1996

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IEEE_Xplore

Hydrogenation induced changes in band states in a-Si:H

Journal of non-crystalline solids, 1991, Vol.137, p.331-334

1991

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Ellipsometry Studies of (μc-Si:H/ZnO) and (μc-Si:H/a-Si:H) Interfaces in Magnetron Sputtering System

MRS proceedings, 1993, Vol.297, Article 25

1993

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Technologies for detecting falsified and substandard drugs in low and middle-income countries

Host-Directed Therapeutics for Tuberculosis: Can We Harness the Host?

Deconstructing the differences: a comparison of GBD 2010 and CHERG's approach to estimating the mortality burden of diarrhea, pneumonia, and their etiologies

Genetic variation in CXCL12 and risk of cervical carcinoma: a population-based case-control study

Rare HLA drive additional HIV evolution compared to more frequent alleles

Interference-free determination of the absorption coefficient of amorphous silicon thin films

Critical investigation of the infrared-transmission-data analysis of hydrogenated amorphous silicon alloys

Hydrogenated amorphous silicon films deposited by reactive sputtering: The electronic properties, hydrogen bonding and microstructure

Subsurface hydrogenated amorphous silicon to μ c -hydrogenated silicon transformation during magnetron sputter deposition determined by spectroscopic ellipsometry

Effect of midgap states in intrinsic hydrogenated amorphous silicon on sub-band-gap photoconductivity

The improved stability of hydrogenated amorphous silicon films grown by reactive magnetron sputtering at high substrate temperature

Hydrogen incorporation in the early stages of hydrogenated amorphous silicon deposition evaluated by real time infrared reflectance spectroscopy

Silicon epitaxy at 230 °C by reactive dc magnetron sputtering and its in situ ellipsometry monitoring

Systematic Errors in the Analysis of the Infrared Transmission Data Of Hydrogenated Amorphous Silicon

Infrared absorption strength and hydrogen content of hydrogenated amorphous silicon

Raman scattering and short range order in amorphous germanium

Dynamical structure factor of amorphous germanium

Real time infrared reflectance spectroscopy: A study of hydrogen incorporation and release during a-Si:H growth by reactive magnetron sputtering

High Substrate Temperature a-Si:H Grown by DC Reactive Magnetron Sputtering

Dynamics of tetrahedral networks: amorphous Si and Ge

The Relation Between Microstructure and Electronic Properties of Magnetron Sputtered a-Si1−x,Cx:H

Technologies for Detecting Falsified and Substandard Drugs in Low and Middle-Income Countries: e90601

Stability of large-area amorphous silicon alloy tandem solar modules

Hydrogenation induced changes in band states in a-Si:H

Ellipsometry Studies of (μc-Si:H/ZnO) and (μc-Si:H/a-Si:H) Interfaces in Magnetron Sputtering System

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